An aqueous solution for surface treatment, for treating a surface of an alloy, the aqueous solution comprising: a copper compound at a copper ion concentration of 20000 ppm or more and 50000 ppm or less; a heterocyclic nitrogen compound at a concentration of 200 ppm or more and 3000 ppm or less; and a halide ion at a concentration of 2000 ppm or more and 70000 ppm or less.

A method of anisotropic etching comprises forming a metal layer above a substrate. A mask layer is formed on the metal layer with openings defined in the mask layer to expose portions of the metal layer. The exposed portions of the metal layer are introduced to an active etchant solution that includes nanoparticles as an insoluble banking agent. In further embodiments, the exposed portions of the metal layer are introduced to a magnetic and/or an electrical field.

A method of anisotropic etching comprises forming a metal layer above a substrate. A mask layer is formed on the metal layer with openings defined in the mask layer to expose portions of the metal layer. The exposed portions of the metal layer are introduced to an active etchant solution that includes nanoparticles as an insoluble banking agent. In further embodiments, the exposed portions of the metal layer are introduced to a magnetic and/or an electrical field.

A touch screen sensor includes a visible light transparent substrate and an electrically conductive micropattern disposed on or in the visible light transparent substrate. The micropattern includes a first region micropattern within a touch sensing area and a second region micropattern. The first region micropattern has a first sheet resistance value in a first direction, is visible light transparent, and has at least 90% open area. The second region micropattern has a second sheet resistance value in the first direction. The first sheet resistance value is different from the second sheet resistance value.

A touch screen sensor includes a visible light transparent substrate and an electrically conductive micropattern disposed on or in the visible light transparent substrate. The micropattern includes a first region micropattern within a touch sensing area and a second region micropattern. The first region micropattern has a first sheet resistance value in a first direction, is visible light transparent, and has at least 90% open area. The second region micropattern has a second sheet resistance value in the first direction. The first sheet resistance value is different from the second sheet resistance value.

A calibration system adapted to calibrate a resistance of an electrical device having a lead wire comprises a resistance detector adapted to detect the resistance of the electrical device, a first container containing an etching solution adapted to etch the lead wire, and a heater configured to heat the electrical device. If a first resistance of the electrical device detected by the resistance detector at a first temperature is within a first predetermined range, the electrical device is heated with the heater to a second temperature higher than the first temperature. A second resistance of the electrical device is detected by the resistance detector at the second temperature. If the second resistance is beyond a second predetermined range, the lead wire is etched by the etching solution to adjust the resistance of the electrical device until the second resistance at the second temperature is within the second predetermined range.

A calibration system adapted to calibrate a resistance of an electrical device having a lead wire comprises a resistance detector adapted to detect the resistance of the electrical device, a first container containing an etching solution adapted to etch the lead wire, and a heater configured to heat the electrical device. If a first resistance of the electrical device detected by the resistance detector at a first temperature is within a first predetermined range, the electrical device is heated with the heater to a second temperature higher than the first temperature. A second resistance of the electrical device is detected by the resistance detector at the second temperature. If the second resistance is beyond a second predetermined range, the lead wire is etched by the etching solution to adjust the resistance of the electrical device until the second resistance at the second temperature is within the second predetermined range.

Formulations for stripping titanium nitride hard mask and removing titanium nitride etch residue comprise an amine salt buffer, a non-ambient oxidizer, and the remaining being liquid carrier includes water and non-water liquid carrier selected from the group consisting of dimethyl sulfone, lactic acid, glycol, and a polar aprotic solvent including but not limited to sulfolanes, sulfoxides, nitriles, formamides and pyrrolidones. The formulations have a pH <4, preferably <3, more preferably <2.5. The aqueous formulations having water as liquid carrier and semi-aqueous formulation having water and non-polar aprotic solvent(s) further contain acidic fluoride. The formulations offer high titanium nitride etch rates while provide excellent compatibility towards W, AlN, AlO, and low k dielectric materials. The formulations may comprise weakly coordinating anions, corrosion inhibitors, and surfactants. Systems and processes use the formulations for stripping titanium nitride hard mask and removing titanium nitride etch residue.

Formulations for stripping titanium nitride hard mask and removing titanium nitride etch residue comprise an amine salt buffer, a non-ambient oxidizer, and the remaining being liquid carrier includes water and non-water liquid carrier selected from the group consisting of dimethyl sulfone, lactic acid, glycol, and a polar aprotic solvent including but not limited to sulfolanes, sulfoxides, nitriles, formamides and pyrrolidones. The formulations have a pH <4, preferably <3, more preferably <2.5. The aqueous formulations having water as liquid carrier and semi-aqueous formulation having water and non-polar aprotic solvent(s) further contain acidic fluoride. The formulations offer high titanium nitride etch rates while provide excellent compatibility towards W, AlN, AlO, and low k dielectric materials. The formulations may comprise weakly coordinating anions, corrosion inhibitors, and surfactants. Systems and processes use the formulations for stripping titanium nitride hard mask and removing titanium nitride etch residue.

An anti-coking nanomaterial based on a stainless steel surface. In percentage by weight, the nanomaterial comprises: 0 to 3% of carbon, 23% to 38% of oxygen, 38% to 53% of chromium, 10% to 35% of ferrum, 0 to 2% of molybdenum, 0 to 4% of nickel, 3.5 to 5% of silicon, 0 to 1% of calcium, and the balance of impurity elements. Also disclosed are a preparation method for the anti-coking nanomaterial, the anti-coking nanomaterial that is based on a stainless steel surface and that is prepared by using the preparation method, and a stainless steel substrate comprising the anti-coking nanocrystalline material.