The present invention relates to the lead-zirconate-titanate (PZT) amorphous alloy plating solution which may be used to form a PZT amorphous alloy film having excellent mechanical and physical properties and a method for plating a PZT amorphous alloy using the same. The PZT amorphous alloy plating solution may include a Pb precursor, a Zr precursor, and a Ti precursor. 10˜50 parts by weight of the Zr precursor and 5˜30 parts by weight of the Ti precursor may be included based on 100 parts by weight of the Pb precursor. Accordingly, electrical conductivity can be improved because the PZT amorphous alloy plating solution has a structure which has low crystallinity or which is amorphous. Furthermore, excellent electrical characteristics can be achieved because the PZT amorphous alloy plating solution has excellent conductivity or chemical stability.

The present invention relates to the lead-zirconate-titanate (PZT) amorphous alloy plating solution which may be used to form a PZT amorphous alloy film having excellent mechanical and physical properties and a method for plating a PZT amorphous alloy using the same. The PZT amorphous alloy plating solution may include a Pb precursor, a Zr precursor, and a Ti precursor. 10˜50 parts by weight of the Zr precursor and 5˜30 parts by weight of the Ti precursor may be included based on 100 parts by weight of the Pb precursor. Accordingly, electrical conductivity can be improved because the PZT amorphous alloy plating solution has a structure which has low crystallinity or which is amorphous. Furthermore, excellent electrical characteristics can be achieved because the PZT amorphous alloy plating solution has excellent conductivity or chemical stability.

An electroless copper plating bath for depositing a copper or copper alloy layer on a surface of a substrate, including copper ions; a reducing agent; a complexing agent for copper ions; wherein the bath further includes at least one compound according to formula (1): ##STR00001## in which Z.sup.1 and Z.sup.2 are independently selected from the group consisting of hydrogen; carboxylic acid; carboxylate; sulfonic acid; sulfonate; carboxamide; nitrile; nitro; trialkylammonium; 2-carboxyvinyl; 2-vinylcarboxylate; 2-(trialkylammonium)vinyl; hydroxamic acid; and oxime; provided at least one of Z.sup.1 and Z.sup.2 is not hydrogen; and in which R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are: i. R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are hydrogen; or ii. R.sup.1 with R.sup.2 form together an aromatic ring, R.sup.3 and R.sup.4 are hydrogen; or iii. R.sup.3 with R.sup.4 form together an aromatic ring, R.sup.1 and R.sup.2 are hydrogen; or iv. both R.sup.1 with R.sup.2 and R.sup.3 with R.sup.4 form together an aromatic ring, respectively.

An electroless copper plating bath for depositing a copper or copper alloy layer on a surface of a substrate, including copper ions; a reducing agent; a complexing agent for copper ions; wherein the bath further includes at least one compound according to formula (1): ##STR00001## in which Z.sup.1 and Z.sup.2 are independently selected from the group consisting of hydrogen; carboxylic acid; carboxylate; sulfonic acid; sulfonate; carboxamide; nitrile; nitro; trialkylammonium; 2-carboxyvinyl; 2-vinylcarboxylate; 2-(trialkylammonium)vinyl; hydroxamic acid; and oxime; provided at least one of Z.sup.1 and Z.sup.2 is not hydrogen; and in which R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are: i. R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are hydrogen; or ii. R.sup.1 with R.sup.2 form together an aromatic ring, R.sup.3 and R.sup.4 are hydrogen; or iii. R.sup.3 with R.sup.4 form together an aromatic ring, R.sup.1 and R.sup.2 are hydrogen; or iv. both R.sup.1 with R.sup.2 and R.sup.3 with R.sup.4 form together an aromatic ring, respectively.

Improved termination features for multilayer electronic components are disclosed. Monolithic components are provided with plated terminations whereby the need for typical thick-film termination stripes is eliminated or greatly simplified. Such termination technology eliminates many typical termination problems and enables a higher number of terminations with finer pitch, which may be especially beneficial on smaller electronic components. The subject plated terminations are guided and anchored by exposed internal electrode tabs and additional anchor tab portions which may optionally extend to the cover layers of a multilayer component. Such anchor tabs may be positioned internally or externally relative to a chip structure to nucleate additional metallized plating material. External anchor tabs positioned on top and bottom sides of a monolithic structure can facilitate the formation of wrap-around plated terminations.

Improved termination features for multilayer electronic components are disclosed. Monolithic components are provided with plated terminations whereby the need for typical thick-film termination stripes is eliminated or greatly simplified. Such termination technology eliminates many typical termination problems and enables a higher number of terminations with finer pitch, which may be especially beneficial on smaller electronic components. The subject plated terminations are guided and anchored by exposed internal electrode tabs and additional anchor tab portions which may optionally extend to the cover layers of a multilayer component. Such anchor tabs may be positioned internally or externally relative to a chip structure to nucleate additional metallized plating material. External anchor tabs positioned on top and bottom sides of a monolithic structure can facilitate the formation of wrap-around plated terminations.

A method for making composite structure with porous metal comprising: S20, providing a substrate; S30, fixing a porous metal structure on the substrate to obtain a first middle structure; S40, fixing at least one carbon nanotube structure on the porous metal structure in the first middle structure to obtain a second middle structure; and S50, shrinking the second middle structure to form a composite structure with porous metal.

A method for making composite structure with porous metal comprising: S20, providing a substrate; S30, fixing a porous metal structure on the substrate to obtain a first middle structure; S40, fixing at least one carbon nanotube structure on the porous metal structure in the first middle structure to obtain a second middle structure; and S50, shrinking the second middle structure to form a composite structure with porous metal.

[Object]

To provide a copper clad laminate that is capable of achieving a good volume resistivity at an electroless copper plating layer of a low dielectric resin film while suppressing a transmission loss when being applied to a flexible circuit board, and a method for producing the copper clad laminate.

[Solving Means]

A copper clad laminate of the present invention includes a low dielectric resin film having a relative permittivity of 3.5 or lower and a dissipation factor of 0.008 or lower at a frequency of 10 GHz, and an electroless copper plating layer laminated on at least one surface of the low dielectric resin film. An Ni content in the electroless copper plating layer is 0.01 to 1.2 wt %, and the electroless copper plating layer has a volume resistivity of 6.0 μΩ.Math.cm or lower.

An object of the present invention is to provide a new electroless plating film which can prevent the diffusion of molten solder to a metal material constituting a conductor. The present invention is an electroless Co—W plating film, wherein content of W is in an amount of 35 to 58 mass % and a thickness of the film is 0.05 μm or more.