A method of cleaning a pipeline is performed by introducing a treatment composition comprising a colloidal particle dispersion having inorganic nanoparticles with an average particle size of from 500 nm or less into an interior of a pipeline to be cleaned. A pig or body is passed through the pipeline to spread the composition upon surfaces of the interior of the pipeline. The composition and materials adhering to the surfaces of the interior of the pipeline are removed to facilitate cleaning of the pipeline

A method of cleaning a pipeline is performed by introducing a treatment composition comprising a colloidal particle dispersion having inorganic nanoparticles with an average particle size of from 500 nm or less into an interior of a pipeline to be cleaned. A pig or body is passed through the pipeline to spread the composition upon surfaces of the interior of the pipeline. The composition and materials adhering to the surfaces of the interior of the pipeline are removed to facilitate cleaning of the pipeline.

A method of cleaning a pipeline is performed by introducing a treatment composition comprising a colloidal particle dispersion having inorganic nanoparticles with an average particle size of from 500 nm or less into an interior of a pipeline to be cleaned. A pig or body is passed through the pipeline to spread the composition upon surfaces of the interior of the pipeline. The composition and materials adhering to the surfaces of the interior of the pipeline are removed to facilitate cleaning of the pipeline.

The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.

The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.

A composition for pickling a welded portion and a rust-generated portion according to installation of pipes, structures, plants, and so on formed of stainless steel, and for forming a passive state film thereon is provided. More particularly, the present disclosure relates to a neutral agent for passivating a surface of stainless steel metal in which a neutral agent is obtained by neutralizing a basic aqueous solution to 6.9 pH to 7.1 pH and aerated with carbon dioxide-free air to increase the amount of dissolved oxygen, so that an oxidation reduction potential in a range of 170 mV to 310 mV is obtained.

A composition for pickling a welded portion and a rust-generated portion according to installation of pipes, structures, plants, and so on formed of stainless steel, and for forming a passive state film thereon is provided. More particularly, the present disclosure relates to a neutral agent for passivating a surface of stainless steel metal in which a neutral agent is obtained by neutralizing a basic aqueous solution to 6.9 pH to 7.1 pH and aerated with carbon dioxide-free air to increase the amount of dissolved oxygen, so that an oxidation reduction potential in a range of 170 mV to 310 mV is obtained.

A near neutral pH pickling composition for the removal of oxides from metallic surfaces, including heat treated steel. The pickling composition comprises a) a water-soluble organic or inorganic nitro compound, wherein a central N atom has an oxidation state of 3+; b) a polarizing agent for the nitro compound, wherein the polarizing agent comprises at least one of a phosphonate and a carboxylate; c) a pH buffer, and d) at least one metal complexing agent. The composition is preferably maintained at a pH between about 4.5 and about 7.5. The near neutral pH pickle composition can be used on various metallic surfaces as well as composite surfaces comprising metallic and non-metallic portions.

A near neutral pH pickling composition for the removal of oxides from metallic surfaces, including heat treated steel. The pickling composition comprises a) a water-soluble organic or inorganic nitro compound, wherein a central N atom has an oxidation state of 3+; b) a polarizing agent for the nitro compound, wherein the polarizing agent comprises at least one of a phosphonate and a carboxylate; c) a pH buffer, and d) at least one metal complexing agent. The composition is preferably maintained at a pH between about 4.5 and about 7.5. The near neutral pH pickle composition can be used on various metallic surfaces as well as composite surfaces comprising metallic and non-metallic portions.

A near neutral pH pickling composition for the removal of oxides from metallic surfaces, including heat treated steel. The pickling composition comprises a) a water-soluble organic or inorganic nitro compound, wherein a central N atom has an oxidation state of 3+; b) a polarizing agent for the nitro compound, wherein the polarizing agent comprises at least one of a phosphonate and a carboxylate; c) a pH buffer, and d) at least one metal complexing agent. The composition is preferably maintained at a pH between about 4.5 and about 7.5. The near neutral pH pickle composition can be used on various metallic surfaces as well as composite surfaces comprising metallic and non-metallic portions.