An apparatus for manufacturing a polysilicon rod comprising: a core wire 1 on which polysilicon is deposited; a core wire electrode 60 provided to penetrate a bottom plate 80; an adjustment member 10 provided between the silicon core wire 1 and the core wire electrode 60, and movable with respect to the bottom plate 80; and a cooling part capable of cooling the adjustment member 10.

A chemical vapor deposition furnace for depositing silicon nitride films, is discloses. The furnace comprising a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector is provided inside the process chamber extending in a substantially vertical direction over substantially a wafer boat height and comprising a feed end connected to a source of a silicon precursor and a source of a nitrogen precursor and a plurality of vertically spaced gas injection holes to provide gas from the feed end to the process chamber. The furnace may comprise a purge gas injection system to provide a purge gas into the process chamber near a lower end of the process chamber.

A chemical vapor deposition furnace for depositing silicon nitride films, is discloses. The furnace comprising a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector is provided inside the process chamber extending in a substantially vertical direction over substantially a wafer boat height and comprising a feed end connected to a source of a silicon precursor and a source of a nitrogen precursor and a plurality of vertically spaced gas injection holes to provide gas from the feed end to the process chamber. The furnace may comprise a purge gas injection system to provide a purge gas into the process chamber near a lower end of the process chamber.

A continuous-feed chemical vapor deposition system and an associated method are provided. An example of the continuous-feed chemical vapor deposition system includes a first chamber configured to receive a substrate. The continuous-feed chemical vapor deposition system includes a second chamber downstream from the first chamber and configured to receive the substrate from the first chamber. The second chamber is configured to perform a chemical vapor deposition process on the substrate. The continuous-feed chemical vapor deposition system includes a third chamber downstream from the second chamber that is configured to receive the substrate from the second chamber upon completion of the chemical vapor deposition process. The second chamber can be environmentally isolated from the first chamber and the third chamber. The first chamber is further configured to receive a subsequent substrate when the chemical vapor deposition process is occurring in the second chamber.

A continuous-feed chemical vapor deposition system and an associated method are provided. An example of the continuous-feed chemical vapor deposition system includes a first chamber configured to receive a substrate. The continuous-feed chemical vapor deposition system includes a second chamber downstream from the first chamber and configured to receive the substrate from the first chamber. The second chamber is configured to perform a chemical vapor deposition process on the substrate. The continuous-feed chemical vapor deposition system includes a third chamber downstream from the second chamber that is configured to receive the substrate from the second chamber upon completion of the chemical vapor deposition process. The second chamber can be environmentally isolated from the first chamber and the third chamber. The first chamber is further configured to receive a subsequent substrate when the chemical vapor deposition process is occurring in the second chamber.

A rotary plasma reactor system is provided. In another aspect, a plasma reactor is rotatable about a generally horizontal axis within a vacuum chamber. A further aspect employs a plasma reactor, a vacuum chamber, and an elongated electrode internally extending within a central area of the reactor. Yet another aspect employs a plasma reactor for use in activating, etching and/or coating tumbling workpiece material.

Provided herein are methods and apparatuses for controlling uniformity of processing at an edge region of a semiconductor wafer. In some embodiments, the methods include providing a backside inhibition gas as part of a deposition-inhibition-deposition (DID) sequence.

A chemical vapor deposition process for depositing a coating comprising silicon oxide and titanium oxide is provided. A coating formed by the chemical vapor deposition process is also provided.

A thin film deposition system includes a vacuum-preloaded gas bearing deposition head positioned in an external environment having an ambient pressure, the deposition head having an output face including a plurality of source openings through which gaseous materials are supplied and one or more exhaust openings. An exhaust pressure at the exhaust openings is less than ambient pressure, and a source pressure at the source openings is greater than that at the exhaust openings, with the pressure at the outermost source openings being greater than ambient pressure. A motion control system moves a substrate unit over the output face in the in-track direction without constraining its motion in a direction normal to the output face to a point where a center of gravity of the substrate unit is beyond the first edge of the output face.

A substrate processing apparatus, including a reaction chamber to process a substrate, a photon source to provide the reaction chamber with photons from the top side of the reaction chamber, a substrate support to support the substrate, a chemical inlet to provide the reaction chamber with a reactive chemical; and a chemical outlet to exhaust gases from the reaction chamber, the chemical outlet including a surface separating the reaction chamber from a surrounding space.