A process for large-scale production of graphene comprising a step of applying graphene onto a movable surface carrying multiple particles using a PECVD-based process operating at low temperatures enabling the coating of materials that are at risk of melting, decomposing or deforming at higher temperatures. The graphene can be separated from said particles, and the particles re-circulated in the process. A production unit designed for continuous or semi-continuous large-scale production of graphene and graphene-coated particles, where said graphene-coated particles are either the desired end-product, or an intermediate. Graphene-coated particles, in particular particles where the graphene forms flakes having a desired orientation in relation to a surface of said particles.

Embodiments of the present disclosure generally relate to methods for forming epitaxial layers on a semiconductor device. In one or more embodiments, methods include removing oxides from a substrate surface during a cleaning process, flowing a processing reagent containing a silicon source and exposing the substrate to the processing reagent during an epitaxy process, and stopping the flow of the processing reagent. The method also includes flowing a purging gas and pumping residues from the processing system, stopping the flow of the purge gas, flowing an etching gas and exposing the substrate to the etching gas. The etching gas contains hydrogen chloride and at least one germanium and/or chlorine compound. The method further includes stopping the flow of the at least one compound while continuing the flow of the hydrogen chloride and exposing the substrate to the hydrogen chloride and stopping the flow of the hydrogen chloride.

Embodiments of the present disclosure generally relate to methods for forming epitaxial layers on a semiconductor device. In one or more embodiments, methods include removing oxides from a substrate surface during a cleaning process, flowing a processing reagent containing a silicon source and exposing the substrate to the processing reagent during an epitaxy process, and stopping the flow of the processing reagent. The method also includes flowing a purging gas and pumping residues from the processing system, stopping the flow of the purge gas, flowing an etching gas and exposing the substrate to the etching gas. The etching gas contains hydrogen chloride and at least one germanium and/or chlorine compound. The method further includes stopping the flow of the at least one compound while continuing the flow of the hydrogen chloride and exposing the substrate to the hydrogen chloride and stopping the flow of the hydrogen chloride.

A gate valve provided in a boundary portion between two sections to block communication between the two sections, the gate valve includes a base, a first moving mechanism installed on the base and configured to move a first movement body along a first linear track, a second moving mechanism installed on the first movement body, and configured to operate at a timing different from the first moving mechanism and to move a second movement body along a second linear track orthogonal to the first linear track, and a valve body installed on the second movement body and configured to come into contact with a contact surface so as to perform sealing. One of the first linear track and the second linear track is parallel to a direction orthogonal to the contact surface.

A gate valve provided in a boundary portion between two sections to block communication between the two sections, the gate valve includes a base, a first moving mechanism installed on the base and configured to move a first movement body along a first linear track, a second moving mechanism installed on the first movement body, and configured to operate at a timing different from the first moving mechanism and to move a second movement body along a second linear track orthogonal to the first linear track, and a valve body installed on the second movement body and configured to come into contact with a contact surface so as to perform sealing. One of the first linear track and the second linear track is parallel to a direction orthogonal to the contact surface.

A method of forming a ruthenium film on a substrate by supplying a ruthenium-containing gas includes: forming an adsorption inhibition layer that inhibits adsorption of the ruthenium-containing gas by supplying an adsorption inhibition gas to an end portion and a rear surface of the substrate; transferring the substrate to a chamber; and forming the ruthenium film on the substrate by supplying the ruthenium-containing gas to the chamber.

A method of forming a ruthenium film on a substrate by supplying a ruthenium-containing gas includes: forming an adsorption inhibition layer that inhibits adsorption of the ruthenium-containing gas by supplying an adsorption inhibition gas to an end portion and a rear surface of the substrate; transferring the substrate to a chamber; and forming the ruthenium film on the substrate by supplying the ruthenium-containing gas to the chamber.

A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.

A chemical vapor deposition process for forming a silicon oxide coating includes providing a moving glass substrate. A gaseous mixture is formed and includes a silane compound, a first oxygen-containing molecule, a radical scavenger, and at least one of a phosphorus-containing compound and a boron-containing compound. The gaseous mixture is directed toward and along the glass substrate. The gaseous mixture is reacted over the glass substrate to form a silicon oxide coating on the glass substrate at a deposition rate of 150 nm*m/min or more.

A film forming apparatus includes: a pressure-reducible processing container; a pressure gauge configured to detect a pressure in the processing container; and a controller, wherein the controller is configured to repeat a cycle including a step of adjusting a zero point of the pressure gauge and a step of executing a film forming process in the processing container until an ultimate pressure, which is detected by the pressure gauge when an interior of the processing container is evacuated to a highest reachable vacuum degree after the step of executing the film forming process, reaches a target range.