The present disclosure provides new processes and methods to pre-treat metal surfaces in the back end of line (BEOL) fabrication of integrated circuits (ICs). More specifically, the present disclosure provides selective, self-limiting processes and methods for stripping native oxide surface layers that may form on exposed metal surfaces during processing of ICs. The processes and methods disclosed herein utilize the fundamental concepts of metal complexation to provide a novel solution, which enables native oxide surface layers to be selectively removed from exposed metal films in a self-limiting manner. In particular, the disclosed processes and methods use complexing agents (e.g., ligands) to selectively dissolve native oxide surface layers, without significantly etching or removing the underlying metal film.

The present disclosure provides new processes and methods to pre-treat metal surfaces in the back end of line (BEOL) fabrication of integrated circuits (ICs). More specifically, the present disclosure provides selective, self-limiting processes and methods for stripping native oxide surface layers that may form on exposed metal surfaces during processing of ICs. The processes and methods disclosed herein utilize the fundamental concepts of metal complexation to provide a novel solution, which enables native oxide surface layers to be selectively removed from exposed metal films in a self-limiting manner. In particular, the disclosed processes and methods use complexing agents (e.g., ligands) to selectively dissolve native oxide surface layers, without significantly etching or removing the underlying metal film.

There is provided a cleaning method and a cleaning apparatus capable of removing dirt on electrical contacts, the dirt being unable to be removed with deionized water, without adversely affecting a plating solution and a substrate holder which is a member for holding a substrate.

A cleaning method according to the present disclosure is a cleaning method for a substrate holder having electrical contacts for supplying electric power to a substrate by contacting the substrate to plate the substrate, the method including a cleaning step of cleaning the electrical contacts attached to the substrate holder with a citric acid aqueous solution.

A bonding structure formed on a substrate includes an indium layer and a passivating nickel plating formed on the indium layer. The nickel plating serves to prevent a reaction involving the indium layer.

A method for improving both the microscopic and macroscopic uniformity of materials during etching is disclosed herein. These improvements may be accomplished through the formation and dissolution of thin, self-limiting layers on the material surface by the use of wet atomic layer etching (ALE) techniques. For etching of polycrystalline materials, these self-limiting reactions can be used to prevent this roughening of the surface during etching. Thus, as disclosed herein, a wet ALE process uses sequential, self-limiting reactions to first modify the surface layer of a material and then selectively remove the modified layer.

The present invention is concerned with a superhydrophobic surface arrangement, an article having the same and a method of making same. The arrangement is configured for generating, upon contact by water droplets, pancaking bouncing and reducing liquid contact time. The arrangement has an array of posts residing on a surface and extending from the surface, said posts having an elongate configuration with a base portion at one end and an upper portion at an opposite end. By way of the configuration of the posts and the Weber number the surface arrangement in use pancake bouncing of liquid droplets and reduction of contact time of the liquid droplets are effected.

The present invention is concerned with a superhydrophobic surface arrangement, an article having the same and a method of making same. The arrangement is configured for generating, upon contact by water droplets, pancaking bouncing and reducing liquid contact time. The arrangement has an array of posts residing on a surface and extending from the surface, said posts having an elongate configuration with a base portion at one end and an upper portion at an opposite end. By way of the configuration of the posts and the Weber number the surface arrangement in use pancake bouncing of liquid droplets and reduction of contact time of the liquid droplets are effected.

A method for removing a coating including a rare earth silicate from a substrate including a ceramic or ceramic matrix composite may include contacting a coating comprising a rare earth silicate with a liquid comprising an active species. The active species may include at least one of a mineral acid or a base. The method also may include working the coating to cause removal of at least a portion of the coating.

A method for removing a coating including a rare earth silicate from a substrate including a ceramic or ceramic matrix composite may include contacting a coating comprising a rare earth silicate with a liquid comprising an active species. The active species may include at least one of a mineral acid or a base. The method also may include working the coating to cause removal of at least a portion of the coating.

The present invention belongs to the technical field of solder fluxes, and in particular relates to a water-soluble flux and a copper material pickling method. The water-soluble flux provided by the present invention includes an organic acid, an alcohol ether solvent, and deionized water. The organic acid is used as an active component of the present invention, and under the action of the alcohol ether solvent, oxides and impurities on the surface of a part to be welded can be sufficiently removed, and adhering residue of an acidic substance on the surface of the part to be welded can be reduced. In the process of tin plating of the part to be welded treated by the water-soluble flux provided by the present invention, the splash of tin liquid can be effectively inhibited, and the utilization rate of tin is improved.