The present invention relates to a method and an apparatus for coating large area solid substrates with metal based alloys or compounds by contacting the substrate surface with an unoxidised metal powders formed by in situ reaction of a metal halide and a reducing agent. The method is suitable for coating large area substrates such as flakes, powder, beads, and fibres with metal based alloys or compounds starting from low-cost chemicals such as metal chlorides. The method is particularly suited for production of substrates coated with metals, alloys and compounds based on Zn, Sn, Ag, Co, V, Ni, Cr, Fe, Cu, Pt, Pd, Ta, Nb, Rh, Ru, Mo, Os, Re and W.

The present invention relates to a method and an apparatus for coating large area solid substrates with metal based alloys or compounds by contacting the substrate surface with an unoxidised metal powders formed by in situ reaction of a metal halide and a reducing agent. The method is suitable for coating large area substrates such as flakes, powder, beads, and fibres with metal based alloys or compounds starting from low-cost chemicals such as metal chlorides. The method is particularly suited for production of substrates coated with metals, alloys and compounds based on Zn, Sn, Ag, Co, V, Ni, Cr, Fe, Cu, Pt, Pd, Ta, Nb, Rh, Ru, Mo, Os, Re and W.

Surface having properties for reducing diffuse light due to water condensation, wherein the antifog means consist in atomic aggregates adhered to and dispersed over the surface, wherein the aggregates are selected among the transition metals and the silicon. It is also related to a method for obtaining a surface having properties for reducing diffuse light due to water condensation a wavelength selected in the range from 100 nm to 50 micrometers, comprising the steps of selecting the wavelength, obtaining a glass or polymer surface that has been subjected to optical polishing and adhering to the surface atomic aggregates which are selected among the transition metals and the silicon with a separation between them being lower than or having an order of the selected wavelength selected. Thus a durable antifogging surface is obtained.

Surface having properties for reducing diffuse light due to water condensation, wherein the antifog means consist in atomic aggregates adhered to and dispersed over the surface, wherein the aggregates are selected among the transition metals and the silicon. It is also related to a method for obtaining a surface having properties for reducing diffuse light due to water condensation a wavelength selected in the range from 100 nm to 50 micrometers, comprising the steps of selecting the wavelength, obtaining a glass or polymer surface that has been subjected to optical polishing and adhering to the surface atomic aggregates which are selected among the transition metals and the silicon with a separation between them being lower than or having an order of the selected wavelength selected. Thus a durable antifogging surface is obtained.

An aerosol ink is generally provided, along with methods of forming an aerosol ink. In one embodiment, the aerosol ink includes a plurality of chromium-containing metallic microparticles dispersed in a solvent system. Generally, the chromium-containing metallic microparticles comprise elemental chromium mixed with at least one alloying element. A non-contact method is also generally provided of forming a chromium-containing metallic layer on a surface of a substrate.

An aerosol ink is generally provided, along with methods of forming an aerosol ink. In one embodiment, the aerosol ink includes a plurality of chromium-containing metallic microparticles dispersed in a solvent system. Generally, the chromium-containing metallic microparticles comprise elemental chromium mixed with at least one alloying element. A non-contact method is also generally provided of forming a chromium-containing metallic layer on a surface of a substrate.

The disclosure is and includes at least an apparatus, system and method for a ramped electrical interconnection for use in semiconductor fabrications. The apparatus, system and method includes at least a first semiconductor substrate having thereon a first electrical circuit comprising first electrical components; a second semiconductor substrate at least partially covering the first electrical circuit, and having thereon a second electrical circuit comprising second electrical components; a ramp formed through the second semiconductor substrate between at least one of the first electrical components and at least one of the second electrical components; and an additively manufactured conductive trace formed on the ramp to electrically connect the at least one first electrical component and the at least one second electrical component.

The disclosure is and includes at least an apparatus, system and method for a ramped electrical interconnection for use in semiconductor fabrications. The apparatus, system and method includes at least a first semiconductor substrate having thereon a first electrical circuit comprising first electrical components; a second semiconductor substrate at least partially covering the first electrical circuit, and having thereon a second electrical circuit comprising second electrical components; a ramp formed through the second semiconductor substrate between at least one of the first electrical components and at least one of the second electrical components; and an additively manufactured conductive trace formed on the ramp to electrically connect the at least one first electrical component and the at least one second electrical component.

Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some implementations, the methods involve providing a tungsten (W)-containing layer on a substrate; and depositing a molybdenum (Mo)-containing layer on the W-containing layer. In some implementations, the methods involve depositing a Mo-containing layer directly on a dielectric or titanium nitride (TiN) substrate without an intervening W-containing layer.

Oxides formed during annealing of stainless steel strip are removed with abrasive brushes, in lieu of acid or molten salt based pickling. In some embodiments, the stainless steel strip is treated with a rare earth element or a related transition metal before annealing, and then brushed after annealing to remove any oxides. The selection of brushes can impart a finished appearance to conventionally polished stainless steel.