Provided are a semiconductor material based on metal nanowires and a porous nitride, and a preparation method thereof. The semiconductor material includes: a substrate; a buffer layer formed on the substrate; and a composite material layer formed on the buffer layer the composite material layer includes: a transverse porous nitride template layer; and a plurality of metal nanowires filled in pores of the transverse porous nitride template layer.

There is provided a hot-stamped body including: a steel base metal; and a metallic layer formed on a surface of the steel base metal, wherein the metallic layer includes: an interface layer that contains, in mass %, Al: 30.0 to 36.0%, has a thickness of 100 nm to 15 μm, and is located in an interface between the metallic layer and the steel base metal; and a principal layer that includes coexisting Zn phases and insular FeAl.sub.2 phases, is located on the interface layer, and has a thickness of 1 μm to 40 μm. This hot-stamped body is excellent in fatigue properties, corrosion resistance, and chipping resistance.

A microheater includes a first insulating layer, a first adhesion layer on the first insulating layer, a wiring layer on the first adhesion layer, a second adhesion layer that covers the wiring layer, and a second insulating layer above the first insulating layer and on the second adhesion layer. In the microheater, the wiring layer contains platinum, the first adhesion layer and the second adhesion layer each contain a metal oxide, and the metal oxide has an oxygen-deficient region in which the oxygen is deficient in the stoichiometric ratio of metal to oxygen.

A coated metal alloy substrate, a process for producing a coating a metal alloy substrate, and an electronic device having a housing comprising a coated metal alloy substrate are described. The coated metal alloy substrate comprises a passivation layer deposited on the metal alloy substrate, a porous conductive water borne carbon nanotube layer on the passivation layer, and an electrophoretic deposition layer deposited on the porous conductive water borne carbon nanotube layer.

The present invention addresses the problem of providing, for example, a novel metal surface treatment agent which can form a film capable of maintaining antimicrobial performance on or over a surface of a metal material. The problem can be solved by a metal surface treatment agent containing: a prescribed copolymer (A) obtained by polymerizing a compound (a) represented by the following Formula (1) [in Formula (1), R.sup.1 and R.sup.2 each independently represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, R.sup.3 and R.sup.4 each independently represent an alkyl group having 1 to 5 carbon atoms, and X— represents an ion of a halogen atom, or an acid anion] with a compound (b) represented by the following Formula (2) or (3) [in Formula (2), R.sup.5 represents a hydrogen atom or a methyl group, R.sup.6 and R.sup.7 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a benzyl group, or a hydroxyalkyl group having 2 or 3 carbon atoms; and, in Formula (3), R.sup.8 represents a hydrogen atom or a methyl group]; and a water-soluble or water-dispersible resin (B).

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This disclosure provides systems, methods, and apparatus related to thin free-standing oxide membranes. In one aspect, a method includes providing a substrate. The substrate defines a hole having a diameter of about 500 nanometers to 5000 nanometers. A layer of metal is deposited on the substrate. A supporting layer is deposited on the layer of metal. A first side of the supporting layer is the side that is disposed on the layer of metal. A metal oxide layer is deposited on the first side of the supporting layer and on the substrate. In some implementations, the method further includes removing the supporting layer.

Provided is a multilayer zinc alloy plated steel material comprising a base steel material and multiple plating layers formed on the base steel material, wherein each of the multiple plating layers includes one of a Zn plating layer, a Mg plating layer, and a Zn—Mg alloy plating layer, and the ratio of the weight of Mg contained in the multiple plating layers to the total weight of the multiple plating layers is from 0.13 to 0.24.

A compound semiconductor substrate that can improve in-plane uniformity of current-voltage characteristics in the vertical direction is provided.

A compound semiconductor substrate includes a center and an edge which is 71.2 millimeters away from the center when viewed in a plane. When a film thickness of the GaN layer at the center of the compound semiconductor substrate is W1 and a film thickness of the CaN layer at the edge is W2, film thickness error ΔW represented by ΔW (%)=W1−W2|*100/W1 is greater than 0 and 8% or less. The average carbon concentration in the depth direction at a center of the CaN layer is 3*10.sup.18 pieces/cm.sup.3 or more and 5*10.sup.20 pieces/cm.sup.3 or less. When a carbon concentration at a center position of the depth direction at the center of the GaN layer is concentration C1 and a carbon concentration at a center position of the depth direction at the edge of the GaN layer is concentration C2, concentration error ΔC represented by ΔC (%)=|C1−C2*100/C1 is 0 or more and 50% or less.

A substrate with a multilayer reflection film for an EUV mask blank including a substrate, and a multilayer reflection film formed on the substrate is provided. The multilayer reflection film includes a Si/Mo laminated portion in which Si layers and Mo layers are alternately laminated, and a layer containing Si and N intervenes at one or more portions between the Si layer and the Mo layer of the Si/Mo laminated portion, and is contact with both of the Si layer and the Mo layer.

A decorative radome including a radio-transmissive substrate having a first surface on a first side and a second surface on a second side; and a first surface radio-transmissive decorative coating; methods of manufacturing a PVD coated system include applying a hard coating to the substrate; applying a PVD coating by magnetron sputtering to the substrate; and laser etching one or more of a pattern or a graphic into the PVD coating; and A decorative PVD coated item, comprising: a substrate; a hard coating applied to the substrate; a PVD coating provided on the hard coating and the substrate, wherein the PVD coating is laser etched with one or more of a pattern or a graphic so that the PVD coating is at least partially removed and the pattern or the graphic is revealed as a result of the contrast between the substrate and the PVD coating.