A process of making an electrochromic or an electrolytic film by Ultrasonic Spray Pyrolysis (USP) deposition on a substrate comprising: mixing a surfactant to an aqueous precursor solution comprising an electrochromic component or an electrolytic component to provide a spray solution; introducing the spray solution into an ultrasonic spray deposition nozzle at a constant flow rate between 0.1 mL/min and 2 mL/min and applying an ultrasonic frequency between 80 and 120 kHz to generate atomized droplets of the precursor solution; entraining the atomized droplets with a controlled jet of air as gas carrier at a pressure between 0.50 to 2.0 psi, onto a pre-heated substrate at a temperature of 200 to 450° C.; thermally converting the atomized droplets when depositing onto the pre-heated substrate to generate an electrochromic or an electrolytic film.

A coating agent for forming an oxide film; a method for producing an oxide film; and a method for producing a metal-plated structure, where the stability of the coating agent can be enhanced, and an oxide film which can be plated and has high adhesion to a substrate can be easily formed. The coating agent for forming an oxide film is a liquid coating agent, essentially contains titanium atoms, and optionally contains silicon atoms and copper atoms, wherein the ratio of the sum of the titanium atoms and copper atoms to the silicon atoms is 1:0-3:2. The method for producing an oxide film includes applying the coating agent to a substrate and heating to form an oxide film. The method for producing a metal-plated structure includes: a metal-film-forming step for forming a metal film on the oxide film; and a baking step for baking the metal film.

A coating composition and a method for coating metallic substrates, such as aircraft components exposed to elevated temperatures and/or oxidative conditions. The coating composition includes an aqueous mixture having about 2 vol % to about 50 vol % organosilane, about 0.3 to about 25 vol % metal alkoxide, and about 0.1 to about 30 vol % organic complexing agent. The coating composition may be deposited on a metallic substrate and cured to form a sol-gel coating on the surface of the substrate that is adherent to the substrate, and oxidation and discoloration resistant.

Provided is a method for forming a capacitor. The method includes: providing an anode with a dielectric thereon and a conductive node in electrical contact with the anode; applying a conductive seed layer on the dielectric; forming a conductive bridge between the conductive seed layer and the conductive node; applying voltage to the anode; electrochemically polymerizing a monomer thereby forming an electrically conducting polymer of monomer on the conductive seed layer; and disrupting the conductive bridge between the conductive seed layer and the conductive node.

[Problem] Provided is an oxide dielectric having superior properties, and a solid state electronic device (for example, a high pass filter, a patch antenna, a capacitor, a semiconductor device, or a microelectromechanical system) including the oxide dielectric.

[Solution] The oxide layer 30 according to the present invention includes an oxide (possibly including inevitable impurities) consisting essentially of bismuth (Bi) and niobium (Nb) and having a crystal phase of the pyrochlore-type crystal structure, in which the number of atoms of the above niobium (Nb) is 1.3 or more and 1.7 or less when the number of atoms of the above bismuth (Bi) is assumed to be 1.

The invention provides a method for providing a luminescent particle (100) with a hybrid coating, the method comprising: (i) providing a luminescent core (102) comprising a primer layer (105) on the luminescent core (102); (ii) providing a main ALD coating layer (120) onto the primer layer (105) by application of a main atomic layer deposition process, the main ALD coating layer (120) comprising a multilayer (1120) with two or more layers (1121) having different chemical compositions, and wherein in the main atomic layer deposition process a metal oxide precursor is selected from a group of metal oxide precursors comprising Al, Zn, Hf, Ta, Zr, Ti, Sn, Nb, Y, Ga, and V; (iii) providing a main sol-gel coating layer (130) onto the main ALD-coating layer (120) by application of a main sol-gel coating process, the main sol-gel coating layer (130) having a chemical composition different from one or more of the layers (1121) of the multilayer (1120).

In accordance with one aspect of the present invention, a heating device is presented. The heating device includes a pyrocatalytic, non-stick coating disposed on at least one surface. The pyrocatalytic non-stick coating includes (i) a binder derived from a silane, a polysiloxane, a polysilazane, or combinations thereof; and (ii) a catalyst dispersed within the binder, wherein the catalyst comprises a pervoskite crystalline material, a pyrochlore crystalline material, a spinel crystalline material, an ilmenite crystalline material, or combinations hereof.

A conductive paste for forming a solar cell electrode, including: a conductive powder containing silver as a main component; glass frit; and an organic vehicle, wherein the glass frit contains tellurium glass frit having tellurium oxide as a network-forming component. The conductive paste of the present invention makes it possible to form a solar cell electrode having a low dependence on firing temperature without causing problems due to fire-through into the substrate, and to thereby obtain a solar cell having good solar cell characteristics.

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.

Disclosed are barrier coatings for fused silica components used in semiconductor processing. In particular, the present disclosure concerns protective substrate-barrier coatings composed of corrosion-resilient metal compounds which provide superior resistance to erosion/corrosion when a coated substrate is subjected to the acidic environments at elevated temperatures typical for semiconductor processing.