Methods for preparing and using at least one protective coating on industrial articles and storage systems are disclosed. In one example, the industrial components are dry storage cannisters for spent nuclear fuel or other waste materials. An example method for preparing at least one protective coating on dry storage cannisters for spent nuclear fuel and waste includes dissolving a dispersant in an organic solvent. The method further includes adding a polymer-derived ceramic (PDC) to the organic solvent and dissolved dispersant to create a pre-ceramic solution. The method further includes applying the pre-ceramic solution on a metal and/or alloy of industrial articles and storage systems such as the dry storage cannisters.

Methods for preparing and using at least one protective coating on industrial articles and storage systems are disclosed. In one example, the industrial components are dry storage cannisters for spent nuclear fuel or other waste materials. An example method for preparing at least one protective coating on dry storage cannisters for spent nuclear fuel and waste includes dissolving a dispersant in an organic solvent. The method further includes adding a polymer-derived ceramic (PDC) to the organic solvent and dissolved dispersant to create a pre-ceramic solution. The method further includes applying the pre-ceramic solution on a metal and/or alloy of industrial articles and storage systems such as the dry storage cannisters.

A metal doped silicon-containing film-forming composition for forming a metal doped silicon-containing film comprises: 1) at least one silicon-containing precursor, 2) a metal precursor, and 3) a solvent, wherein the metal precursor is selected from an alkyl metal, alkyl metalloxane or polymetalloxane, wherein the metal doped silicon-containing film-forming composition is capable of forming the metal doped silicon-containing film.

A metal doped silicon-containing film-forming composition for forming a metal doped silicon-containing film comprises: 1) at least one silicon-containing precursor, 2) a metal precursor, and 3) a solvent, wherein the metal precursor is selected from an alkyl metal, alkyl metalloxane or polymetalloxane, wherein the metal doped silicon-containing film-forming composition is capable of forming the metal doped silicon-containing film.

Provided is a method for preparing a continuous carbon nanotube (CNT) network film, comprising: preparing CNT dispersion by placing a preset amount of CNT powder in a preset dispersion medium; obtaining an original CNT film with discrete and loosely lapped CNTs by placing the CNT dispersion on a surface of a substrate; placing the original CNT film with the substrate in a chamber of a heating furnace; setting a heating program to promote interaction between the original CNT film and the substrate, thereby causing the CNTs in the original CNT film to assemble into a whole continuous Y-type interconnected network with a long common segment under driving of the facets. The transparency, electrical conductivity, mechanical properties, and other properties of the assembled continuous CNT network film are enhanced, and whole, large-area, flexible and free-standing assembled continuous CNT network films with unlimited length and width is prepared.

Provided is a method for preparing a continuous carbon nanotube (CNT) network film, comprising: preparing CNT dispersion by placing a preset amount of CNT powder in a preset dispersion medium; obtaining an original CNT film with discrete and loosely lapped CNTs by placing the CNT dispersion on a surface of a substrate; placing the original CNT film with the substrate in a chamber of a heating furnace; setting a heating program to promote interaction between the original CNT film and the substrate, thereby causing the CNTs in the original CNT film to assemble into a whole continuous Y-type interconnected network with a long common segment under driving of the facets. The transparency, electrical conductivity, mechanical properties, and other properties of the assembled continuous CNT network film are enhanced, and whole, large-area, flexible and free-standing assembled continuous CNT network films with unlimited length and width is prepared.

A method includes plasma treating one or more surfaces of a metal matrix composite substrate. The metal matrix composite substrate includes a metal matrix and composite fibers. After said plasma treating, the method also includes applying a sol-gel layer on the one or more surfaces of the metal matrix composite substrate.

A method includes plasma treating one or more surfaces of a metal matrix composite substrate. The metal matrix composite substrate includes a metal matrix and composite fibers. After said plasma treating, the method also includes applying a sol-gel layer on the one or more surfaces of the metal matrix composite substrate.

A fabricating equipment and method for a semiconductor device is provided. The fabricating equipment comprises a process chamber including an internal space, a substrate support which supports a substrate including a first film and a second film, inside the internal space, a nozzle which is placed on the substrate support and supplies a process gas, a first heater which is placed inside the substrate support and heats the substrate and a second heater which generates one of waves of a first frequency and waves of a second frequency to differentially heat the first film and the second film.

A method for forming a conductive metal-polymer composite coated polymer includes providing a polymer substrate and immersing the polymer substrate in a metal solution. The method further includes decomposing the metal solution in a thermally controlled environment and reducing the metal solution to metal such that the metal is deposited on a surface of the polymer substrate. After reducing the metal solution, the method includes treating the surface with a polymer coating to form the metal-polymer composite coated polymer.