A composition of matter includes a substrate material (M) having a bulk portion and an outer surface integrated to the bulk portion. The outer surface includes a modified surface layer. The modified surface layer extends to a depth from the outer surface of at least 1 nm. The modified surface layer includes M and at least one other material (X) which is a metal or metal alloy. The modified surface layer has a 25 C. electrical conductivity which is at least 2.5% above or below a 25 C. electrical conductivity in the bulk portion of M. The composition of matter can be an article that includes a frequency selective surface-based metamaterial, and the plurality of modified surface portions can be a plurality of periodic surface elements that provide a resonant frequency.

The disclosure is and includes at least an apparatus, system and method for a ramped electrical interconnection for use in semiconductor fabrications. The apparatus, system and method includes at least a first semiconductor substrate having thereon a first electrical circuit comprising first electrical components; a second semiconductor substrate at least partially covering the first electrical circuit, and having thereon a second electrical circuit comprising second electrical components; a ramp formed through the second semiconductor substrate between at least one of the first electrical components and at least one of the second electrical components; and an additively manufactured conductive trace formed on the ramp to electrically connect the at least one first electrical component and the at least one second electrical component.

The disclosure is and includes at least an apparatus, system and method for a ramped electrical interconnection for use in semiconductor fabrications. The apparatus, system and method includes at least a first semiconductor substrate having thereon a first electrical circuit comprising first electrical components; a second semiconductor substrate at least partially covering the first electrical circuit, and having thereon a second electrical circuit comprising second electrical components; a ramp formed through the second semiconductor substrate between at least one of the first electrical components and at least one of the second electrical components; and an additively manufactured conductive trace formed on the ramp to electrically connect the at least one first electrical component and the at least one second electrical component.

A method for synthesizing a copper-silver alloy includes an ink preparation step, a coating step, a crystal nucleus formation step and a crystal nucleus synthesis step. In the ink preparation step, a copper salt particle, an amine-based solvent, and a silver salt particle are mixed, thereby preparing a copper-silver ink. In the coating step, a member to be coated is coated with the copper-silver ink. In the crystal nucleus formation step, at least one of a crystal nucleus of copper having a crystal grain diameter of 0.2 m or less and a crystal nucleus of silver having a crystal grain diameter of 0.2 m or less is formed from the copper-silver ink. In the crystal nucleus synthesis step, the crystal nucleus of copper and the crystal nucleus of silver are synthesized.

A method for synthesizing a copper-silver alloy includes an ink preparation step, a coating step, a crystal nucleus formation step and a crystal nucleus synthesis step. In the ink preparation step, a copper salt particle, an amine-based solvent, and a silver salt particle are mixed, thereby preparing a copper-silver ink. In the coating step, a member to be coated is coated with the copper-silver ink. In the crystal nucleus formation step, at least one of a crystal nucleus of copper having a crystal grain diameter of 0.2 m or less and a crystal nucleus of silver having a crystal grain diameter of 0.2 m or less is formed from the copper-silver ink. In the crystal nucleus synthesis step, the crystal nucleus of copper and the crystal nucleus of silver are synthesized.

The present disclosure relates to tungsten bronze thin films and method of making the same. Specifically, the present disclosure relates to a thin, homogeneous, highly conducting cubic tungsten bronze film with densely packed micron size particles and the process of making the film.

The present disclosure relates to tungsten bronze thin films and method of making the same. Specifically, the present disclosure relates to a thin, homogeneous, highly conducting cubic tungsten bronze film with densely packed micron size particles and the process of making the film.

Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some implementations, the methods involve providing a tungsten (W)-containing layer on a substrate; and depositing a molybdenum (Mo)-containing layer on the W-containing layer. In some implementations, the methods involve depositing a Mo-containing layer directly on a dielectric or titanium nitride (TiN) substrate without an intervening W-containing layer.

Composite structures having a reinforced material intermingled with a substrate wherein the reinforced material includes titanium monoboride, titanium diboride, or a combination thereof.

Composite structures having a reinforced material intermingled with a substrate wherein the reinforced material includes titanium monoboride, titanium diboride, or a combination thereof.