A vapor deposition device is provided that can make uniform a CVD film thickness at a circumferential edge of a wafer. A carrier is formed in an endless ring shape having a bottom surface that rests on a top surface of a susceptor, a top surface touching and supporting an outer edge of a reverse face of a wafer, an outer circumferential wall surface, and an inner circumferential wall surface, and the carrier is also configured with a structure or shape in a circumferential direction of the top surface that has a correspondence relationship to a crystal orientation in the circumferential direction of the wafer, and a before-treatment wafer is mounted on the carrier such that the crystal orientation in the circumferential direction of the before-treatment wafer and the structure or shape in the circumferential direction have a correspondence relationship.

A film forming apparatus comprises a film forming vessel comprising a first mold and a second mold that is arranged to be opposed to the first mold. The first mold is configured to include a first recessed portion and a first planar portion arranged around the first recessed portion and an exhaust port in a bottom portion of the first recessed portion. The film forming apparatus also comprises a seal member placed between the first planar portion of the first mold and the second mold. The seal member is configured to keep inside of the film forming vessel airtight; and an exhaust device connected with the exhaust port. The work is placed away from the first planar portion such that a film formation target part of the work faces an internal space of the first recessed portion when the film forming vessel is closed. A film forming method comprises (a) forming a film on part of the work by the film forming apparatus; (b) opening the film forming vessel after the (a); and (e) at a start of the (b), evacuating the film forming vessel via the exhaust port by the exhaust device.

A plasma apparatus configured to form a film on or etch a work piece includes: a vacuum chamber including a first casing that has a first recess and a first flat part disposed around the first recess, and a second casing disposed opposite to the first casing; an insulating member that is disposed between the first flat part of the first casing and the second casing, and is configured to contact with the work piece in a state where the work piece faces a space inside the first recess and is separated from the first flat part; and an electricity application unit that is configured to apply electricity to the work piece, wherein a distance between the first flat part and a contact point between the work piece and the insulating member is shorter than a distance between the work piece and a bottom part of the first recess.

A film forming apparatus configured to form a film on part of a work. The film forming apparatus comprises a film forming vessel comprising a first mold located above the work and a second mold located below the work to be opposed to the first mold. The first mold is configured to include a first recessed portion that is recessed upward viewed from a film formation target part of the work and a first planar portion arranged around the first recessed portion. The second mold is configured to include a second planar portion in a place opposed to the first planar portion. The film forming apparatus also comprises a first seal member located between the first planar portion and the work. The first seal member is configured to come into contact with the first planar portion and the work when the work is away from the first planar portion. The film forming apparatus further comprises a second seal member located between the second planar portion and the work. The second seal member is configured to come into contact with the second planar portion and the work when the work is away from the second planar portion. The second seal member is provided on a lower face of the work. This configuration suppresses poor film formation when the seal member is placed between the film forming vessel and the work.

A method and apparatus for a deposition chamber is provided and includes a twin chamber that includes a first remote plasma system coupled and dedicated to a first processing region, a second remote plasma system coupled and dedicated to a second processing region, and a third remote plasma system shared by the first processing region and the second processing region.

Disclosed are methods of depositing films of material on multiple semiconductor substrates in a multi-station processing chamber. The methods may include loading a first set of one or more substrates into the processing chamber at a first set of one or more process stations and depositing film material onto the first set of substrates by performing N cycles of film deposition. Thereafter, the methods may further include transferring the first set of substrates from the first set of process stations to a second set of one or more process stations, loading a second set of one or more substrates at the first set of process stations, and depositing film material onto the first and second sets of substrates by performing N′ cycles of film deposition, wherein N′ is not equal to N. Also disclosed are apparatuses and computer-readable media which may be used to perform similar operations.

Disclosed are methods of depositing films of material on multiple semiconductor substrates in a multi-station processing chamber. The methods may include loading a first set of one or more substrates into the processing chamber at a first set of one or more process stations and depositing film material onto the first set of substrates by performing N cycles of film deposition. Thereafter, the methods may further include transferring the first set of substrates from the first set of process stations to a second set of one or more process stations, loading a second set of one or more substrates at the first set of process stations, and depositing film material onto the first and second sets of substrates by performing N′ cycles of film deposition, wherein N′ is not equal to N. Also disclosed are apparatuses and computer-readable media which may be used to perform similar operations.

Methods of depositing an adamantane film are described, which may be used in the manufacture of integrated circuits. Methods include processing a substrate in which an adamantane seed layer is deposited on a substrate, converting to a diamond nuclei layer having an increased crystallinity relative to the adamantane seed layer and then grown into full nanocrystalline diamond film from the diamond nuclei layer.

An apparatus and method for coating a substrate moved along a path of travel through the apparatus. A plasma source issues a plasma jet into which a first reagent is injected from a discharge orifice located upstream of the jet. A second reagent is injected into the jet from a discharge orifice located downstream of the jet. A controller is configured to regulate the flow of the first reagent according to a first set of parameters and regulate the flow of the second reagent according to a second set of parameters. As a result, the first and second reagents are applied to the substrate to form at least one layer of a coating on the substrate.

An apparatus and method for coating a substrate moved along a path of travel through the apparatus. A plasma source issues a plasma jet into which a first reagent is injected from a discharge orifice located upstream of the jet. A second reagent is injected into the jet from a discharge orifice located downstream of the jet. A controller is configured to regulate the flow of the first reagent according to a first set of parameters and regulate the flow of the second reagent according to a second set of parameters. As a result, the first and second reagents are applied to the substrate to form at least one layer of a coating on the substrate.