A method for manufacturing a laminate containing patterned layers to be plated includes a step of preparing a laminate having a substrate having two main surfaces, and layers for forming a layer to be plated, respectively disposed on two main surfaces of the substrate and containing a polymerization initiator, a step of irradiating a layer for forming a layer to be plated in the laminate with light in a patternwise fashion under a predetermined requirement, and a step of removing non-light irradiated regions in the layers for forming a layer to be plated, thereby forming patterned layers to be plated on two main surfaces of the substrate. Also set forth are a touch panel sensor, a touch panel, a laminate containing patterned layers to be plated, and a metal layer-containing laminate.

An electrode for an energy storage device including a Zn layer or Zn alloy layer, a Ni layer, and a Sn layer or Sn alloy layer formed by plating on a connecting terminal part of a positive electrode composed of Al so that the resistance value at the contacting point is reduced and the voltage of the energy storage device can be effectively supplied without any drop. Accordingly, this electrode can be soldered to a Cu negative electrode, which is composed of metal that is different species from Al, through a Sn layer or a Sn alloy layer so that jointing strength of the Al positive electrode and the Cu negative electrode can be enhanced. The contacting area is increased in comparison with the conventional jointing by spot-welding or conventional fastening by a bolt so that the resistance value at the contacting point is reduced.

A plating method includes a preparation process; a first plating process; and a second plating process. In the preparation process, a substrate W having a seed layer 132 of cobalt or a cobalt alloy formed in a recess is prepared. In the first plating process, a displacement plating processing is performed on the substrate W to replace a surface layer of the seed layer 132 with copper by using a first plating liquid L1 containing a copper ion. In the second plating process, after the first plating process, a reduction plating processing is performed on the recess of the substrate W by using a second plating liquid L2 containing a copper ion and a reducing agent.

An aqueous electrolyte for the deposition of a metal layer on a substrate surface as well as a method for the deposition of a metal layer on a substrate surface by which electrolyte and in which method the formation of airborne emissions above the surface of the electrolyte in a plating tank is significantly reduced or more preferably omitted. The aqueous electrolyte composition according to the invention comprises at least one surfactant in a concentration affecting a dynamic surface tension of the composition of 35 mN/m.

An arc-ablation resistant tungsten alloy switch contact and preparation method is disclosed. A contact member has a three-layer structure, wherein a first layer is a hydrophobic rubber layer, a second layer is a sheet metal layer, and a third layer is a tungsten alloy chemical deposition layer. A plating bath adopted in the chemical deposition contains 25-125 g/L soluble tungsten compound, 0-60 g/L soluble compound of a transition metal like ferrum, nickel, cobalt, copper or manganese, and 0-30 g/L soluble compound of tin, stibium, lead or bismuth. When a layered complex of the hydrophobic rubber layer and the sheet metal layer is chemically plated by the plating bath, a tungsten alloy plated layer is selectively deposited on a metal surface, and chemical deposition of the tungsten alloy does not occur on a surface of the hydrophobic rubber fundamentally.

An arc-ablation resistant tungsten alloy switch contact and preparation method is disclosed. A contact member has a three-layer structure, wherein a first layer is a hydrophobic rubber layer, a second layer is a sheet metal layer, and a third layer is a tungsten alloy chemical deposition layer. A plating bath adopted in the chemical deposition contains 25-125 g/L soluble tungsten compound, 0-60 g/L soluble compound of a transition metal like ferrum, nickel, cobalt, copper or manganese, and 0-30 g/L soluble compound of tin, stibium, lead or bismuth. When a layered complex of the hydrophobic rubber layer and the sheet metal layer is chemically plated by the plating bath, a tungsten alloy plated layer is selectively deposited on a metal surface, and chemical deposition of the tungsten alloy does not occur on a surface of the hydrophobic rubber fundamentally.

Tooling apparatus and methods are provided to fabricate semiconductor devices in which controlled thermal annealing techniques are utilized to modulate microstructures of metallic interconnect structures. For example, an apparatus includes a single platform semiconductor processing chamber having first and second sub-chambers. The first sub-chamber is configured to receive a semiconductor substrate comprising a metallization layer formed on a dielectric layer, wherein a portion of the metallization layer is disposed within an opening etched in the dielectric layer, and to form a stress control layer on the metallization layer. The second sub-chamber comprises a programmable hot plate which is configured to perform a thermal anneal process to modulate a microstructure of the metallization layer while the stress control layer is disposed on the metallization layer, and without an air break between the process modules of forming the stress control layer and performing the thermal anneal process.

In a coated particle, a surface of a base material particle is coated with a carbon particle. The carbon particle is produced by disposing an explosive substance with a detonation velocity of 6,300 m/sec or higher in a periphery of a raw material substance containing an aromatic compound having two or less nitro groups, and detonating the explosive substance.

A method of electroless gold plating includes a step of forming an underlying alloy layer on a base material and a step of forming a gold plate layer directly on the underlying alloy layer by electroless reduction plating using a cyanide-free gold plating bath. The underlying alloy layer is formed of an M1-M2-M3 alloy, where M1 is at least one element selected from Ni, Fe, Co, Cu, Zn, where Sn, M2 is at least one element selected from Pd, Re, Pt, Rh, Ag and where Ru, and M3 is at least one element selected from P and B.

A method of electroless gold plating includes a step of forming an underlying alloy layer on a base material and a step of forming a gold plate layer directly on the underlying alloy layer by electroless reduction plating using a cyanide-free gold plating bath. The underlying alloy layer is formed of an M1-M2-M3 alloy, where M1 is at least one element selected from Ni, Fe, Co, Cu, Zn, where Sn, M2 is at least one element selected from Pd, Re, Pt, Rh, Ag and where Ru, and M3 is at least one element selected from P and B.