The water outlet of a subsystem that includes an ultraviolet oxidation device and the water inlet of each substrate treatment device are connected to each other via a main pipe. A hydrogen peroxide removal device is installed between the ultraviolet oxidation device of the subsystem and a non-regenerative ion-exchange device. In addition, a carbon dioxide supply device is installed at the middle of a pipe that branches from the water outlet of the subsystem to reach the substrate treatment device. According to an aspect, the hydrogen peroxide removal device is filled with a platinum-group metal catalyst. Thus, ultrapure water passed through the ultraviolet oxidation device is used as a base to produce carbonated water in which the concentration of hydrogen peroxide dissolved therein is limited to 2 g/L or less and to which carbon dioxide is added to adjust resistivity to be within the range of 0.03 to 5.0 M.Math.cm.

The water outlet of a subsystem that includes an ultraviolet oxidation device and the water inlet of each substrate treatment device are connected to each other via a main pipe. A hydrogen peroxide removal device is installed between the ultraviolet oxidation device of the subsystem and a non-regenerative ion-exchange device. In addition, a carbon dioxide supply device is installed at the middle of a pipe that branches from the water outlet of the subsystem to reach the substrate treatment device. According to an aspect, the hydrogen peroxide removal device is filled with a platinum-group metal catalyst. Thus, ultrapure water passed through the ultraviolet oxidation device is used as a base to produce carbonated water in which the concentration of hydrogen peroxide dissolved therein is limited to 2 g/L or less and to which carbon dioxide is added to adjust resistivity to be within the range of 0.03 to 5.0 M.Math.cm.

The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of titanium, and a third metal element of chromium or tantalum, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in titanium, and a phase that is rich in the third metal element.

Compositions, methods, and systems permit selectively etching metal oxide from reactor metal parts (e.g., titanium and/or titanium alloys). The etching composition comprises an alkali metal hydroxide and gallic acid. The method is useful for cleaning reaction chambers used in the deposition of metal oxide films such as aluminum oxide.

The invention relates to a solution for etching titanium based materials, comprising from about 27 w % to about 39 w % hydrogen peroxide, from about 0.2 w % to about 0.5 w % potassium hydroxide, and at about 0.002 w % to about 0.02 w % 1,2-Diaminocyclohexane-N,N,N,N Tetra acetic Acid (CDTA), the rest being water, said solution comprising no corrosion inhibitor, and said solution having a pH comprised between about 7 and about 8. The invention further relates to a chemical composition for preparing such a solution by mixing said composition with concentrated hydrogen peroxide, said chemical composition comprising potassium hydroxide from about 5 w % to about 30 w %, C.D.T.A. at a concentration ranging from about 1% to about 5% of the potassium hydroxide concentration, the rest being water. The invention also relates to a method of etching a Titanium, Titanium nitride or Titanium Tungsten barrier layer from a microelectronic device, said method comprising contacting the Titanium, Titanium nitride or Titanium tungsten barrier layer with the solution for a time sufficient to remove the Titanium, Titanium nitride or Titanium tungsten barrier layer.

Disclosed is a method of removing lead materials from an anode for manufacturing copper foil to regenerate the anode. The method includes cleaning solution preparation, anode cleaning and anode washing. The cleaning solution preparation includes preparing a cleaning solution containing an aqueous solution of EDTA and citric acid. The cleaning solution used to perform the anode cleaning has a pH of 7 to 9 and a temperature of 20 to 50? C. The anode cleaning includes cleaning the anode by immersing the anode including the lead materials attached to the surface thereof in the cleaning solution to perform EDTA-Pb chelation. As a result, the transfer of the lead materials from the anode to the cleaning solution means substantial removal of the lead materials from the anode. The anode, from which the lead materials have been removed, is washed using a high-pressure washer.

The present invention relates to a method for the cleaning and/or anti-corrosion pretreatment of a plurality of components in series, in which the components of the series are at least partially composed of zinc-coated (ZM) steel. After a cleaning stage and before further cleaning and/or anti-corrosion pretreatment, the components pass through a treatment stage for improving the wettability of the zinc-coated (ZM) steel surfaces in which at least the surfaces of the zinc-coated (ZM) steel of the components are brought into contact with an aqueous medium which contains at least one builder which is a salt of a Lewis acid-base pair in which the Lewis acid is selected from Li.sup.+, Na.sup.+, K.sup.+, Ca.sup.2+, Mg.sup.2+ or Al.sup.3+, and the Lewis base is selected from anions of a polyprotic Br?nsted acid.

Stripping a metallic bond coat from an article using a wet chemical process. An article removed from service and having a metallic bond coat applied over a surface of its metallic substrate is provided. The metallic bond coat is used to improve the adhesion of a TBC to the article, so grit blasting to first remove any TBC applied over the bond coat and which still remains on the article initially may be required. The bond coated article is then immersed in an acid solution of HCl/H.sub.3PO.sub.4 at a predetermined temperature for a predetermined amount of time, the HCl/H.sub.3PO.sub.4 solution reacting with the bond coat applied over the metallic substrate to form a smut on the surface. The article is then removed from the HCl/H.sub.3PO.sub.4 solution and quickly immersed in a solution of NaOH for a predetermined amount of time to at least partially desmut the surface.

Stripping a metallic bond coat from an article using a wet chemical process. An article removed from service and having a metallic bond coat applied over a surface of its metallic substrate is provided. The metallic bond coat is used to improve the adhesion of a TBC to the article, so grit blasting to first remove any TBC applied over the bond coat and which still remains on the article initially may be required. The bond coated article is then immersed in an acid solution of HCl/H.sub.3PO.sub.4 at a predetermined temperature for a predetermined amount of time, the HCl/H.sub.3PO.sub.4 solution reacting with the bond coat applied over the metallic substrate to form a smut on the surface. The article is then removed from the HCl/H.sub.3PO.sub.4 solution and quickly immersed in a solution of NaOH for a predetermined amount of time to at least partially desmut the surface.

A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.