A HFCVD device for continuous preparation of a diamond thin film includes left and right chamber gate valves, left and right thin film growth chambers, left and right chamber water-cooled electrodes, left and right chamber hot filament racks, left and right chamber hot filaments, a sample access chamber, a substrate, a substrate platform, and a substrate trolley. The hot filament is configured in a vertical layout to prevent being bent and deformed during the heating and coating processes. The hot filament is stably kept a distance from the substrate to improve the coating quality and enhance the uniformity of the diamond film. The device is able to continuously use, to reduce filament consumption, to reduce auxiliary times for reinstalling the filament, vacuuming, carbonizing the filament, and filling the vacuum chamber, and to greatly improve the production efficiency of diamond thin film.

A HFCVD device for continuous preparation of a diamond thin film includes left and right chamber gate valves, left and right thin film growth chambers, left and right chamber water-cooled electrodes, left and right chamber hot filament racks, left and right chamber hot filaments, a sample access chamber, a substrate, a substrate platform, and a substrate trolley. The hot filament is configured in a vertical layout to prevent being bent and deformed during the heating and coating processes. The hot filament is stably kept a distance from the substrate to improve the coating quality and enhance the uniformity of the diamond film. The device is able to continuously use, to reduce filament consumption, to reduce auxiliary times for reinstalling the filament, vacuuming, carbonizing the filament, and filling the vacuum chamber, and to greatly improve the production efficiency of diamond thin film.

Discussed is a chemical vapor deposition apparatus that includes a reaction chamber with an open top and an open bottom, at least one inner partition wall can be in the reaction chamber and can divide an inner space of the reaction chamber in a height direction to form a plurality of division chambers. A heater can be further disposed at an outer surface of the reaction chamber, a plurality of upper winding rolls can be disposed above the reaction chamber, and at least one roller can be disposed below the reaction chamber.

Coating processes for vacuum chamber arrangements and apparatus thereof are herein disclosed. In some aspects, a coating process may include coating at least one workpiece using a vacuum chamber arrangement. The vacuum chamber arrangement may include a vacuum chamber, a substrate holding arrangement, an additional substrate holding arrangement, one or more bearings, a supply hose and an additional supply hose. The vacuum chamber may include a lock chamber, an additional lock chamber, a heating chamber, an additional heating chamber, and a coating chamber. The one or more bearings may support the substrate holding arrangement in such a way that it can be moved between the lock chamber and the coating chamber. The one or more bearings may also support the additional substrate holding arrangement in such a way that it can be moved between the additional lock chamber and the coating chamber.

Coating processes for vacuum chamber arrangements and apparatus thereof are herein disclosed. In some aspects, a coating process may include coating at least one workpiece using a vacuum chamber arrangement. The vacuum chamber arrangement may include a vacuum chamber, a substrate holding arrangement, an additional substrate holding arrangement, one or more bearings, a supply hose and an additional supply hose. The vacuum chamber may include a lock chamber, an additional lock chamber, a heating chamber, an additional heating chamber, and a coating chamber. The one or more bearings may support the substrate holding arrangement in such a way that it can be moved between the lock chamber and the coating chamber. The one or more bearings may also support the additional substrate holding arrangement in such a way that it can be moved between the additional lock chamber and the coating chamber.

The present disclosure relates to stacks having a hermetic overlayer, as well as methods and apparatuses for applying such hermetic overlayers. In particular embodiments, the hermetic overlayer allows a film to be employed as a positive tone, EUV photoresist with dry development.

The present disclosure relates to stacks having a hermetic overlayer, as well as methods and apparatuses for applying such hermetic overlayers. In particular embodiments, the hermetic overlayer allows a film to be employed as a positive tone, EUV photoresist with dry development.

Contamination from outgassing during a deposition process is addressed by a series of equipment enhancements, including throttle valves, a dual air curtain, and a residual gas analysis (RGA) monitor. The dual air curtain can be configured to flow a first gas during wafer processing and a second gas during wafer unloading, to re-direct and capture outgassed species. The dual air curtain and the throttle valves can be programmed in an automated feedback control system that utilizes data from the RGA monitor.

A film formation apparatus includes a stage for having a substrate thereon; a mist generation source that generates a mist of a solution containing at least water and in which a material for forming a film on the substrate is dissolved; a supply path that conveys the mist toward the substrate on the stage by a flow of a carrier gas; and a heater that heats at least a part of the supply path. The part of the supply path heated by the heater is provided as a mist heating section in which infrared rays are radiated from an inner surface of the supply path toward the mist. The inner surface of the supply path in the mist heating section is coated with a coating layer containing at least one of an oxide and a hydroxide of an element present in the mist.

A film formation apparatus includes a stage for having a substrate thereon; a mist generation source that generates a mist of a solution containing at least water and in which a material for forming a film on the substrate is dissolved; a supply path that conveys the mist toward the substrate on the stage by a flow of a carrier gas; and a heater that heats at least a part of the supply path. The part of the supply path heated by the heater is provided as a mist heating section in which infrared rays are radiated from an inner surface of the supply path toward the mist. The inner surface of the supply path in the mist heating section is coated with a coating layer containing at least one of an oxide and a hydroxide of an element present in the mist.