A device for coating containers includes at least one vacuum device for generating a vacuum, and at least one treatment station for coating containers with a plasma, wherein the treatment station is in fluid communication with the vacuum device and wherein the treatment station has at least one treatment device which can be introduced into a container, a conveyor device for transporting containers on a transport path P and at least one support element to receive at least one container, wherein the support element is movable in a direction perpendicular to the transport path P of the containers and is suitable for introducing the container into a treatment station, wherein a closure element is arranged on the support element and the closure element is suitable for closing the treatment station in an airtight manner.

A stress-free transparent silicon oxide coated polymer substrates and a method for depositing a stress-free transparent silicon oxide based layer on polymer substrates using a PECVD device including at least one hollow cathode plasma source.

The present disclosure relates to a substrate processing method and apparatus which can supply gas to a plurality of process chamber through one gas supply unit, and supply different gases at the same time, thereby improving the uniformity of the thicknesses of thin films deposited in the respective chambers.

The substrate processing method and apparatus can perform a process in only one chamber by supplying gas to only the chamber at the same time or perform different processes in the plurality of chambers by supplying different gases to the respective chambers. Therefore, films having uniform thicknesses can be deposited in the respective chambers, and the gas supply efficiency can be improved.

The present disclosure relates to an atomic layer deposition apparatus, and more particularly, to an atomic layer deposition apparatus for depositing an atomic layer on a flexible substrate.

The roll-to-roll atomic layer deposition apparatus according to the embodiment of the present disclosure includes: a casing for providing an inner space that maintains a sealed state; a substrate transfer assembly which is provided in the inner space of the casing and includes a plurality of roll units; and a gas supply assembly for depositing an atomic layer on one surface and a rear surface of a flexible substrate transferred by the substrate transfer assembly, wherein the gas supply assembly includes an upper gas supply module facing the one surface of the substrate, and a lower gas supply module which is spaced apart from the upper gas supply module with the substrate being interposed therebetween and faces the rear surface of the substrate, and the upper gas supply module and the lower gas supply module include at least one purge gas supply unit, at least one reaction gas supply unit, and at least one source gas supply unit that are disposed along the transfer direction of the substrate.

The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a substrate support, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. Each of the upper lamp assembly and the lower lamp assembly include vertically oriented lamp apertures for the placement of heating lamps therein. The inject ring includes gas injectors disposed therethrough and the base ring includes a substrate transfer passage, a lower chamber exhaust passage, and one or more upper chamber exhaust passages. The gas injectors are disposed over the substrate transfer passage and across from the lower chamber exhaust passage and the one or more upper chamber exhaust passages.

A semiconductor processing chamber for processing semiconductor substrates may include a pedestal to support a substrate with a heater zones and a wire mesh configured to deliver a Radio Frequency (RF) signal to a plasma. The chamber may also include heater zone controls that deliver current to the heater zones and a filter circuit between the heater zone controls and the heater zones. The filter circuit may include inductors on leads from the heater zones and a resonant circuit with a resonant inductor that is magnetically coupled to the lead inductors. The resonant circuit may produce a resonant peak that filters the RF signal delivered to the wire mesh from the leads from the heater zones to prevent the RF signal from reaching the heater zone controls.

A dry powder MOCVD vapor source system is disclosed that utilizes a gravimetric powder feeder, a feed rate measurement and feeder control system, an evaporator and a load lock system for continuous operation for thin film production, particularly of REBCO type high temperature superconductor (HTS) tapes.

A deposition apparatus and method of deposition are provided. The deposition apparatus includes a gas supply unit, including: a first process gas supply unit blowing a first process gas onto a deposition-target surface; a second process gas supply unit blowing a second process gas different from the first process gas onto the deposition-target surface of the substrate; and air curtain units blocking an area between an area where the process gas is blown and an area where the second process gas is blown, by blowing an inert gas.

A deposition apparatus and method of deposition are provided. The deposition apparatus includes a gas supply unit, including: a first process gas supply unit blowing a first process gas onto a deposition-target surface; a second process gas supply unit blowing a second process gas different from the first process gas onto the deposition-target surface of the substrate; and air curtain units blocking an area between an area where the process gas is blown and an area where the second process gas is blown, by blowing an inert gas.

Examples of a substrate treatment apparatus includes a chamber, a substrate support stage located inside the chamber, an elevation device that moves the substrate support stage up and down, a gate valve provided between the chamber and an adjacent chamber that is adjacent to the chamber, and a chamber state controller including a processor and a memory configured to cause the processor to execute a program stored in the memory, or including a dedicated circuitry, to move the elevation device and the gate valve before a next substrate treatment is performed in the chamber, in a state in which no substrate is present in the chamber.