A method for the wet-chemical polishing of molded zinc parts, the molded parts being brought in contact with an acid solution and said acid solution containing only sulfuric acid and phosphoric acid as the strong acids.

A chemical mechanical polishing slurry, including silicon dioxide particles, a nitrogen-containing heterocyclic compound having one or more carboxy group(s), and an ethoxylated butoxylated alky alcohol, and use of the chemical mechanical polishing slurry in the polishing silicon oxide, polysilicon, and silicon nitride. Polishing rate for silicon nitride using the polishing slurry is much higher than that for silicon oxide and polysilicon. The polishing slurry can be applied to chemical mechanical polishing in which silicon oxide/polysilicon is used as the stop layer, and can be used to control the amount of oxide and polysilicon removed from the substrate surface during polishing.

Provided are a method for etching a metal or metal oxide without using a reagent, etc., that affects the environment, a method for smoothing a surface of a metal or metal oxide on an atomic level, and a method for patterning on an atomic level. Etching of a metal or metal oxide, or smoothing of a surface of a metal or metal oxide is possible using ozone water in which only ozone is dissolved. Patterning can also be performed by providing a metal that does not dissolve in the ozone water as a resist on a metal or metal oxide that can be etched by ozone water in which only ozone is dissolved, and etching using the ozone water.

Provided are a method for etching a metal or metal oxide without using a reagent, etc., that affects the environment, a method for smoothing a surface of a metal or metal oxide on an atomic level, and a method for patterning on an atomic level. Etching of a metal or metal oxide, or smoothing of a surface of a metal or metal oxide is possible using ozone water in which only ozone is dissolved. Patterning can also be performed by providing a metal that does not dissolve in the ozone water as a resist on a metal or metal oxide that can be etched by ozone water in which only ozone is dissolved, and etching using the ozone water.

There is a formulation and a method for inhibiting carbon-based deposits on metal substrate. The method comprises the use of a formulation comprising at least one oxidizing agent and at least one etchant capable of forming free metal ions from the metal substrate, at least one sequestering agent having a ligand capable of forming a complex with the free metal ions and at least one chelating agent having a ligand capable of complexing with at least one surface metal atom.

There is a formulation and a method for inhibiting carbon-based deposits on metal substrate. The method comprises the use of a formulation comprising at least one oxidizing agent and at least one etchant capable of forming free metal ions from the metal substrate, at least one sequestering agent having a ligand capable of forming a complex with the free metal ions and at least one chelating agent having a ligand capable of complexing with at least one surface metal atom.

A method for chemical processing an internal cavity of an additive manufactured (AM) metal workpiece is disclosed in which a connector is provided in fluid connection with the internal cavity and a chemical polishing solution is flowed through the connector and the internal cavity to process the internal cavity to a desired finish.

An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an ammonium salt represented by Formula 1 below: ##STR00001## wherein: L.sup.1 to L.sup.3 are independently substituted or unsubstituted hydrocarbylene, R.sup.1 to R.sup.4 are independently hydrogen, a substituted or unsubstituted hydrocarbyl group, and X.sup.n− is an n-valent anion, where n is an integer of 1 to 3.

An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an ammonium salt represented by Formula 1 below: ##STR00001## wherein: L.sup.1 to L.sup.3 are independently substituted or unsubstituted hydrocarbylene, R.sup.1 to R.sup.4 are independently hydrogen, a substituted or unsubstituted hydrocarbyl group, and X.sup.n− is an n-valent anion, where n is an integer of 1 to 3.

The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive comprising colloidal silica, (b) a compound of formula (I), (c) a compound of formula (II), (d) hydrogen peroxide, and (e) water, wherein the polishing composition has a pH of about 1 to about 5. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting the substrate with the inventive chemical-mechanical polishing composition.