A fluid composition suitable for chemical mechanical polishing a substrate can in include a multi-valent metal borate, at least one oxidizer, and a solvent. The fluid composition can be essentially free of abrasive particles and may achieve a high material removal rate and excellent surface finish.

The invention relates to a chemical-mechanical polishing composition comprising (a) a first abrasive comprising cationically modified colloidal silica particles, (b) a second abrasive having a Mohs hardness of about 5.5 or more, (c) a cationic polymer, (d) an iron containing activator, (e) an oxidizing agent, and (f) water. The invention also relates to a method of chemically mechanically polishing a substrate, especially a substrate comprising tungsten and barrier layers (e.g., nitrides), with the polishing composition.

The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive comprising colloidal silica, (b) a compound of formula (I), (c) a compound of formula (II), (d) hydrogen peroxide, and (e) water, wherein the polishing composition has a pH of about 1 to about 5. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting the substrate with the inventive chemical-mechanical polishing composition.

A laminate for a see-through electrode includes a transparent base and a metal layer that is provided on at least one of both surfaces of the transparent base. The metal layer has a first surface and a second surface, the first surface facing the transparent base, the second surface being at a side opposite to the first surface. And the second surface has a kurtosis (Rku) ranging from 1.00 to 3.10, inclusive.

According to one embodiment, a method for manufacturing a ceramic circuit board is disclosed. The ceramic circuit board includes a copper plate bonded to at least one surface of a ceramic substrate via a brazing material layer including Ag, Cu, and a reactive metal. The method includes: preparing a ceramic circuit board in which a copper plate is bonded on a ceramic substrate via a brazing material layer, and a portion of the brazing material layer is exposed between a pattern shape of the copper plate; a first chemical polishing process of chemically polishing the portion of the brazing material layer; and a first brazing material etching process of etching the chemically polished portion of the brazing material layer by using an etchant having a pH of 6 or less and including one type or two types selected from hydrogen peroxide and ammonium peroxodisulfate.

The present invention is in the field of chemical cleaning and surface treatments for a stainless steel substrate. In particular, the present invention provides a method, kit and use of specific solutions for removing and preferably preventing the formation of rouging (e.g. class I, II and/or III) on a stainless steel substrate, which may be used as processing station or production unit.

The present invention is in the field of chemical cleaning and surface treatments for a stainless steel substrate. In particular, the present invention provides a method, kit and use of specific solutions for removing and preferably preventing the formation of rouging (e.g. class I, II and/or III) on a stainless steel substrate, which may be used as processing station or production unit.

Techniques for modifying surfaces of electrodes are provided. An electrode surface can be processed by applying an abrasive material or chemical solution to or against the surface to modify the surface to reduce the amount of roughness on, and/or alter the shape of, the surface. The shape of the surface can be altered by rounding or doming the surface. During surface processing, flexible or compressible support material can be applied to the back of an abrasive material, such as sandpaper, to desirably distribute pressure from the support material to the sandpaper and/or mold the shape of the sandpaper to facilitate maintaining desirable contact by the sandpaper on electrode surfaces. With regard to a flexible circuit board on which electrodes are formed, a vacuum chuck component or a temporary abrasive can be used to hold the circuit board in a flat and stationary position during surface processing.

Tungsten (W) chemical mechanical polishing (CMP) compositions and their related methods and systems are disclosed. The compositions comprise iron-ligand complexes or metal-ligand complexes as catalyst to induce the formation of hydroxyl radical to enhance oxidation rates of W film and provide high and tunable W film removal rates. The W chemical mechanical polishing (CMP) compositions can be used in wide pH range, therefore, provide highly tunable W: oxide or barrier layer selectivity. The compositions afford low dishing and low erosion levels.

Providing a copper alloy plate, in which center Mg concentration at a center part in a plate thickness direction 0.1 mass % or more and less than 0.3 mass %, center P concentration is 0.001 mass % or more and 0.2 mass % or less, and the balance is composed of Cu and inevitable impurities; in which surface Mg concentration at a surface is 70% or less of the center Mg concentration; in which a surface layer part defined by a prescribed thickness from the surface has a concentration gradient of Mg of 0.05 mass %/m or more and 5 mass %/m or less increasing from surface toward center part of the plate thickness direction; and in which restraint of color change of the surface and increase of electrical contact resistance, and adhesiveness of a plating film are excellent due to maximum Mg concentration in the surface layer part is 90% of the center Mg concentration.