Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

A method of manufacturing transition metal chalcogenide thin films, includes the operations of forming a transition metal chalcogenides precursor on a substrate, and irradiating light onto the transition metal chalcogenides precursor. The transition metal chalcogenides precursor includes an amine-based ligand.

A method of manufacturing transition metal chalcogenide thin films, includes the operations of forming a transition metal chalcogenides precursor on a substrate, and irradiating light onto the transition metal chalcogenides precursor. The transition metal chalcogenides precursor includes an amine-based ligand.

A polymer dispersion layer is formed on a substrate or semiconductor light-emitting devices on the substrate. After forming the polymer dispersion layer, drying and curing the polymer dispersion layer forms a cured polymer layer. After curing and drying, with the cured polymer layer being present on only selected, masked areas of the substrate or light-emitting devices, and with other areas of the substrate or light-emitting devices lacking the cured polymer layer and remaining exposed, a material layer is formed on at least the exposed areas of the substrate or light-emitting devices. After forming the material layer, the cured polymer layer is removed from the masked areas, leaving the material layer on the exposed areas.

Described herein is a technology for the creation of “smooth” metal oxide films or coatings using organic cross-linking agents to enable low-temperature sintering. These metal oxide films can be used in conjunction with low-melting temperature substrates, such as plastics, metal, metal oxide, and glass, providing exquisite control over surface roughness.

Described herein is a technology for the creation of “smooth” metal oxide films or coatings using organic cross-linking agents to enable low-temperature sintering. These metal oxide films can be used in conjunction with low-melting temperature substrates, such as plastics, metal, metal oxide, and glass, providing exquisite control over surface roughness.

One aspect relates to a method for the manufacture of a medical electrode, including: (i) providing a substrate; (ii) applying a composition onto the substrate, wherein the composition comprises (a) a non-aqueous solvent and (b) an organic precious metal complex compound that is dissolved in the solvent; (iii) heating the composition and thereby forming a precious metal layer on the substrate, wherein the solubility of the organic precious metal complex compound in propylene glycol mono-propyl ether at 25° C. and 1013 hPa is at least 1 mass percent, or at least 2, 3, 4, 5 or 10 mass percent, in relation to the total mass of the composition.

One aspect relates to a method for the manufacture of a medical electrode, including: (i) providing a substrate; (ii) applying a composition onto the substrate, wherein the composition comprises (a) a non-aqueous solvent and (b) an organic precious metal complex compound that is dissolved in the solvent; (iii) heating the composition and thereby forming a precious metal layer on the substrate, wherein the solubility of the organic precious metal complex compound in propylene glycol mono-propyl ether at 25° C. and 1013 hPa is at least 1 mass percent, or at least 2, 3, 4, 5 or 10 mass percent, in relation to the total mass of the composition.

A nanowire forming method, including the forming of a DNA origami having through openings, and the forming in the through openings of portions forming all or part of the nanowires.