Patent classifications
C23C18/31
Method of producing electroconductive substrate, electronic device and display device
A method of producing an electroconductive substrate including a base material, and an electroconductive pattern disposed on one main surface side of the base material includes: a step of forming a trench including a bottom surface to which a foundation layer is exposed, and a lateral surface which includes a surface of a trench formation layer, according to an imprint method; and a step of forming an electroconductive pattern layer by growing metal plating from the foundation layer which is exposed to the bottom surface of the trench.
Method of producing electroconductive substrate, electronic device and display device
A method of producing an electroconductive substrate including a base material, and an electroconductive pattern disposed on one main surface side of the base material includes: a step of forming a trench including a bottom surface to which a foundation layer is exposed, and a lateral surface which includes a surface of a trench formation layer, according to an imprint method; and a step of forming an electroconductive pattern layer by growing metal plating from the foundation layer which is exposed to the bottom surface of the trench.
Method and apparatus for performing immersion tin process or copper plating process in the production of a component carrier
A method of performing an immersion tin process in the production of a component carrier is provided which includes immersing at least a part of a copper surface of the component carrier in a composition containing Sn(II) in an immersion tin unit, while passing a non-oxidizing gas through the immersion tin unit, wherein at least part of the non-oxidizing gas is recycled. In addition, an apparatus for performing an immersion tin process in the production of a component carrier, a method of performing a copper plating process in the production of a component carrier and an apparatus for performing a copper plating process in the production of a component carrier are provided.
Method and apparatus for performing immersion tin process or copper plating process in the production of a component carrier
A method of performing an immersion tin process in the production of a component carrier is provided which includes immersing at least a part of a copper surface of the component carrier in a composition containing Sn(II) in an immersion tin unit, while passing a non-oxidizing gas through the immersion tin unit, wherein at least part of the non-oxidizing gas is recycled. In addition, an apparatus for performing an immersion tin process in the production of a component carrier, a method of performing a copper plating process in the production of a component carrier and an apparatus for performing a copper plating process in the production of a component carrier are provided.
Device housings with glass beads
In one example, a device housing is described, which may include a base substrate and ion-exchanged glass beads disposed on an outer surface of the base substrate.
Device housings with glass beads
In one example, a device housing is described, which may include a base substrate and ion-exchanged glass beads disposed on an outer surface of the base substrate.
CATALYST FOR HYDROGEN EVOLUTION REACTION AND PREPARING METHOD OF THE SAME
Summary
The present application relates to a catalyst for hydrogen evolution reaction (HER) including a transition metal matrix and noble metal atoms formed in the transition metal matrix, in which the noble metal atoms have oxygen adsorbed thereto, and oxygen is derived from the transition metal matrix.
Method for producing wiring substrate
A seeded substrate is first prepared. The seeded substrate includes an insulation substrate having a main surface composed of a first region and a second region other than the first region, and a conductive seed layer provided on the first region. Subsequently, a conductive layer is formed on at least the second region to obtain a first treated substrate. An insulation layer is then formed on the first treated substrate. The seed layer is then exposed. A metal layer is then formed on the surface of the seed layer. Here, a voltage is applied between the anode and the seed layer while a solid electrolyte membrane containing a metal ion-containing solution being disposed between the second treated substrate and the anode, and the solid electrolyte membrane and the seed layer being pressed into contact with each other. Thereafter, the insulation layer and the conductive layer are removed.
Methods for electropolishing and coating aluminum on air and/or moisture sensitive substrates
Methods for electropolishing and coating aluminum on a surface of an air and/or moisture sensitive substrate, including: in a vessel, submerging the substrate in a first molten salt bath and applying an anodizing current to the substrate at a first temperature to electropolish the surface of the substrate; wherein the first molten salt bath includes one of a first organic salt bath and first inorganic salt bath; wherein, when used, the first organic salt bath includes one of (a) aluminum halide and ionic liquid, (b) a combination of an aluminum halide and halogenatedmethylphenylsulfone (C.sub.6(H.sub.5-y,X.sub.y)SO.sub.2CX.sub.3, where y is a number from 0-5), (c) a combination of an aluminum halide, an ionic liquid, and halogenatedmethylphenylsulfone (C.sub.6(H.sub.5-y,X.sub.y)SO.sub.2CX.sub.3), and (d) AlF.sub.3-organofluoride-hydrofluoric acid adduct; wherein, when used, the first inorganic salt bath includes aluminum halide and alkali metal halide; and wherein the anodizing current is 10-30 mA/cm.sup.2.
Methods for electropolishing and coating aluminum on air and/or moisture sensitive substrates
Methods for electropolishing and coating aluminum on a surface of an air and/or moisture sensitive substrate, including: in a vessel, submerging the substrate in a first molten salt bath and applying an anodizing current to the substrate at a first temperature to electropolish the surface of the substrate; wherein the first molten salt bath includes one of a first organic salt bath and first inorganic salt bath; wherein, when used, the first organic salt bath includes one of (a) aluminum halide and ionic liquid, (b) a combination of an aluminum halide and halogenatedmethylphenylsulfone (C.sub.6(H.sub.5-y,X.sub.y)SO.sub.2CX.sub.3, where y is a number from 0-5), (c) a combination of an aluminum halide, an ionic liquid, and halogenatedmethylphenylsulfone (C.sub.6(H.sub.5-y,X.sub.y)SO.sub.2CX.sub.3), and (d) AlF.sub.3-organofluoride-hydrofluoric acid adduct; wherein, when used, the first inorganic salt bath includes aluminum halide and alkali metal halide; and wherein the anodizing current is 10-30 mA/cm.sup.2.