Embodiments of the invention include a method of initiating an optical fiber. In some embodiments, a distal portion of the optical fiber is coated with an energy absorbing material. In some embodiments, the material includes a metal flakes or powder dispersed in a solution of organic solvents. After the material dries, laser energy is fired through the optical fiber. The laser energy can be absorbed in the material and ignites the organic solvents. This combustion melts the material of the optical fiber, and impregnates the optical fiber with the metal flakes or powder of the material. The resulting optical fiber is thus permanently modified so that the energy applied through the fiber is partially absorbed and converted to heat.

Embodiments of the invention include a method of initiating an optical fiber of a tip assembly to form a finished tip assembly. In some embodiments, at least a portion of a distal portion of the optical fiber is coated with an energy absorbing initiating material. In some embodiments, the initiating material is an enamel material including a mixture of brass (copper and zinc) flakes or aluminum flakes in a solution of organic solvents. After the initiating material dries, a diode laser is fired through the optical fiber. The laser energy is at least partially absorbed in the initiating material and ignites the organic solvents. This combustion melts the material of the optical fiber, and impregnates the optical fiber with the metal flakes of the initiating material. The resulting initiated optical fiber is thus permanently modified so that the energy applied through the fiber is partially absorbed and converted to heat.

A method for patterning a metal layer on a substrate is disclosed. Furthermore, a kit comprising a first composition comprising a reducing agent and a second composition comprising a metal salt, and an article comprising a substrate in contact with a metal layer are also disclosed.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

There is provided a technique of forming an insulating film containing silicon oxide. A coating solution containing polysilazane is applied onto a wafer W, the solvent of the coating solution is volatilized, and the coating film is irradiated with ultraviolet rays in nitrogen atmosphere before performing a curing process. Dangling bonds are generated in silicon which is a pre-hydrolyzed site in polysilazane. Therefore, the energy for hydrolysis is reduced, and unhydrolyzed sites are reduced even when the temperature of the curing process is 350° C. Since efficient dehydration condensation occurs, the crosslinking rate is improved, and a dense (good-quality) insulation film is formed. By forming a protective film on the surface of the coating film to which ultraviolet rays irradiated, the reaction of dangling bonds prior to the curing process is suppressed.

Systems for depositing materials and related methods are described. The systems allow condensing or depositing a precursor on a substrate, and then curing condensed or deposited precursor to form a layer.

A method for synthesizing and simultaneously depositing and coating one or more layers of mixed metals to obtain one or more layers of high entropy alloys (HEAs) includes depositing a first metal precursor ink and drying the first metal precursor ink to obtain a first precursor film layer, applying a laser-direct writing (LDW) with pulsed laser source to the first precursor film layer to obtain a first layer of HEA, and rinsing the first layer of HEA with water to remove un-sintered precursor film to obtain one or more layers of HEAs. The first layer of HEA has a first metal corresponding to the first metal precursor. The one or more layers of HEAs includes a predetermined pattern of one or more layers, and the one or more layers may have a single metal or multiple metals.

A method for synthesizing a copper-silver alloy includes an ink preparation step, a coating step, a crystal nucleus formation step and a crystal nucleus synthesis step. In the ink preparation step, a copper salt particle, an amine-based solvent, and a silver salt particle are mixed, thereby preparing a copper-silver ink. In the coating step, a member to be coated is coated with the copper-silver ink. In the crystal nucleus formation step, at least one of a crystal nucleus of copper having a crystal grain diameter of 0.2 μm or less and a crystal nucleus of silver having a crystal grain diameter of 0.2 μm or less is formed from the copper-silver ink. In the crystal nucleus synthesis step, the crystal nucleus of copper and the crystal nucleus of silver are synthesized.

A method of manufacturing a semiconductor package which is at least in part covered by an electromagnetic interference shielding layer. The method includes at least these steps: i. providing the semiconductor package and an ink composition having at least a compound comprising at least one metal precursor and at least one organic compound; ii. applying at least a part of the ink composition onto the semiconductor package, wherein a precursor layer is formed; and iii. treating the precursor layer with an irradiation of a peak wavelength in the range from 100 nm to 1 mm. Further disclosed is a semiconductor package comprising an electromagnetic interference shielding layer comprising at least one metal, wherein the semiconductor package is obtainable by the aforementioned method. Still further disclosed are a semiconductor package comprising an electromagnetic interference shielding layer having a specific conductance and thickness, and uses of an ink composition.

A method for producing an electrically conductive thin film on a substrate is disclosed. Initially, a reducible metal compound and a reducing agent are dispersed in a liquid. The dispersion is then deposited on a substrate as a thin film. The thin film along with the substrate is subsequently exposed to a pulsed electromagnetic emission to chemically react with the reducible metal compound and the reducing agent such that the thin film becomes electrically conductive.