Embodiments of the present disclosure provide for methods and systems for making structures using an electrospray system while under vacuum. In particular, embodiments of the present disclosure provide for methods and systems for ultra-fast growth of high aspect ratio nano/meso/micro-structures with three dimensional topological complexity and control of phase and composition of the structure formed.

A manufacturing method of a wire grid polarizer is provided, including: setting pattern data, where the pattern data correspond to a wire grid structure of the wire grid polarizer; preparing a metal ion solution; immersing at least one surface of a carrier substrate in the metal ion solution; and emitting, by an emitter device, an electron beam to the carrier substrate, and controlling a movement of the electron beam according to the pattern data to deposit a metal on the carrier substrate at a position where the electron beam passes, to form the wire grid structure.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

Described herein is a technology for the creation of smooth metal oxide films or coatings using organic cross-linking agents to enable low-temperature sintering. These metal oxide films can be used in conjunction with low-melting temperature substrates, such as plastics, metal, metal oxide, and glass, providing exquisite control over surface roughness.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

A method for forming a crystalline metal layer on a three-dimensional (3D) substrate is provided. The method includes applying crystal growth ink to a surface of the 3D substrate, wherein the crystal growth ink includes a metal ionic precursor and a structuring liquid; and exposing the 3D substrate to plasma irradiation from plasma in a vacuum chamber to cause the growing of a crystalline metal layer on the 3D substrate, wherein the exposure is based on a set of predefined exposure parameters.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

A method and system for forming a thin patterned metal film on a substrate are presented. The method includes applying an ink composition on a pre-treated surface of the substrate, wherein the ink composition includes at least metal cations; and exposing at least the applied ink composition on the substrate to a low-energy plasma, wherein the low-energy plasma is operated according to a first set of exposure parameters.

The present disclosure relates to a method for chemical vapour deposition on a substrate, the method comprising a precursor step and a reactant step, wherein the precursor step comprises chemisorbing a layer of precursor molecules on the substrate (170), and wherein the reactant step comprises adding to at least part of the substrate (170) surface species able to reduce the precursor molecule, whereby at least a part of the reduced precursor molecule is deposited on the substrate (170) surface, characterized by applying by means of a voltage source (130) a positive bias to at least part of the substrate (170) surface during at least part of the reactant step, wherein the step of adding the reducing species comprises providing by means of an electron source (150) electrons as free particles, whereby during the reactant step a closed electrical circuit is formed as the free electrons are transmitted to the substrate (170) surface.

A manufacturing method of a wire grid polarizer is provided, including: setting pattern data, where the pattern data correspond to a wire grid structure of the wire grid polarizer; preparing a metal ion solution; immersing at least one surface of a carrier substrate in the metal ion solution; and emitting, by an emitter device, an electron beam to the carrier substrate, and controlling a movement of the electron beam according to the pattern data to deposit a metal on the carrier substrate at a position where the electron beam passes, to form the wire grid structure.