Cobalt barrier Chemical Mechanical Planarization (CMP) compositions, systems and methods are provided for the removal of cobalt or a cobalt alloy from the surface of a semiconductor device during its manufacture. The compositions use suitable chemical additives selected from the group consisting of an aliphatic organic carboxylic acid, an aromatic organic carboxylic acid, and combinations thereof; abrasives; an oxidizing agent; and an corrosion inhibitor; to provide tunable cobalt film removal rates, tunable selectivity between cobalt and dielectric or other barrier films, and maintain very low static etching rates on cobalt film.

A medical device polishing member and a manufacturing method thereof. The medical device polishing member has a mass loss rate of 20-60% in the polishing process, and has good mechanical properties, surface properties, and biosafety. Further provided is a manufacturing method for the medical device polishing member, and the manufacturing method has the advantages such as high polishing precision, simple and convenient operation, and low costs.

A CMP slurry composition for polishing copper and a copper film polishing method using the same, the CMP slurry composition includes a solvent; an abrasive agent; and a compound including a structural unit represented by Formula 1 or a compound including a structural unit represented by Formula 2, ##STR00001##