Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

Provided is a barrier film, comprising: a base layer; and an inorganic layer including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, and having a compactness expressed through an etching rate of 0.17 nm/s or less in the thickness direction for an Ar ion etching condition to etch Ta.sub.2O.sub.5 at a rate of 0.09 nm/s, wherein the second region has a higher elemental content of N than that of the first region, the first region has a thickness of 50 nm or more, and the ratio (d1/d2) of the thickness (d1) of the first region to the thickness (d2) of the second region is 2 or less, the barrier film having excellent barrier properties and optical properties. The barrier film can be used for electronic products sensitive to moisture or the like.

Provided are a perovskite film and a manufacturing method thereof. The method includes the following steps. A perovskite precursor material is coated in a linear direction on a substrate with a temperature between 100° C. and 200° C., wherein a concentration of the perovskite precursor material is between 0.05 M and 1.5 M. An infrared light irradiation is performed on the perovskite precursor material to cure the perovskite precursor material to form a thin film including a compound represented by formula (1). The perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure.

(RNH.sub.3).sub.2MA.sub.(n−1)M.sup.1.sub.nX.sub.(3n+1)  formula (1), wherein the definitions of R, MA, M.sup.1, X, and n are as defined above.

Provided are a perovskite film and a manufacturing method thereof. The method includes the following steps. A perovskite precursor material is coated in a linear direction on a substrate with a temperature between 100° C. and 200° C., wherein a concentration of the perovskite precursor material is between 0.05 M and 1.5 M. An infrared light irradiation is performed on the perovskite precursor material to cure the perovskite precursor material to form a thin film including a compound represented by formula (1). The perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure.
(RNH.sub.3).sub.2MA.sub.(n−1)M.sup.1.sub.nX.sub.(3n+1)  formula (1), wherein the definitions of R, MA, M.sup.1, X, and n are as defined above.

Methods of forming porous nano-scale or micro-scale structured materials and structured materials formed thereby. Such methods entail providing a donor material and reacting the donor material to form a compound that deposits on a surface of a substrate to produce nano-scale or micro-scale geometric features of the structured material. In particular embodiments, the donor material is in a solution and the reacting step is performed by contacting the surface of the substrate with the solution and directing heat through the solution onto the surface to locally heat a portion of the solution in contact therewith.

An additive manufacturing process for forming a metallic layer on the surface of the substrate includes fabricating a substrate from a polymerizable composition by a stereolithographic process, and contacting the reactive surface with an aqueous solution including a metal precursor. The metal precursor includes a metal, and the polymerizable composition includes a multiplicity of multifunctional components. Each multifunctional component includes a reactive moiety extending from a surface of the substrate to form a reactive surface. An interface between the reactive surface and the aqueous solution is selectively irradiated to form nanoparticles including the metal in a desired pattern. The nanoparticles are chemically coupled to the reactive surface by reactive moieties, thereby forming a metallic layer on the surface of the substrate.

Thin glass-like ceramic films which possess organic or physically functional structures with thicknesses in the 15 to 500 nm range and bottom-up methods for their fabrication are described. SiO.sub.2-rich structures having gradient properties are formed from a silsesquioxane having an electronegative β substituent and at least one organofunctional silane or at least one metal alkoxide.

An additive manufacturing process for forming a metallic layer on the surface of the substrate includes fabricating a substrate from a polymerizable composition by a stereolithographic process, and contacting the reactive surface with an aqueous solution including a metal precursor. The metal precursor includes a metal, and the polymerizable composition includes a multiplicity of multifunctional components. Each multifunctional component includes a reactive moiety extending from a surface of the substrate to form a reactive surface. An interface between the reactive surface and the aqueous solution is irradiated to form nanoparticles including the metal. The nanoparticles are chemically coupled to the reactive surface by reactive moieties, thereby forming a metallic layer on the surface of the substrate.

In example implementations, a method to convert metal precursors in textiles is provided. The method includes applying a liquid metal precursor to a textile. Then, energy (e.g., heat and/or pressure) is applied to the textile. The metal precursor is converted into metal nanoparticles in the textile by sustaining application of the energy.

A method of manufacturing transition metal chalcogenide thin films, includes the operations of forming a transition metal chalcogenides precursor on a substrate, and irradiating light onto the transition metal chalcogenides precursor. The transition metal chalcogenides precursor includes an amine-based ligand.