A method of forming a film is performed in a heat treatment apparatus that includes a processing container, a tubular member provided in the processing container, a heater configured to heat an inside of the processing container, and a gas supply. The method includes: providing a substrate in the tubular member; adjusting a temperature inside the tubular member by the heater; and after adjusting the temperature, supplying a gas containing a film-forming gas from the gas supply into the processing container to form a film on the substrate. In the adjusting the temperature, a gas containing a heat transfer gas is supplied from the gas supply into the processing container.

A method of forming a film is performed in a heat treatment apparatus that includes a processing container, a tubular member provided in the processing container, a heater configured to heat an inside of the processing container, and a gas supply. The method includes: providing a substrate in the tubular member; adjusting a temperature inside the tubular member by the heater; and after adjusting the temperature, supplying a gas containing a film-forming gas from the gas supply into the processing container to form a film on the substrate. In the adjusting the temperature, a gas containing a heat transfer gas is supplied from the gas supply into the processing container.

A concentration sensor assembly can include a vaporization chamber having a compound. The concentration sensor assembly may include a first flow path coupled to the vaporization chamber. The first flow path may direct a first gas to the vaporization chamber. A second flow path can direct a second gas out of the vaporization chamber. The second gas can include the compound and the first gas. A first sensor is disposed along the first flow path. The first sensor measures first data indicative of a first mass flow rate of the first gas. A second sensor is disposed along the second flow path. The second sensor measure second data indicative of a second mass flow rate of the second gas. A computing device may determine a concentration of the vaporizable substance within the second gas based on the first data and the second data.

A concentration sensor assembly can include a vaporization chamber having a compound. The concentration sensor assembly may include a first flow path coupled to the vaporization chamber. The first flow path may direct a first gas to the vaporization chamber. A second flow path can direct a second gas out of the vaporization chamber. The second gas can include the compound and the first gas. A first sensor is disposed along the first flow path. The first sensor measures first data indicative of a first mass flow rate of the first gas. A second sensor is disposed along the second flow path. The second sensor measure second data indicative of a second mass flow rate of the second gas. A computing device may determine a concentration of the vaporizable substance within the second gas based on the first data and the second data.

A chemical vapor deposition furnace for depositing silicon nitride films, is discloses. The furnace comprising a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector is provided inside the process chamber extending in a substantially vertical direction over substantially a wafer boat height and comprising a feed end connected to a source of a silicon precursor and a source of a nitrogen precursor and a plurality of vertically spaced gas injection holes to provide gas from the feed end to the process chamber. The furnace may comprise a purge gas injection system to provide a purge gas into the process chamber near a lower end of the process chamber.

A chemical vapor deposition furnace for depositing silicon nitride films, is discloses. The furnace comprising a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector is provided inside the process chamber extending in a substantially vertical direction over substantially a wafer boat height and comprising a feed end connected to a source of a silicon precursor and a source of a nitrogen precursor and a plurality of vertically spaced gas injection holes to provide gas from the feed end to the process chamber. The furnace may comprise a purge gas injection system to provide a purge gas into the process chamber near a lower end of the process chamber.

A semiconductor substrate processing apparatus is provided with a reaction chamber; a heater to heat the reaction chamber; and a substrate support assembly. The substrate support assembly comprising: a substrate support defining an outer support surface for supporting a substrate or substrate carrier in the reaction chamber; and a base assembly including a door for sealing the reaction chamber of the apparatus. The substrate support being connected to the base assembly through a bearing that facilitates rotation of the substrate support. The substrate support assembly is provided with a temperature sensor to measure the temperature of the bearing.

A semiconductor substrate processing apparatus is provided with a reaction chamber; a heater to heat the reaction chamber; and a substrate support assembly. The substrate support assembly comprising: a substrate support defining an outer support surface for supporting a substrate or substrate carrier in the reaction chamber; and a base assembly including a door for sealing the reaction chamber of the apparatus. The substrate support being connected to the base assembly through a bearing that facilitates rotation of the substrate support. The substrate support assembly is provided with a temperature sensor to measure the temperature of the bearing.

A method of forming a structure includes supporting a substrate within a reaction chamber of a semiconductor processing system, the substrate having a recess with a bottom surface and a sidewall surface extending upwards from the bottom surface of the recess. A film is deposited within the recess and onto the bottom surface and the sidewall surface of the recess, the film having a bottom segment overlaying the bottom surface of the recess and a sidewall segment deposited onto the sidewall surface of the recess. The sidewall segment of the film is removed while at least a portion bottom segment of the film is retained within the recess, the sidewall segment of the film removed from the sidewall surface more rapidly than removing the bottom segment of the film from the bottom surface of the recess. Semiconductor processing systems and structures formed using the method are also described.

A continuous-feed chemical vapor deposition system and an associated method are provided. An example of the continuous-feed chemical vapor deposition system includes a first chamber configured to receive a substrate. The continuous-feed chemical vapor deposition system includes a second chamber downstream from the first chamber and configured to receive the substrate from the first chamber. The second chamber is configured to perform a chemical vapor deposition process on the substrate. The continuous-feed chemical vapor deposition system includes a third chamber downstream from the second chamber that is configured to receive the substrate from the second chamber upon completion of the chemical vapor deposition process. The second chamber can be environmentally isolated from the first chamber and the third chamber. The first chamber is further configured to receive a subsequent substrate when the chemical vapor deposition process is occurring in the second chamber.