The present invention describes a composition and method to control dimensional growth during an anodizing process. Potassium permanganate has been discovered, when added to an anodizing solution containing at least one acid, to minimize dimensional change. This novel composition and method were found to be safer, quicker and less expensive than the conventional method of anodizing aluminum. In addition, the novel composition and method were found to have superior properties to aluminum anodized by the conventional method with respect to durability and corrosion resistance. In addition to anodizing, the novel solution described herein is capable of several other uses including the removal of organic and metal contaminants from solution, producing black electroless nickel on a substrate, producing a bright nickel coating on a substrate such as aluminum, and cleaning and activating aluminum for plating.

The instant disclosure provides a method for manufacturing an electroless plating substrate and a method for forming a metal layer on a surface of a substrate. The method for preparing the electroless plating substrate includes: providing a substrate; attaching a self-adsorbed catalyst composition to a surface of the substrate; and performing an electroless metal deposition for forming an electroless metal layer on the surface of the substrate. The self-adsorbed catalyst composition includes a colloidal nanoparticle and a silane compound. The colloidal nanoparticle includes a palladium nanoparticle and a capping agent enclosing the palladium nanoparticle. The silane compound has at least one amino group to interact with the colloidal nanoparticle. A covalent bond between the silane compound and the surface of the substrate is formed through the at least one silane group of the silane compound. The colloid nanoparticle has a particle size ranging from 5 to 10 nanometers.

A new method capable of forming a circuit by performing metal plating on a desired portion on a substrate through a small number of steps regardless of the kind of the substrate. A method for forming a circuit on a substrate characterized in that when forming a circuit by plating on a substrate, the method includes steps of applying a coating film containing a silicone oligomer and a catalyst metal onto the substrate, and thereafter, performing an activation treatment of the catalyst metal in the coating film to make the catalyst metal exhibit autocatalytic properties, and then, performing electroless plating.

A film formation method is provided with a catalyst film formation step for forming a catalyst film on the surface of a substrate by displacement reduction plating, an intermediate film formation step for forming a palladium plating film on the catalyst film, and a surface film formation step for forming a gold plating film on the palladium plating film.

A patterning process, comprises: (i) forming a radiation-sensitive film on a substrate, wherein the radiation-sensitive film comprises: (a) a resin, (b) a photoacid generator, (c) a first quencher, and (d) a second quencher; (ii) patternwise exposing the radiation-sensitive film to activating radiation; and (iii) contacting the radiation-sensitive film with an alkaline developing solution to form a resist pattern; wherein the resin comprises the following repeat units: ##STR00001##
wherein: R.sub.1 is selected from a hydrogen atom, an alkyl group having from 1 to 4 carbon atoms, a cyano group or a trifluoromethyl group; Z is a non-hydrogen substituent that provides an acid-labile moiety; n is from 40 to 90 mol %; m is from 10 to 60 mol %; and the total combined content of the two repeat units in the resin is 80 mol % or more based on all repeat units of the resin; and the first quencher is selected from benzotriazole or a derivative thereof.

A technology capable of reducing contamination of a semiconductor substrate above which a nickel film is disposed is provided. A semiconductor device includes: a semiconductor substrate; an aluminum alloy film disposed on at least one of a front surface and a back surface of the semiconductor substrate; a catalyst metal film disposed above the aluminum alloy film and exhibiting catalytic activity for autocatalytic reaction that deposits nickel; an electroless nickel plating film disposed on the catalyst metal film; and a reactant layer disposed between the aluminum alloy film and the catalyst metal film and containing metal of the catalyst metal film.

A technology capable of reducing contamination of a semiconductor substrate above which a nickel film is disposed is provided. A semiconductor device includes: a semiconductor substrate; an aluminum alloy film disposed on at least one of a front surface and a back surface of the semiconductor substrate; a catalyst metal film disposed above the aluminum alloy film and exhibiting catalytic activity for autocatalytic reaction that deposits nickel; an electroless nickel plating film disposed on the catalyst metal film; and a reactant layer disposed between the aluminum alloy film and the catalyst metal film and containing metal of the catalyst metal film.

A novel pretreating liquid for electroless plating which is used simultaneously with reduction treatment after roughening treatment of a filler-containing insulating resin substrate. A pretreating liquid for electroless plating is used simultaneously with reduction treatment when an insulating resin substrate containing a filler is roughened and residues generated on the insulating resin substrate are reduced. The pretreating liquid comprises: a reducing agent; and at least one selected from the group consisting of ethylene-based glycol ether represented by CmH(2m+1)-(OC.sub.2H.sub.4)n-OH (m=an integer of 1 to 4, n=an integer of 1 to 4) and propylene-based glycol ether represented by CxH(2x+1)-(OC.sub.3H.sub.6)y-OH (x=an integer of 1 to 4, y= an integer of 1 to 3).

A novel pretreating liquid for electroless plating which is used simultaneously with reduction treatment after roughening treatment of a filler-containing insulating resin substrate. A pretreating liquid for electroless plating is used simultaneously with reduction treatment when an insulating resin substrate containing a filler is roughened and residues generated on the insulating resin substrate are reduced. The pretreating liquid comprises: a reducing agent; and at least one selected from the group consisting of ethylene-based glycol ether represented by CmH(2m+1)-(OC.sub.2H.sub.4)n-OH (m=an integer of 1 to 4, n=an integer of 1 to 4) and propylene-based glycol ether represented by CxH(2x+1)-(OC.sub.3H.sub.6)y-OH (x=an integer of 1 to 4, y= an integer of 1 to 3).

A sealing article includes a body and a coating layer disposed on at least one surface of the body. The body comprises a polymeric elastomer such as perfluoroelastomer or fluoroelastomer. The coating layer comprises at least one metal. The sealing article may be a seal, a gasket, an O-ring, a T-ring or any other suitable product. The sealing article is resistant to ultra-violet (UV) light and plasma, and may be used for sealing a semiconductor processing chamber.