A pressure adjusting valve includes a pipe, a valve body arranged inside the pipe, and a support shaft configured to rotatably support the valve body. The pressure adjusting valve is configured to adjust pressure by rotating the valve body. The valve body has, inside the valve body, a valve body side flow path through which a purge gas can flow, and has a plurality of outlets that communicate with the valve body side flow path at an outer periphery of the valve body. The support shaft has a support shaft side flow path for introducing the purge gas into the valve body side flow path.

A pressure adjusting valve includes a pipe, a valve body arranged inside the pipe, and a support shaft configured to rotatably support the valve body. The pressure adjusting valve is configured to adjust pressure by rotating the valve body. The valve body has, inside the valve body, a valve body side flow path through which a purge gas can flow, and has a plurality of outlets that communicate with the valve body side flow path at an outer periphery of the valve body. The support shaft has a support shaft side flow path for introducing the purge gas into the valve body side flow path.

A semiconductor manufacturing method using a semiconductor manufacturing apparatus 100 including a treating chamber 1, the method including: a first process of supplying a complexing gas into the treating chamber in which a wafer 2 having a surface having a transition metal-containing film formed thereon is placed, to adsorb an organic compound as a component of the complexing gas to the transition metal-containing film, the transition metal-containing film containing a transition metal element; and a second process of heating the wafer in which the organic compound is adsorbed to the transition metal-containing film, to react the organic compound with the transition metal element, thereby converting the organic compound into an organometallic complex, and desorbing the organometallic complex, wherein the organic compound has Lewis basicity, and is a multidentate ligand molecule capable of forming a bidentate or more coordination bond with the transition metal element.

A semiconductor manufacturing method using a semiconductor manufacturing apparatus 100 including a treating chamber 1, the method including: a first process of supplying a complexing gas into the treating chamber in which a wafer 2 having a surface having a transition metal-containing film formed thereon is placed, to adsorb an organic compound as a component of the complexing gas to the transition metal-containing film, the transition metal-containing film containing a transition metal element; and a second process of heating the wafer in which the organic compound is adsorbed to the transition metal-containing film, to react the organic compound with the transition metal element, thereby converting the organic compound into an organometallic complex, and desorbing the organometallic complex, wherein the organic compound has Lewis basicity, and is a multidentate ligand molecule capable of forming a bidentate or more coordination bond with the transition metal element.

Exemplary integrated cluster tools may include a factory interface including a first transfer robot. The tools may include a wet clean system coupled with the factory interface at a first side of the wet clean system. The tools may include a load lock chamber coupled with the wet clean system at a second side of the wet clean system opposite the first side of the wet clean system. The tools may include a first transfer chamber coupled with the load lock chamber. The first transfer chamber may include a second transfer robot. The tools may include a second transfer chamber coupled with the first transfer chamber. The second transfer chamber may include a third transfer robot. The tools may include a metal deposition chamber coupled with the transfer chamber.

Exemplary integrated cluster tools may include a factory interface including a first transfer robot. The tools may include a wet clean system coupled with the factory interface at a first side of the wet clean system. The tools may include a load lock chamber coupled with the wet clean system at a second side of the wet clean system opposite the first side of the wet clean system. The tools may include a first transfer chamber coupled with the load lock chamber. The first transfer chamber may include a second transfer robot. The tools may include a second transfer chamber coupled with the first transfer chamber. The second transfer chamber may include a third transfer robot. The tools may include a metal deposition chamber coupled with the transfer chamber.

Process chambers are cleaned from tin oxide deposits by a method that includes a step of forming a volatile tin-containing compound by exposing the tin oxide to a mixture of hydrogen (H.sub.2) and a hydrocarbon in a plasma, followed by a step that removes a carbon-containing polymer that formed as a result of the hydrocarbon exposure. The carbon-containing polymer can be removed by exposing the carbon-containing polymer to an oxygen-containing reactant (e.g., to O.sub.2 in a plasma), or to H.sub.2 in an absence of a hydrocarbon. These steps are repeated as many times as necessary to clean the process chamber. The method can be used to clean ALD, CVD, and PVD process chambers and is particularly useful for cleaning at a relatively low temperature of less than about 120° C.

There is provided a technique that includes: a first nozzle arranged to correspond to a first region where a plurality of product substrates are arranged in a substrate arrangement region where a plurality of substrates are arranged in a reaction tube, the first nozzle supplying a hydrogen-containing gas into the reaction tube; a second nozzle arranged to correspond to the first region and supplying an oxygen-containing gas into the reaction tube; a third nozzle arranged closer to the bottom opening than the first region to correspond to a second region where a dummy substrate or a heat insulator or both is arranged, the third nozzle supplying a dilution gas into the reaction tube; and a controller configured to be capable of controlling the hydrogen-containing gas and the dilution gas so that a concentration of the hydrogen-containing gas in the second region is lower than that in the first region.

There is provided a technique that includes: a first nozzle arranged to correspond to a first region where a plurality of product substrates are arranged in a substrate arrangement region where a plurality of substrates are arranged in a reaction tube, the first nozzle supplying a hydrogen-containing gas into the reaction tube; a second nozzle arranged to correspond to the first region and supplying an oxygen-containing gas into the reaction tube; a third nozzle arranged closer to the bottom opening than the first region to correspond to a second region where a dummy substrate or a heat insulator or both is arranged, the third nozzle supplying a dilution gas into the reaction tube; and a controller configured to be capable of controlling the hydrogen-containing gas and the dilution gas so that a concentration of the hydrogen-containing gas in the second region is lower than that in the first region.

A substrate processing method includes supplying processing gas from a plurality of gas holes formed along a longitudinal direction of an injector, which extends in a vertical direction along an inner wall surface of a processing container and is rotatable around a rotational axis extending in the vertical direction, to perform a predetermined process on a substrate accommodated in the processing container. The predetermined process includes a plurality of operations, and a supply direction of the processing gas is changed by rotating the injector in accordance with the operations.