Localized excess protons are created with an open-circuit water electrolysis process using a pair of anode and cathode electrodes for a special excess proton production and proton-utilization system to treat a substrate material plate/film by forming and using an excess protons-substrate-hydroxyl anions capacitor-like system. The technology enables protonation and/or proton-driven oxidation of plate/film and/or membrane materials in a pure water environment. The present invention represents a remarkable clean green chemistry technology that does not require the use of any conventional acid chemicals including nitric and sulfuric acids for the said industrial applications. The application of localized excess protons provides a special energy recycling and renewing technology function to extract latent heat including molecular thermal motion energy at ambient temperature for generating local proton motive force (equivalent to Gibbs free energy) to do useful work such as driving ATP synthesis and proton-driven oxidation of certain substrate metal atoms.

The present invention is directed to methods for inhibiting growth of bacteria and to nanometer scale surfaces having antibacterial properties.

The present invention is directed to methods for inhibiting growth of bacteria and to nanometer scale surfaces having antibacterial properties.

An etchant composition includes phosphoric acid and a silane compound represented by the following Chemical Formula 1:

##STR00001## wherein A is an n-valent radical, L is C.sub.1-C.sub.5 hydrocarbylene, R.sup.1 to R.sup.3 are independently hydrogen, hydroxy, hydrocarbyl, or alkoxy, in which R.sup.1 to R.sup.3 exist respectively or are connected to each other by a heteroelement, and n is an integer of 2 to 5.

A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size is increased, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A vapor deposition mask is produced by the steps of preparing a metal plate with a resin layer in which a resin layer is provided on one surface of a metal plate, forming a metal mask with a resin layer by forming a slit that penetrates through only the metal plate, for the metal plate in the metal plate with a resin layer, and thereafter, forming a resin mask by forming openings corresponding to a pattern to be produced by vapor deposition in a plurality of rows lengthwise and crosswise in the resin layer by emitting a laser from the metal mask side.

A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size is increased, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A vapor deposition mask is produced by the steps of preparing a metal plate with a resin layer in which a resin layer is provided on one surface of a metal plate, forming a metal mask with a resin layer by forming a slit that penetrates through only the metal plate, for the metal plate in the metal plate with a resin layer, and thereafter, forming a resin mask by forming openings corresponding to a pattern to be produced by vapor deposition in a plurality of rows lengthwise and crosswise in the resin layer by emitting a laser from the metal mask side.

A method of obtaining multilayer graphene includes the steps of depositing a first graphene monolayer having a protective layer on top thereof, on a sample having a second graphene monolayer grown on a metal foil. The method further includes the steps of attaching to the metal foil at least one second frame, the at least one first frame having a substrate and a thermal release adhesive polymer layer; and removing or detaching the metal foil. Suspended multilayer graphene or the deposited multilayer graphene is obtained by the previous method. A device having suspended multilayer graphene or deposited multilayer graphene is preferably a NEMs or MEMs sensor or a transparent electrode for example for a display or for an organic or inorganic light-emitting diode (OLED/LED).

A method of obtaining multilayer graphene includes the steps of depositing a first graphene monolayer having a protective layer on top thereof, on a sample having a second graphene monolayer grown on a metal foil. The method further includes the steps of attaching to the metal foil at least one second frame, the at least one first frame having a substrate and a thermal release adhesive polymer layer; and removing or detaching the metal foil. Suspended multilayer graphene or the deposited multilayer graphene is obtained by the previous method. A device having suspended multilayer graphene or deposited multilayer graphene is preferably a NEMs or MEMs sensor or a transparent electrode for example for a display or for an organic or inorganic light-emitting diode (OLED/LED).

A method of growing graphene at low temperature on a substrate. The method includes placing a substrate with a layer of cobalt deposited thereon in a plasma enhanced chemical vapor deposition (PECVD) chamber, providing a carbon precursor gas to the PECVD chamber, generating plasma at between about 350 C. and about 800 C. to decompose the carbon precursor gas to thereby deposit carbon atoms on the cobalt layer and enabling a plurality of the carbon atoms to diffuse through the cobalt layer thereby growing graphene on top of the cobalt layer and in between the substrate and the cobalt layer, removing carbon atoms from top of the cobalt layer, and removing the cobalt layer.

A method of growing graphene at low temperature on a substrate. The method includes placing a substrate with a layer of cobalt deposited thereon in a plasma enhanced chemical vapor deposition (PECVD) chamber, providing a carbon precursor gas to the PECVD chamber, generating plasma at between about 350 C. and about 800 C. to decompose the carbon precursor gas to thereby deposit carbon atoms on the cobalt layer and enabling a plurality of the carbon atoms to diffuse through the cobalt layer thereby growing graphene on top of the cobalt layer and in between the substrate and the cobalt layer, removing carbon atoms from top of the cobalt layer, and removing the cobalt layer.