An electrode for a lithium secondary battery, which may be applied to the lithium secondary battery to increase cycling performance and efficiency of the battery, and a manufacturing method thereof. When the electrode for the lithium secondary battery of the present invention is applied to the lithium secondary battery, uniform deposition and stripping of lithium metals occur throughout the surface of the electrode when charging/discharging the battery, thereby inhibiting uneven growth of lithium dendrites and improving cycle and efficiency characteristics of the battery. Further, the electrode for the lithium secondary battery of the present invention exhibits remarkably high flexibility, as compared with existing electrodes including a metal current collector and an active material layer, thereby improving processability during manufacture of the electrode and assembling the battery.

Metal coated resin particles include: spherical core resin particles; and a metal coated layer provided on a surface of each of the core resin particles, in which the metal coated layer consists of: a first silver layer formed on the surface of each of the core resin particles; a tin intermediate layer consisting of one or more of metallic tin and/or tin compounds selected from the group consisting of tin (Sn), tin oxide (Sn.sub.xO.sub.y), and tin hydroxide (Sn.sub.x(OH).sub.y) formed on a surface of the first silver layer (where, 0.1<x<4, 0.1<y<5); and a second silver layer formed on a surface of the tin intermediate layer.

The present invention provides a carrier-attached copper foil, wherein an ultrathin copper foil is not peeled from the carrier prior to the lamination to an insulating substrate, but can be peeled from the carrier after the lamination to the insulating substrate. A carrier-attached copper foil comprising a copper foil carrier, an intermediate layer laminated on the copper foil carrier, and an ultrathin copper layer laminated on the intermediate layer, wherein the intermediate foil is configured with a Ni layer in contact with an interface of the copper foil carrier and a Cr layer in contact with an interface of the ultrathin copper layer, said Ni layer containing 1,000-40,000 μg/dm.sup.2 of Ni and said Cr layer containing 10-100 μg/dm.sup.2 of Cr is provided.

The present invention provides a carrier-attached copper foil, wherein an ultrathin copper foil is not peeled from the carrier prior to the lamination to an insulating substrate, but can be peeled from the carrier after the lamination to the insulating substrate. A carrier-attached copper foil comprising a copper foil carrier, an intermediate layer laminated on the copper foil carrier, and an ultrathin copper layer laminated on the intermediate layer, wherein the intermediate foil is configured with a Ni layer in contact with an interface of the copper foil carrier and a Cr layer in contact with an interface of the ultrathin copper layer, said Ni layer containing 1,000-40,000 μg/dm.sup.2 of Ni and said Cr layer containing 10-100 μg/dm.sup.2 of Cr is provided.

The invention relates to a thermoplastic polymer composition comprising A. a polyamide B. a reinforcing agent, and C. an laser direct structuring (LDS) additive wherein the polyamide comprises a blend of —(A.1) a semi-crystalline semi-aromatic polyamide, and —(A.2) an amorphous semi-aromatic polyamide or an aliphatic polyamide, or a mixture thereof; or a blend of —(A.3) a semi-crystalline aliphatic polyamide, and —(A.4) an amorphous semi-aromatic polyamide; and D. a metal (di)phosphinate. The present invention further relates an article prepared form the thermoplastic polymer composition, and article made by a LDS process and a process for preparing the same.

The invention relates to a thermoplastic polymer composition comprising A. a polyamide B. a reinforcing agent, and C. an laser direct structuring (LDS) additive wherein the polyamide comprises a blend of —(A.1) a semi-crystalline semi-aromatic polyamide, and —(A.2) an amorphous semi-aromatic polyamide or an aliphatic polyamide, or a mixture thereof; or a blend of —(A.3) a semi-crystalline aliphatic polyamide, and —(A.4) an amorphous semi-aromatic polyamide; and D. a metal (di)phosphinate. The present invention further relates an article prepared form the thermoplastic polymer composition, and article made by a LDS process and a process for preparing the same.

A metal powder in which a coating made of one or more types of elements selected from Gd, Ho, Lu, Mo, Nb, Os, Re, Ru, Tb, Tc, Th, Tm, U, V, W, Y, Zr, Cr, Rh, Hf, La, Ce, Pr, Nd, Pm, Sm and Ti is formed on a surface of a copper or copper alloy powder, wherein a thickness of the coating is 5 nm or more and 500 nm or less. A metal powder for metal additive manufacturing based on the laser method which can be efficiently melted with a laser while maintaining the high conductivity of copper or copper alloy, and a molded object produced by using such metal powder are provided.

A metal powder in which a coating made of one or more types of elements selected from Gd, Ho, Lu, Mo, Nb, Os, Re, Ru, Tb, Tc, Th, Tm, U, V, W, Y, Zr, Cr, Rh, Hf, La, Ce, Pr, Nd, Pm, Sm and Ti is formed on a surface of a copper or copper alloy powder, wherein a thickness of the coating is 5 nm or more and 500 nm or less. A metal powder for metal additive manufacturing based on the laser method which can be efficiently melted with a laser while maintaining the high conductivity of copper or copper alloy, and a molded object produced by using such metal powder are provided.

Provided is a method for manufacturing a semiconductor device that improves the reliability of the semiconductor device under thermal stress and the assembly performance of the semiconductor device in manufacturing steps. The method includes the following: forming a first electrode by depositing a first conductive film onto one main surface of a semiconductor substrate and patterning the first conductive film; forming a first metal film corresponding to a pattern of the first electrode onto the first electrode; forming a second electrode by depositing a second conductive film onto the other main surface of the semiconductor substrate; forming a second metal film thinner than the first metal film onto the second electrode; and collectively forming a third metal film onto each of the first metal film and the second metal film by electroless plating.

Provided is a method for manufacturing a semiconductor device that improves the reliability of the semiconductor device under thermal stress and the assembly performance of the semiconductor device in manufacturing steps. The method includes the following: forming a first electrode by depositing a first conductive film onto one main surface of a semiconductor substrate and patterning the first conductive film; forming a first metal film corresponding to a pattern of the first electrode onto the first electrode; forming a second electrode by depositing a second conductive film onto the other main surface of the semiconductor substrate; forming a second metal film thinner than the first metal film onto the second electrode; and collectively forming a third metal film onto each of the first metal film and the second metal film by electroless plating.