Described herein is a technology for the creation of smooth metal oxide films or coatings using organic cross-linking agents to enable low-temperature sintering. These metal oxide films can be used in conjunction with low-melting temperature substrates, such as plastics, metal, metal oxide, and glass, providing exquisite control over surface roughness.

An ink composition including a metal salt amine complex; wherein the metal salt amine complex is formed from a metal salt and an amine; a compound selected from the group consisting of a stable free radical, a photoacid generator, and a thermal acid generator; and an optional solvent. A process including forming a metal salt amine complex; adding a compound selected from the group consisting of a stable free radical, a photoacid generator, and a thermal acid generator to the metal salt amine complex to form an ink. A process forming conductive features on a substrate with the ink composition.

A method for producing an electrically conductive thin film on a substrate is disclosed. Initially, a reducible metal compound and a reducing agent are dispersed in a liquid. The dispersion is then deposited on a substrate as a thin film. The thin film along with the substrate is subsequently exposed to a pulsed electromagnetic emission to chemically react with the reducible metal compound and the reducing agent such that the thin film becomes electrically conductive.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

A coating liquid for forming a metal oxide film, the coating liquid including: a metal source, which is at least one selected from the group consisting of inorganic salts, oxides, hydroxides, metal complexes, and organic acid salts; at least one alkali selected from the group consisting of organic alkalis and inorganic alkalis; and a solvent.

A method for producing an electrically conductive thin film on a substrate is disclosed. Initially, a reducible metal compound and a reducing agent are dispersed in a liquid. The dispersion is then deposited on a substrate as a thin film. The thin film along with the substrate is subsequently exposed to a pulsed electromagnetic emission to chemically react with the reducible metal compound and the reducing agent such that the thin film becomes electrically conductive.

A method for preparing a metal layer comprising: a) preparing a liquid composition comprising at least one precursor of at least one metal, at least one solvent of the precursor and at least one photo-initiator, the concentration of the precursor being at least 0.6% by weight relative to the weight of the liquid composition; b) depositing the liquid composition on a substrate forming a liquid composition deposited on a substrate; c) irradiating with a UV, Vis and IR source the liquid composition deposited on a substrate obtained at step b) forming a metal layer comprising or consisting of the metal; d) obtaining a metal layer. The present invention also relates to a material comprising a substrate and a metal layer, the metal layer being in contact with said substrate, the metal layer consisting of particles of metal in spatial contact together thereby forming a continuous metal layer of particles.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

A process for depositing a coating on a continuous fibre of carbon or silicon carbide from a precursor of the coating, includes heating a segment of the fibre in the presence of the coating precursor in a microwave field so as to bring the surface of the segment to a temperature allowing the coating to form on the segment from the coating precursor, wherein the segment of fibre is in the presence of a supercritical phase of the precursor of the coating in the reactor and the coating is formed by supercritical phase chemical deposition in the reactor.

Apparatuses, systems, and methods for electrical field-assisted heterogeneous material printing (EF-HMP) of metal-polymer composite structure include a printing platform, a solution tank, an optical projection system, and an electrical field generation and control module. An additive manufacturing method for a metal-polymer composite structure includes preparing a photocurable electrolyte solution by mixing a photocurable liquid resin with a conductive nanofiller, a metal salt solution, a photo initiator, and deionized water. The method further includes initiating photopolymerization of the photocurable liquid resin to form a photocured polymer matrix by directing a projection of ultraviolet light energy from a light source onto the photocurable electrolyte solution. The method further includes depositing a metal structure onto the photocured polymer matrix. In this manner, both the photopolymerization and the metal electrodeposition are performed using the same photocurable electrolyte solution.