The invention relates to selective deposition of a nickel layer on a copper surface. The invention may be used in the production of electrically conductive areas for electronic circuits. Method for nickel deposition on the surface of copper comprises immersing an item, which surface is to be deposited with the nickel layer, into one or more baths, of which at least one contains a reducing agent and of which at least one is adapted for (electroless) plating of nickel. In order to extend the field of application and to obtain practically pure nickel coatings, said reducing agent comprises boronic or phosphoric compounds, comprising morpholine borane (C.sub.4H.sub.9BNO), or dimethylamine borane (C.sub.2H.sub.7BN), or sodium tetrahydroborate (NaBH.sub.4), or sodium hypophosphite (NaH.sub.2PO.sub.2) and said reducing agent directly or indirectly reduces insoluble copper (I) or copper (II) compounds on the copper surface. At least one of the mention baths comprises a ligand or mixture thereof.

A surface treatment method for a metal member includes the steps of: (a) imparting a charge to one region of the metal member; and (b) forming a first coating by applying a first coating material to the other region of the metal member, the first coating material containing an insulating resin.

According to the present disclosure, a method for coating nickel on an organosiloxane polymer is provided. A nickel organosiloxane polymer composite is also provided.

A method of preparing a graphene coating on a metal surface, the method includes: pretreating the metal surface of a metal sample; immersing, spraying or hang brushing the metal sample with the pretreated metal surface by using a graphene oxide aqueous solution, so that the grapheme oxide aqueous solution covers inner and outer surfaces of the metal sample; baking and drying the metal sample covered with the graphene oxide aqueous solution; performing a microwave reduction treatment on the baked and dried metal sample; taking out the microwave-reduced metal sample, cleaning the metal sample with a cleaning agent to obtain a metal coated with the graphene coating.

A method for manufacturing a surge absorbing device is provided. The method includes providing an elongate ceramic tube having a hollow space defined therein and having open and opposite first and second end; forming a first plating layer and a second plating layer on the first end and the second end, respectively; placing a surge absorbing element within the hollow space within the ceramic tube; disposing first and second brazing rings on the first plating layer and the second plating layer, respectively; disposing first and second sealing electrodes on the first and second brazing rings respectively; and melting the first and second brazing rings in an inert gas atmosphere to attach the first and second sealing electrodes onto the first plating layer and the second plating layer, respectively.

Provided is a method for producing a wiring structural body provided with a wiring pattern, the method including a first step of forming an insulating layer on a surface of a silicon substrate along at least a region for forming the wiring pattern, a second step of forming a boron layer on the insulating layer along the region, and a third step of forming a metal layer on the boron layer by plating.

Provided is a method for producing a wiring structural body provided with a wiring pattern, the method including a first step of forming an insulating layer on a surface of a silicon substrate along at least a region for forming the wiring pattern, a second step of forming a boron layer on the insulating layer along the region, and a third step of forming a metal layer on the boron layer by plating.

A method of manufacturing a package, comprising embedding the semiconductor chip with an encapsulant comprising a transition metal in a concentration in a range between 10 ppm and 10,000 ppm; selectively converting of a part of the transition metal, such that the electrical conductivity of the encapsulant increases; and plating the converted part of the encapsulant with an electrically conductive material.

Methods for forming thin, pinhole-free conformal metal layers on both conducting and non-conducting surfaces, where the morphology and properties of the metal layers are tuned to meet desired parameters by adjusting the concentration of ionic liquids during the deposition process. The formed metal films contain tunable properties for solar and electronic use and provide specific advantages for non-conducting surfaces, which are otherwise unsuitable for electroplating without the presence of the formed metal films. The disclosed methods do not require the presence of a voltage or external electric field but form the metal films through an electroless technique using electrostatic interactions between negatively charged nanoparticles. In addition, the disclosed methods are compatible with solution phase processing and eliminate the need to transfer the surfaces into a vacuum chamber for a chemical or physical vapor deposition to form a metal layer.

Method for preparing high-strength and durable super-hydrophobic film layer on inner wall of elongated metal tube includes roughening treatment of inner wall of a metal tube, electrodepositing preparation of nickel-phosphorus alloy layer and functional coating, heat treatment, subsequent anodizing and low surface energy modification. The method greatly reduces the influence of local mass transfer resistance, and a uniform nanocrystalline film layer is electroplated under the ultrasound induction. Since only electroplating solution is filled in the tube during the preparation process, the consumption of device and raw materials is greatly reduced. Also, since silica particles are added to the electroplating solution in preparing the nanocrystalline film layer, the surface morphology can be made more uniform and denser in terms of the microscopic morphology. Nano-scale channels structures are etched, so that the super-hydrophobic inner surface can have a better ability to store air, and its water flow impact resistance is greatly enhanced.