Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.

Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.

Specific organometallic compounds of Formula I: Q.sub.x-Sn-(A.sup.1R.sup.1′.sub.z).sub.4-x or Formula II: Sn(NR.sup.2(CH.sub.2).sub.nA.sup.2).sub.2 useful for the deposition of high purity tin oxide, as well as methods of using such compounds are disclosed. Also disclosed are compositions of organometallic compounds useful for the deposition of high purity tin oxide that in combination improve stability. Also disclosed are processes for dry etching tin oxide with a particular etchant gas and/or a process for dry etching a substrate using a particular etchant gas with a specific additive.

A method of machining a nickel containing alloy gas turbine engine component (34) comprises applying a material removal gas comprising gaseous carbon monoxide at a nickel carbonyl gas forming temperature such as 50 to 60° C. to a surface of the component to form a nickel carbonyl gas, and thereby remove a surface layer from at least part of the component.

A method of machining a nickel containing alloy gas turbine engine component (34) comprises applying a material removal gas comprising gaseous carbon monoxide at a nickel carbonyl gas forming temperature such as 50 to 60° C. to a surface of the component to form a nickel carbonyl gas, and thereby remove a surface layer from at least part of the component.

The invention relates to a method for pickling a turbomachine component (1), comprising the following steps: positioning the component in a closed chamber (2), injecting a gas mixture (3) into the chamber (2), the gas mixture (3) comprising a halogenated gas, heating the chamber (2), the method being characterised in that: the gas mixture further comprises dihydrogen, the heating step is carried out at a temperature higher than 1000° C. and the step of injecting the gas mixture (3) is carried out by circulating through the chamber (2) a flow of gas mixture (3) having a flow rate between 6 and 15 times the volume of the chamber (2) per hour.

A dry etching method which includes a dry etching step in which an etching gas containing a halogen fluoride, which is a compound of bromine or iodine and fluorine, is brought into contact with a member to be etched (12) having an etching object, which is an object to be etched by the etching gas, thereby etching the etching object without using plasma. The etching object contains at least one metal selected from among titanium, indium, and tin. Also disclosed is a production method for manufacturing a semiconductor element using the dry etching method as well as a cleaning method for cleaning an inner surface of a chamber of a semiconductor element manufacturing apparatus using the dry etching method.

Vapor deposition methods for depositing transition metal dichalcogenide (TMDC) films, such as rhenium sulfide thin films, are provided. In some embodiments TMDC thin films are deposited using a deposition cycle in which a substrate in a reaction space is alternately and sequentially contacted with a vapor phase transition metal precursor, such as a transition metal halide, a reactant comprising a reducing agent, such as NH.sub.3 and a chalcogenide precursor. In some embodiments rhenium sulfide thin films are deposited using a vapor phase rhenium halide precursor, a reducing agent and a sulfur precursor. The deposited TMDC films can be etched by chemical vapor etching using an oxidant such as O.sub.2 as the etching reactant and an inert gas such as N.sub.2 to remove excess etching reactant. The TMDC thin films may find use, for example, as 2D materials.

Vapor deposition methods for depositing transition metal dichalcogenide (TMDC) films, such as rhenium sulfide thin films, are provided. In some embodiments TMDC thin films are deposited using a deposition cycle in which a substrate in a reaction space is alternately and sequentially contacted with a vapor phase transition metal precursor, such as a transition metal halide, a reactant comprising a reducing agent, such as NH.sub.3 and a chalcogenide precursor. In some embodiments rhenium sulfide thin films are deposited using a vapor phase rhenium halide precursor, a reducing agent and a sulfur precursor. The deposited TMDC films can be etched by chemical vapor etching using an oxidant such as O.sub.2 as the etching reactant and an inert gas such as N.sub.2 to remove excess etching reactant. The TMDC thin films may find use, for example, as 2D materials.

A film having film continuity can be formed.

There is provided a technique including: preparing a substrate having a metal-containing film formed on a surface thereof; and slimming the metal-containing film by pulse-supplying a halogen-containing gas to the substrate.