Provided are a dissimilar metal welded body and a method of manufacturing the same, capable of preventing galvanic corrosion in a connection portion between dissimilar metals in the dissimilar metal welded body and of sufficient insulation coating being applied even when the insulation coating is applied to the dissimilar metal welded body. The dissimilar metal welded body includes a first member made of a metal containing aluminum as a main component, a second member made of a metal containing copper as a main component, a welded portion formed by pressure-welding an end face of the first member and an end face of the second member to each other, and a metal film that continuously covers a substantially entire part of the first member and at least a part of the second member. The metal film is a film made of a metal containing copper as a main component.

Provided are a dissimilar metal welded body and a method of manufacturing the same, capable of preventing galvanic corrosion in a connection portion between dissimilar metals in the dissimilar metal welded body and of sufficient insulation coating being applied even when the insulation coating is applied to the dissimilar metal welded body. The dissimilar metal welded body includes a first member made of a metal containing aluminum as a main component, a second member made of a metal containing copper as a main component, a welded portion formed by pressure-welding an end face of the first member and an end face of the second member to each other, and a metal film that continuously covers a substantially entire part of the first member and at least a part of the second member. The metal film is a film made of a metal containing copper as a main component.

A surface-treated copper foil includes a treated surface, where the peak extreme height (Sxp) of the treating surface is 0.4 to 3.0 μm. When the surface-treated copper foil is heated at a temperature of 200° C. for 1 hour, the ratio of the integrated intensity of diffraction peak of (111) plane to the sum of the integrated intensities of diffraction peaks of (111) plane, (200) plane, and (220) plane of the treating surface is at least 60%.

A process for making a carbon nanotube structure includes forming a composite by depositing or growing carbon nanotubes onto a metal substrate, and infusing the carbon nanotubes. In other aspects, a method of making a wire, includes coating carbon nanotubes on a wire, and electroplating the carbon nanotubes. In still other aspects, a method of making a conductor includes growing or depositing vertically aligned carbon nanotubes on a sheet. Yet still, a method of making a cable includes forming multiple composite wires, each composite wire formed by depositing or growing carbon nanotubes onto a metal substrate, and performing a metal infusion of the carbon nanotubes. The method also comprises combining multiple finished composite wires or objects to make large cables or straps.

A process for making a carbon nanotube structure includes forming a composite by depositing or growing carbon nanotubes onto a metal substrate, and infusing the carbon nanotubes. In other aspects, a method of making a wire, includes coating carbon nanotubes on a wire, and electroplating the carbon nanotubes. In still other aspects, a method of making a conductor includes growing or depositing vertically aligned carbon nanotubes on a sheet. Yet still, a method of making a cable includes forming multiple composite wires, each composite wire formed by depositing or growing carbon nanotubes onto a metal substrate, and performing a metal infusion of the carbon nanotubes. The method also comprises combining multiple finished composite wires or objects to make large cables or straps.

An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor; and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydrin). The electrodeposition composition can be used in a process for forming a copper feature over a semiconductor substrate in wafer level packaging to electrodeposit a copper bump or pillar on an underbump structure of a semiconductor assembly.

An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor; and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydrin). The electrodeposition composition can be used in a process for forming a copper feature over a semiconductor substrate in wafer level packaging to electrodeposit a copper bump or pillar on an underbump structure of a semiconductor assembly.

In one example, an electroplating system comprises a first bath reservoir, a second bath reservoir, a clamp, a first anode in the first bath reservoir, a second anode in the second bath reservoir, and a direct current power supply. The first bath reservoir contains a first electrolyte solution that includes an alkaline copper-complexed solution. The second bath reservoir contains a second electrolyte solution that includes an acidic copper plating solution. The direct current power supply generates a first direct current between the clamp and the first anode to electroplate a first copper layer on the cobalt layer of the wafer submerged in the first electrolyte solution. The direct current power supply then generates a second direct current between the clamp and the second anode to electroplate a second copper layer on the first copper layer of the wafer submerged in the second electrolyte solution.

In one example, an electroplating system comprises a first bath reservoir, a second bath reservoir, a clamp, a first anode in the first bath reservoir, a second anode in the second bath reservoir, and a direct current power supply. The first bath reservoir contains a first electrolyte solution that includes an alkaline copper-complexed solution. The second bath reservoir contains a second electrolyte solution that includes an acidic copper plating solution. The direct current power supply generates a first direct current between the clamp and the first anode to electroplate a first copper layer on the cobalt layer of the wafer submerged in the first electrolyte solution. The direct current power supply then generates a second direct current between the clamp and the second anode to electroplate a second copper layer on the first copper layer of the wafer submerged in the second electrolyte solution.

Nanotwinned copper and non-nanotwinned copper may be electroplated to form mixed crystal structures such as 2-in-1 copper via and RDL structures or 2-in-1 copper via and pillar structures. Nanotwinned copper may be electroplated on a non-nanotwinned copper layer by pretreating a surface of the non-nanotwinned copper layer with an oxidizing agent or other chemical reagent. Alternatively, nanotwinned copper may be electroplated to partially fill a recess in a dielectric layer, and non-nanotwinned copper may be electroplated over the nanotwinned copper to fill the recess. Copper overburden may be subsequently removed.