Provided is a barrier film, comprising a base layer and an inorganic layer including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, and having a compactness expressed through an etching rate of 0.17 nm/s in the thickness direction for an Ar ion etching condition to etch Ta.sub.2O.sub.5 at a rate of 0.09 nm/s, wherein the second region has a higher elemental content of N than that of the first region, and the second region has a thickness of 10% or more relative to the total thickness of the inorganic layer. The barrier film has excellent barrier properties and optical properties and can be used for electronic products which are sensitive to moisture and the like.

The present invention relates to a photoelectric film and a fabrication method thereof, and in particular, to a layered polycrystalline lead selenide (PbSe) film and a fabrication method thereof. The fabrication method mainly includes: (1) fabricating a dense PbSe layer on a substrate through chemical bath deposition (CBD); (2) fabricating a loose plumbonacrite (Pb.sub.10O(OH).sub.6(CO.sub.3).sub.6) layer on the dense PbSe layer through CBD; (3) placing a sample with the dense PbSe layer and the Pb.sub.10O(OH).sub.6(CO.sub.3).sub.6 layer in a selenium ion-containing solution to allow an ion exchange reaction to finally form the layered polycrystalline PbSe film. The fabrication method has the advantages of simple process, low cost, and high controllability. The PbSe film fabricated by the method is composed of a lower dense polycrystalline cubic PbSe layer and an upper loose polycrystalline cubic PbSe layer, which can be widely used in the fabrication of components in the field of photoelectric conversion or thermoelectric conversion, such as infrared (IR) sensors, solar cells, laser emitters, and thermoelectric converters.

The present invention relates to a photoelectric film and a fabrication method thereof, and in particular, to a layered polycrystalline lead selenide (PbSe) film and a fabrication method thereof. The fabrication method mainly includes: (1) fabricating a dense PbSe layer on a substrate through chemical bath deposition (CBD); (2) fabricating a loose plumbonacrite (Pb.sub.10O(OH).sub.6(CO.sub.3).sub.6) layer on the dense PbSe layer through CBD; (3) placing a sample with the dense PbSe layer and the Pb.sub.10O(OH).sub.6(CO.sub.3).sub.6 layer in a selenium ion-containing solution to allow an ion exchange reaction to finally form the layered polycrystalline PbSe film. The fabrication method has the advantages of simple process, low cost, and high controllability. The PbSe film fabricated by the method is composed of a lower dense polycrystalline cubic PbSe layer and an upper loose polycrystalline cubic PbSe layer, which can be widely used in the fabrication of components in the field of photoelectric conversion or thermoelectric conversion, such as infrared (IR) sensors, solar cells, laser emitters, and thermoelectric converters.

A method of manufacturing transition metal chalcogenide thin films, includes the operations of forming a transition metal chalcogenides precursor on a substrate, and irradiating light onto the transition metal chalcogenides precursor. The transition metal chalcogenides precursor includes an amine-based ligand.

A method of manufacturing transition metal chalcogenide thin films, includes the operations of forming a transition metal chalcogenides precursor on a substrate, and irradiating light onto the transition metal chalcogenides precursor. The transition metal chalcogenides precursor includes an amine-based ligand.

A nanowire-equipped film comprises a substrate made of a crystalline resin, and nanowires made of a metal oxide and grown directly on the substrate. A fine textured structure is formed on a surface of the substrate, and the nanowires are grown directly from the textured structure.

A nanowire-equipped film comprises a substrate made of a crystalline resin, and nanowires made of a metal oxide and grown directly on the substrate. A fine textured structure is formed on a surface of the substrate, and the nanowires are grown directly from the textured structure.

The present disclosure relates to a plated steel material that can be used in an automobile, a household appliance, a building material, and the like, and more particularly, to a zinc alloy plated steel material having excellent surface quality and corrosion resistance, and a method for manufacturing the same.

The present disclosure relates to a plated steel material that can be used in an automobile, a household appliance, a building material, and the like, and more particularly, to a zinc alloy plated steel material having excellent surface quality and corrosion resistance, and a method for manufacturing the same.

The present invention provides electrodes comprising a core substrate, and internal layer coating, and an external layer coating and processes to prepare such electrodes.