Provided are methods and systems for providing silicon-containing films. The composition of the silicon-containing film can be controlled by the choice of the combination of precursors and the ratio of flow rates between the precursors. The silicon-containing films can be deposited on a substrate by flowing two different organo-silicon precursors to mix together in a reaction chamber. The organo-silicon precursors react with one or more radicals in a substantially low energy state to form the silicon-containing film. The one or more radicals can be formed in a remote plasma source.

A semiconductor processing system processes semiconductor wafers in a process chamber. The process chamber includes semiconductor process equipment for performing semiconductor processes within the chamber. The process chamber includes a heat pipe integrated with one or more components of the process chamber. The heat pipe effectively transfers heat from within the chamber to an exterior of the chamber.

A semiconductor processing system processes semiconductor wafers in a process chamber. The process chamber includes semiconductor process equipment for performing semiconductor processes within the chamber. The process chamber includes a heat pipe integrated with one or more components of the process chamber. The heat pipe effectively transfers heat from within the chamber to an exterior of the chamber.

There is provided a plasma generating device that includes a first electrode connected to a high-frequency power supply, and a second electrode to be grounded, a buffer structure configured to form a buffer chamber that accommodates the first and second electrodes wherein the first electrode and the second electrode are alternately arranged such that a number of electrodes of the first electrode and the second electrode are in an odd number of three or more in total, and wherein the second electrode is used in common for two of the first electrode being respectively adjacent to the second electrode used in common, and wherein a gas supply port that supplies gas into a process chamber is installed on a wall surface of the buffer structure.

There is provided a plasma generating device that includes a first electrode connected to a high-frequency power supply, and a second electrode to be grounded, a buffer structure configured to form a buffer chamber that accommodates the first and second electrodes wherein the first electrode and the second electrode are alternately arranged such that a number of electrodes of the first electrode and the second electrode are in an odd number of three or more in total, and wherein the second electrode is used in common for two of the first electrode being respectively adjacent to the second electrode used in common, and wherein a gas supply port that supplies gas into a process chamber is installed on a wall surface of the buffer structure.

Systems and methods related to temperature zone control systems can include a reactant source cabinet that is configured to be at least partially evacuated, a vessel base that is configured to hold solid source chemical reactant therein, and a lid that is coupled to a distal portion of the vessel base. The lid may include one or more lid valves. The system may further include a plurality of gas panel valves that are configured to deliver gas from a gas source to the vessel. The system may include a heating element that is configured to heat the one or more lid valves. The system may include a heat shield, a first portion of which is disposed between the one or more lid valves and the vessel base. A second portion of the heat shield may be disposed between the first heating element and the plurality of gas panel valves.

A two-dimensional layer is deposited onto a substrate in a CVD reactor, in which a process gas is fed into a process chamber. The process gas in the process chamber is brought to the substrate, and the substrate is heated to a process temperature. After a chemical reaction of the process gas, the layer forms on the surface. During or after the heating of the substrate to the process temperature, the process gas with a first mass flow rate is initially fed into the process chamber and then, while the substrate surface is being observed, the mass flow rate of the process gas is increased to a rate at which the layer growth begins, and subsequently the mass flow rate of the process gas is increased by a predetermined value, during which the layer is deposited. The beginning of the layer growth is identified by observing measurements from a pyrometer.

A two-dimensional layer is deposited onto a substrate in a CVD reactor, in which a process gas is fed into a process chamber. The process gas in the process chamber is brought to the substrate, and the substrate is heated to a process temperature. After a chemical reaction of the process gas, the layer forms on the surface. During or after the heating of the substrate to the process temperature, the process gas with a first mass flow rate is initially fed into the process chamber and then, while the substrate surface is being observed, the mass flow rate of the process gas is increased to a rate at which the layer growth begins, and subsequently the mass flow rate of the process gas is increased by a predetermined value, during which the layer is deposited. The beginning of the layer growth is identified by observing measurements from a pyrometer.

Methods and apparatuses are provided herein for oxidizing an annular edge region of a substrate. A method may include providing the substrate to a substrate holder in a semiconductor processing chamber, the semiconductor processing chamber having a showerbead positioned above the substrate holder, and simultaneously flowing, while the substrate is supported by the substrate holder, (a) an oxidizing gas around a periphery of the substrate and (b) an inert gas that does not include oxygen through the showerhead and onto the substrate, thereby creating an annular gas region over an annular edge region of the substrate and an interior gas region over on an interior region of the substrate; the simultaneous flowing is not during a deposition of a material onto the substrate, and the annular gas region has an oxidization rate higher than the interior gas region.

Methods and apparatuses are provided herein for oxidizing an annular edge region of a substrate. A method may include providing the substrate to a substrate holder in a semiconductor processing chamber, the semiconductor processing chamber having a showerbead positioned above the substrate holder, and simultaneously flowing, while the substrate is supported by the substrate holder, (a) an oxidizing gas around a periphery of the substrate and (b) an inert gas that does not include oxygen through the showerhead and onto the substrate, thereby creating an annular gas region over an annular edge region of the substrate and an interior gas region over on an interior region of the substrate; the simultaneous flowing is not during a deposition of a material onto the substrate, and the annular gas region has an oxidization rate higher than the interior gas region.