The invention relates to a process for preparing a composite layer, by applying an oligomeric organic compound layer on a substrate with a metal or metal oxide layer by vapour deposition, comprising the steps of (a) providing a substrate layer, (b) applying a metal or metal oxide layer under reduced pressure on said substrate, and (c) vapour depositing the oligomeric organic compound on the metal or metal oxide layer while the film remains at reduced pressure, wherein the oligomeric compound is evaporated from an oligomeric or polymeric compound comprising a stabiliser, or wherein the oligomeric compound is amorphous, or has a high solubility in certain solvents.

In some embodiments, an inline substrate processing tool may include a substrate carrier having a plurality of slots configured to retain a plurality of substrates parallel to each other when disposed in the slots, a first substrate processing module and a second substrate processing module disposed in a linear arrangement, wherein each substrate processing module includes an enclosure and a track that supports the substrate carrier and provides a path for the substrate carrier to move linearly through the first and second substrate processing modules, and a first gas cap disposed between the first and second substrate processing modules, wherein the first gas cap includes a first process gas conduit to provide a first process gas to the first substrate processing module, and a second process gas conduit to provide a second process gas to the second substrate processing module.

In some embodiments, an inline substrate processing tool may include a substrate carrier having a plurality of slots configured to retain a plurality of substrates parallel to each other when disposed in the slots, a first substrate processing module and a second substrate processing module disposed in a linear arrangement, wherein each substrate processing module includes an enclosure and a track that supports the substrate carrier and provides a path for the substrate carrier to move linearly through the first and second substrate processing modules, and a first gas cap disposed between the first and second substrate processing modules, wherein the first gas cap includes a first process gas conduit to provide a first process gas to the first substrate processing module, and a second process gas conduit to provide a second process gas to the second substrate processing module.

A substrate processing apparatus, including: a process chamber configured to process substrates; a substrate mounting stand installed in the process chamber and configured to support the substrates along a circumferential direction; a rotating unit configured to rotate the substrate mounting stand; a first gas supply unit configured to supply a first gas from above the substrate mounting stand; a second gas supply unit configured to supply a second gas from above the substrate mounting stand; a third gas supply unit configured to supply a cleaning gas from above the substrate mounting stand; and an elevating unit configured to maintain the substrate mounting stand at a substrate processing position while supplying the first gas and the second gas and also configured to maintain the substrate mounting stand at a cleaning position while supplying the cleaning gas.

The present document discloses a gas inlet device (21, 21a-21k) for use in a reactor for gas treatment of a substrate. The gas inlet device comprises an inlet niche having a back wall (233), and a side wall (234, 235) extending in a downstream direction (F) from the back wall (233) towards an inlet niche opening (212), an impingement surface (243), a gas orifice (210), which is configured to direct a gas flow towards the impingement surface (243), and a taper surface (244, 245), extending downstream of the impingement surface (243), such that a flow gap (213) having, along the downstream direction (F), gradually increasing cross sectional area, is formed between the side wall (234, 235) and the taper surface (244, 245).

The document further discloses a mixing device, a gas outlet device a reactor and the use of such reactor.

A reactor for forming fully coated particles having a solid core, the reactor comprises a reactor vessel which is configured to receive particles, and a gas phase coating mechanism that is configured to selectively introduce pulses of gas phase materials that form a coating on the particles. The reactor also includes a sieve (16) that is located within the reactor vessel, and a forcing means that is configured to force the particles through the sieve (16) in use. The sieve is configured to deagglomerate any particle aggregates formed in the reactor vessel upon forcing of the particles by the forcing means through the sieve.

A reactor for forming fully coated particles having a solid core, the reactor comprises a reactor vessel which is configured to receive particles, and a gas phase coating mechanism that is configured to selectively introduce pulses of gas phase materials that form a coating on the particles. The reactor also includes a sieve (16) that is located within the reactor vessel, and a forcing means that is configured to force the particles through the sieve (16) in use. The sieve is configured to deagglomerate any particle aggregates formed in the reactor vessel upon forcing of the particles by the forcing means through the sieve.

Method for manufacturing an inert solid support with optionally functionalised carbon nanotubes (CNTs), comprising the steps of: i) providing an inert solid support and at least one catalytic metal associated with, or absorbed in, or adsorbed/deposited on, said support, said metal being optionally selected from among the group consisting of iron, cobalt, nickel, molybdenum and combinations thereof; ii) supplying a source of gaseous, liquid or solid carbon to the catalytic metal; iii) through chemical vapor deposition (CVD), depositing at least part of the carbon source at the catalytic metal as CNTs, stably connected to the inert solid support. The present invention further regards an inert solid support and a separation method.

Method for manufacturing an inert solid support with optionally functionalised carbon nanotubes (CNTs), comprising the steps of: i) providing an inert solid support and at least one catalytic metal associated with, or absorbed in, or adsorbed/deposited on, said support, said metal being optionally selected from among the group consisting of iron, cobalt, nickel, molybdenum and combinations thereof; ii) supplying a source of gaseous, liquid or solid carbon to the catalytic metal; iii) through chemical vapor deposition (CVD), depositing at least part of the carbon source at the catalytic metal as CNTs, stably connected to the inert solid support. The present invention further regards an inert solid support and a separation method.

A method of forming a kilometer(s)-length high temperature superconductor tape by feeding a textured tape from roll-to-roll through a reactor chamber, flowing high temperature superconductor precursors from an elongated precursor showerhead positioned in the chamber the elongation in a direction along the tape; flowing gas from first and second elongated gas curtain shower heads on either side of the precursor showerhead; and illuminating the upper surface of the tape with illumination from sources on opposing sides of the reactor, the illumination sources positioned so as to allow illumination to pass under a respective one of the curtain shower heads and under the precursor showerhead to the upper surface of the tape.