The present invention relates to an abutment of a dental implant system for connecting a dental implant and a suprastructure, said abutment comprising an abutment basic body extending from an apical end to a coronal end arranged opposite to the apical end. The abutment basic body comprises a dental implant connecting portion facing the apical end and adapted to fit with a corresponding abutment connecting portion of the dental implant and/or an intermediate part to be directly or indirectly connected with the dental implant. It further comprises a support portion facing the coronal end and designed such to allow the suprastructure to be mounted directly or indirectly. According to the invention, the abutment further comprises nanostructures formed on at least a portion of the outer surface of the abutment basic body, said nanostructures extending in at least two dimensions to 200 nm at most.

Methods for selective deposition of silicon oxide films on dielectric surfaces relative to metal surfaces are provided. A metal surface of a substrate may be selectively passivated relative to the dielectric surface, such as with a polyimide layer or thiol SAM. Silicon oxide is selectively deposited on the dielectric surface relative to the passivated metal surface by contacting the dielectric surface with a metal catalyst and a silicon precursor comprising a silanol.

Methods for selective deposition of silicon oxide films on dielectric surfaces relative to metal surfaces are provided. A metal surface of a substrate may be selectively passivated relative to the dielectric surface, such as with a polyimide layer or thiol SAM. Silicon oxide is selectively deposited on the dielectric surface relative to the passivated metal surface by contacting the dielectric surface with a metal catalyst and a silicon precursor comprising a silanol.

A method for treating and phosphatizing a metal board without using acid includes the following steps: performing a degreasing step to remove grease and dirt from a surface of the metal board with a degreasing agent; performing a blast-peening step by blasting and peening polygon blast-peening granules on the metal board through a centrifugal impeller to remove an oxidized layer; performing a washing step to clean remaining powders from the metal board after the blast-peening step; performing a phosphatizing step to form a protective phosphate coating on the metal board; performing another washing step to wash off remaining phosphatizing agents from the metal board; performing a rustproofing step to apply a rustproofing agent on the metal board; and performing a drying step to dry the metal board.

A method for treating and phosphatizing a metal board without using acid includes the following steps: performing a degreasing step to remove grease and dirt from a surface of the metal board with a degreasing agent; performing a blast-peening step by blasting and peening polygon blast-peening granules on the metal board through a centrifugal impeller to remove an oxidized layer; performing a washing step to clean remaining powders from the metal board after the blast-peening step; performing a phosphatizing step to form a protective phosphate coating on the metal board; performing another washing step to wash off remaining phosphatizing agents from the metal board; performing a rustproofing step to apply a rustproofing agent on the metal board; and performing a drying step to dry the metal board.

The present invention relates to a method for adjusting a passivation composition by determining the redox potential of a passivation composition as well as to a method for passivating metallic substrates by treatment with a passivation composition.

A heatable treatment container for receiving a treatment bath for treating a surface of at least one large-format component having a diameter or dimensions in the range of 0.5 m to 12 m includes a container base with a container bottom, a container wall adjoining the container base, a removable lid, and a central heating column. The central heating column extends from the container bottom towards the removable lid or from the removable lid towards the container bottom. In an example embodiment, the central heating column extends from the container bottom over at least 50% of a height of the container wall towards the removable lid. In another example embodiment, the central heating column extends from the removable lid over at least 50% of a height of the container wall towards the container bottom.

A heatable treatment container for receiving a treatment bath for treating a surface of at least one large-format component having a diameter or dimensions in the range of 0.5 m to 12 m includes a container base with a container bottom, a container wall adjoining the container base, a removable lid, and a central heating column. The central heating column extends from the container bottom towards the removable lid or from the removable lid towards the container bottom. In an example embodiment, the central heating column extends from the container bottom over at least 50% of a height of the container wall towards the removable lid. In another example embodiment, the central heating column extends from the removable lid over at least 50% of a height of the container wall towards the container bottom.

Disclosed is a system for maintaining a pretreatment bath containing a pretreatment comprising a Group IVB metal. The system comprises an aqueous reducing agent comprising a metal cation and a latent source of sulfate which, upon reaction with a contaminant in the pretreatment bath, forms a metal sulfate. The contaminant comprises a nitrite source. The metal sulfate salt has a pKsp of 4.5 to 11 at a temperature of 25 C. Also disclosed is a method for maintaining a pretreatment bath containing a pretreatment composition comprising a Group IVB metal. The method comprises supplying the reducing agent to the pretreatment bath in an amount sufficient to reduce a pollution ratio of the pretreatment bath to less than 1:1. Also disclosed are substrates with a pretreatment bath maintained according to the system and method.

A processing system and platform for improving both the microscopic and macroscopic uniformity of materials during etching is disclosed herein. These improvements may be accomplished through the formation and dissolution of thin, self-limiting layers on the material surface by the use of wet atomic layer etching (ALE) techniques. For etching of polycrystalline materials, these self-limiting reactions can be used to prevent this roughening of the surface during etching. Thus, as disclosed herein, a wet ALE process uses sequential, self-limiting reactions to first modify the surface layer of a material and then selectively remove the modified layer.