Patent classifications
C25D3/48
Aqueous formulation for creating a layer of gold and silver
The invention relates to a cyanide-free formulation for the electrodeposition of a layer of gold and silver on electrically conductive substrates, wherein the formulation respectively contains a complexing agent from the group of sulfites and thiosulfates and is characterized in that at least one transition metal from the 5th or 6th sub-group is added in the form of the soluble oxygen acid thereof in order to increase the bath stability.
Printed circuit board for memory card
The printed circuit board for the memory card includes an insulating layer; a mounting unit formed on a first surface of the insulating layer and electrically connected to a memory device; a terminal unit formed on a second surface of the insulating layer and electrically connected to electronic apparatuses of an outside; and metal layers formed at the mounting unit and the terminal unit and made of the same material.
Printed circuit board for memory card
The printed circuit board for the memory card includes an insulating layer; a mounting unit formed on a first surface of the insulating layer and electrically connected to a memory device; a terminal unit formed on a second surface of the insulating layer and electrically connected to electronic apparatuses of an outside; and metal layers formed at the mounting unit and the terminal unit and made of the same material.
STABILIZED TRANSIENT LIQUID PHASE METAL BONDING MATERIAL FOR HERMETIC WAFER LEVEL PACKAGING OF MEMS DEVICES
In described examples, a transient liquid phase (TLP) metal bonding material includes a first substrate and a base metal layer. The base metal layer is disposed over at least a portion of the first substrate. The base metal has a surface roughness (Ra) of between about 0.001 to 500 nm. Also, the TLP metal bonding material includes a first terminal metal layer that forms an external surface of the TLP metal bonding material. A metal fuse layer is positioned between the base metal layer and the first terminal metal layer. The TLP metal bonding material is stable at room temperature for at least a predetermined period of time.
Slip ring assembly and components thereof
The lifetime of sliding contact surface(s) of a precious metal or a precious metal alloy can be enhanced by embedding at least one nano-particle in the layer forming the sliding contact surface(s).
Slip ring assembly and components thereof
The lifetime of sliding contact surface(s) of a precious metal or a precious metal alloy can be enhanced by embedding at least one nano-particle in the layer forming the sliding contact surface(s).
SILVER-COATED COPPER POWDER AND METHOD FOR PRODUCING SAME
There is provided a silver-coated copper powder, which has excellent storage stability (reliability), and a method for producing the same. A silver-coated copper powder obtained by coating the surface of a copper powder, which is obtained by the atomizing method or the like, with 5 wt % or more (with respect to the silver-coated copper powder) of a silver containing layer of silver or a silver compound, is added to a gold plating solution, which is a potassium gold cyanide solution (to which at least one of tripotassium citrate monohydrate, anhydrous citric acid and L-aspartic acid is preferably added), to cause 0.01 wt % or more (with respect to the silver-coated copper powder) of gold to be supported on the surface of the copper powder coated with the silver containing layer.
SILVER-COATED COPPER POWDER AND METHOD FOR PRODUCING SAME
There is provided a silver-coated copper powder, which has excellent storage stability (reliability), and a method for producing the same. A silver-coated copper powder obtained by coating the surface of a copper powder, which is obtained by the atomizing method or the like, with 5 wt % or more (with respect to the silver-coated copper powder) of a silver containing layer of silver or a silver compound, is added to a gold plating solution, which is a potassium gold cyanide solution (to which at least one of tripotassium citrate monohydrate, anhydrous citric acid and L-aspartic acid is preferably added), to cause 0.01 wt % or more (with respect to the silver-coated copper powder) of gold to be supported on the surface of the copper powder coated with the silver containing layer.
Method of manufacturing semiconductor device
A false report on appearance inspection of a semiconductor device is prevented by suppressing variation in surface state of an electrodeposited gold electrode. In formation of an electrodeposited gold electrode, an electrodeposited gold electrode comprised of a plurality of electrodeposited gold layers in the stack is formed by alternately repeating a step of performing energization between an anode electrode and a cathode electrode provided in a treatment cup of a plating apparatus to cause crystal growth of an electrodeposited gold layer (energization ON), and a step of performing no energization between the anode electrode and the cathode electrode (energization OFF). Consequently, even if aging variation occurs in composition of the plating solution, variation in surface state of the electrodeposited gold electrode is suppressed, and a surface state with a surface roughness of, for example, about 0.025 rad can be maintained.
Method of manufacturing semiconductor device
A false report on appearance inspection of a semiconductor device is prevented by suppressing variation in surface state of an electrodeposited gold electrode. In formation of an electrodeposited gold electrode, an electrodeposited gold electrode comprised of a plurality of electrodeposited gold layers in the stack is formed by alternately repeating a step of performing energization between an anode electrode and a cathode electrode provided in a treatment cup of a plating apparatus to cause crystal growth of an electrodeposited gold layer (energization ON), and a step of performing no energization between the anode electrode and the cathode electrode (energization OFF). Consequently, even if aging variation occurs in composition of the plating solution, variation in surface state of the electrodeposited gold electrode is suppressed, and a surface state with a surface roughness of, for example, about 0.025 rad can be maintained.