A preparation containing: (A) 30 to 90 wt. % of at least one organic solvent, (B) 10 to 70 wt. % of at least one noble metal complex comprising diolefin and C6-C18 monocarboxylate ligands selected from the group consisting of noble metal complexes of the type [LPd[O(CO)R1]X].sub.n, [LRh[O(CO)R1]].sub.m, and [LIr[O(CO)R1]].sub.m, wherein L represents a compound acting as diolefin ligand, wherein X is selected among bromide, chloride, iodide, and —O(CO)R2, wherein —O(CO)R1 and —O(CO)R2 represent identical or different non-aromatic C6-C18 monocarboxylic acid residues, and wherein n is an integral number 1, and m is an integral number 2, and (C) 0 to 10 wt. % of at least one additive.

A preparation containing: (A) 30 to 90 wt. % of at least one organic solvent, (B) 10 to 70 wt. % of at least one noble metal complex comprising diolefin and C6-C18 monocarboxylate ligands selected from the group consisting of noble metal complexes of the type [LPd[O(CO)R1]X].sub.n, [LRh[O(CO)R1]].sub.m, and [LIr[O(CO)R1]].sub.m, wherein L represents a compound acting as diolefin ligand, wherein X is selected among bromide, chloride, iodide, and —O(CO)R2, wherein —O(CO)R1 and —O(CO)R2 represent identical or different non-aromatic C6-C18 monocarboxylic acid residues, and wherein n is an integral number 1, and m is an integral number 2, and (C) 0 to 10 wt. % of at least one additive.

A method for synthesizing and simultaneously depositing and coating one or more layers of mixed metals to obtain one or more layers of high entropy alloys (HEAs) includes depositing a first metal precursor ink and drying the first metal precursor ink to obtain a first precursor film layer, applying a laser-direct writing (LDW) with pulsed laser source to the first precursor film layer to obtain a first layer of HEA, and rinsing the first layer of HEA with water to remove un-sintered precursor film to obtain one or more layers of HEAs. The first layer of HEA has a first metal corresponding to the first metal precursor. The one or more layers of HEAs includes a predetermined pattern of one or more layers, and the one or more layers may have a single metal or multiple metals.

Methods, systems, and apparatus for coating the internal surface of nano-scale cavities on a substrate are contemplated. A first fluid of high wettability is applied to the nano-scale cavity, filling the cavity. A second fluid carrying a conductor or a catalyst is applied over the opening of the nano-scale cavity. The second fluid has a lower vapor pressure than the first fluid. The first fluid is converted to a gas, for example by heating the substrate. The gas exits the nano-scale cavity, creating a negative pressure or vacuum in the nano-scale cavity. The negative pressure draws the second fluid into the nano-scale cavity. The conductor is deposited on the interior surface of the nano-scale cavity, preferably less than 10 nm thick.

A method for synthesizing a copper-silver alloy includes an ink preparation step, a coating step, a crystal nucleus formation step and a crystal nucleus synthesis step. In the ink preparation step, a copper salt particle, an amine-based solvent, and a silver salt particle are mixed, thereby preparing a copper-silver ink. In the coating step, a member to be coated is coated with the copper-silver ink. In the crystal nucleus formation step, at least one of a crystal nucleus of copper having a crystal grain diameter of 0.2 μm or less and a crystal nucleus of silver having a crystal grain diameter of 0.2 μm or less is formed from the copper-silver ink. In the crystal nucleus synthesis step, the crystal nucleus of copper and the crystal nucleus of silver are synthesized.

A method for synthesizing a copper-silver alloy includes an ink preparation step, a coating step, a crystal nucleus formation step and a crystal nucleus synthesis step. In the ink preparation step, a copper salt particle, an amine-based solvent, and a silver salt particle are mixed, thereby preparing a copper-silver ink. In the coating step, a member to be coated is coated with the copper-silver ink. In the crystal nucleus formation step, at least one of a crystal nucleus of copper having a crystal grain diameter of 0.2 μm or less and a crystal nucleus of silver having a crystal grain diameter of 0.2 μm or less is formed from the copper-silver ink. In the crystal nucleus synthesis step, the crystal nucleus of copper and the crystal nucleus of silver are synthesized.

A conductive structure is provided. The conductive ink composition includes a silver complex formed by mixing a silver carboxylate, at least one dissolving agent that dissolves the silver carboxylate, and a catalyst. The catalyst includes an amine that decarboxylates the silver carboxylate to make the conductive ink composition. The catalyst decarboxylates the silver carboxylate at a temperature of 100° C. or less. An ink composition comprising a metallic salt with a sterically bulky counter ion and a ligand is also provided. An ink composition for milking a conductive structure, comprising a reducible metal complex formed by mixing: a reducing agent, wherein the reducing agent is dissolved in a dissolving agent; and at least one metal salt or metal complex comprising a Group 4, 5, 6, 7, 8, 9, 10, 11, or 12 metal, wherein the reducing agent reduces the metal to form the conductive structures farther provided.

A conductive structure is provided. The conductive ink composition includes a silver complex formed by mixing a silver carboxylate, at least one dissolving agent that dissolves the silver carboxylate, and a catalyst. The catalyst includes an amine that decarboxylates the silver carboxylate to make the conductive ink composition. The catalyst decarboxylates the silver carboxylate at a temperature of 100° C. or less. An ink composition comprising a metallic salt with a sterically bulky counter ion and a ligand is also provided. An ink composition for milking a conductive structure, comprising a reducible metal complex formed by mixing: a reducing agent, wherein the reducing agent is dissolved in a dissolving agent; and at least one metal salt or metal complex comprising a Group 4, 5, 6, 7, 8, 9, 10, 11, or 12 metal, wherein the reducing agent reduces the metal to form the conductive structures farther provided.

A method of manufacturing a semiconductor package which is at least in part covered by an electromagnetic interference shielding layer. The method includes at least these steps: i. providing the semiconductor package and an ink composition having at least a compound comprising at least one metal precursor and at least one organic compound; ii. applying at least a part of the ink composition onto the semiconductor package, wherein a precursor layer is formed; and iii. treating the precursor layer with an irradiation of a peak wavelength in the range from 100 nm to 1 mm. Further disclosed is a semiconductor package comprising an electromagnetic interference shielding layer comprising at least one metal, wherein the semiconductor package is obtainable by the aforementioned method. Still further disclosed are a semiconductor package comprising an electromagnetic interference shielding layer having a specific conductance and thickness, and uses of an ink composition.

A composite structural component is disclosed. The composite structural component can include a lattice structure, a casing disposed about at least a portion of the lattice structure, and a skin adhered to a surface of the casing. The lattice structure and the casing can be formed of a polymeric material and the skin can be formed of a metallic material. A method of manufacturing a composite structural component is disclosed. The method can include creating a casing of a polymeric material and creating a lattice structure of a polymeric material disposed about at least a portion of the casing. The method can include sealing the porosity of the casing and lattice structure. The method can include adhering a skin of a metallic material to at least a portion of the casing. At least one of creating a lattice structure and creating a casing comprises utilizing an additive manufacturing process.