A method for forming a coating on a surface of an airfoil is provided, where the airfoil has a leading edge, a trailing edge, a pressure side, and a suction side. The method can include forming a platinum-group metal layer on the surface of the airfoil along at least a portion of the trailing edge, and forming an aluminide coating over the surface of the airfoil of the leading edge, the trailing edge, the pressure side, and the suction side. The leading edge may be substantially free from any platinum-group metal. The method may further include, prior to forming the aluminide coating, forming a bond coating on the surface of the airfoil along the leading edge, and after forming the aluminide coating, forming a thermal barrier coating over the bond coating. A method is also generally provided for repairing a coating on a surface of an airfoil.

A method for forming a coating on a surface of an airfoil is provided, where the airfoil has a leading edge, a trailing edge, a pressure side, and a suction side. The method can include forming a platinum-group metal layer on the surface of the airfoil along at least a portion of the trailing edge, and forming an aluminide coating over the surface of the airfoil of the leading edge, the trailing edge, the pressure side, and the suction side. The leading edge may be substantially free from any platinum-group metal. The method may further include, prior to forming the aluminide coating, forming a bond coating on the surface of the airfoil along the leading edge, and after forming the aluminide coating, forming a thermal barrier coating over the bond coating. A method is also generally provided for repairing a coating on a surface of an airfoil.

A method for microstructure modification of conducting lines is provided. An electroplating process is performed to deposit the metal thin film/conducting line(s) with a face-centered cubic (FCC) structure and a preferred crystallographic orientation over a surface of a substrate. The metal thin film/conducting line(s) is subsequently subjected to a thermal annealing process to modify its microstructure with the grain sizes in a range of 5 μm to 100 μm. The thermal annealing process is conducted at the temperature of above 25 degrees Celsius and below 240 degrees Celsius.

There are provided a press-fit terminal which has an excellent whisker resistance and a low inserting force, is unlikely to cause shaving of plating when the press-fit terminal is inserted into a substrate, and has a high heat resistance, and an electronic component using the same. A press-fit terminal comprises: a female terminal connection part provided at one side of an attached part to be attached to a housing; and a substrate connection part provided at the other side and attached to a substrate by press-fitting the substrate connection part into a through-hole formed in the substrate. At least the substrate connection part has the surface structure described below, and the press-fit terminal has an excellent whisker resistance. The surface structure comprises: an A layer formed as an outermost surface layer and formed of Sn, In, or an alloy thereof; a B layer formed below the A layer and constituted of one or two or more selected from the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os, and Ir; and a C layer formed below the B layer and constituted of one or two or more selected from the group consisting of Ni, Cr, Mn, Fe, Co, and Cu. The A layer has a thickness of 0.002 to 0.2 μm. The B layer has a thickness of 0.001 to 0.3 μm. The C layer has a thickness of 0.05 μm or larger.

There are provided a press-fit terminal which has an excellent whisker resistance and a low inserting force, is unlikely to cause shaving of plating when the press-fit terminal is inserted into a substrate, and has a high heat resistance, and an electronic component using the same. A press-fit terminal comprises: a female terminal connection part provided at one side of an attached part to be attached to a housing; and a substrate connection part provided at the other side and attached to a substrate by press-fitting the substrate connection part into a through-hole formed in the substrate. At least the substrate connection part has the surface structure described below, and the press-fit terminal has an excellent whisker resistance. The surface structure comprises: an A layer formed as an outermost surface layer and formed of Sn, In, or an alloy thereof; a B layer formed below the A layer and constituted of one or two or more selected from the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os, and Ir; and a C layer formed below the B layer and constituted of one or two or more selected from the group consisting of Ni, Cr, Mn, Fe, Co, and Cu. The A layer has a thickness of 0.002 to 0.2 μm. The B layer has a thickness of 0.001 to 0.3 μm. The C layer has a thickness of 0.05 μm or larger.

A cathode material comprising a titanium sheet and platinum, the platinum being in the form of nanoparticles deposited on at least one side of the titanium sheet, to form a decoration thereon, and processes for the preparation thereof.

A cathode material comprising a titanium sheet and platinum, the platinum being in the form of nanoparticles deposited on at least one side of the titanium sheet, to form a decoration thereon, and processes for the preparation thereof.

An article includes a substrate formed of a molybdenum-based alloy. The molybdenum-based alloy has a composition that includes molybdenum, silicon, and boron. A barrier layer is disposed on the substrate. The barrier layer is formed of at least one noble metal.

An article includes a substrate formed of a molybdenum-based alloy. A barrier layer is disposed on the substrate. The barrier layer is formed of at least one noble metal.

An article includes a substrate formed of a molybdenum-based alloy. A barrier layer is disposed on the substrate. The barrier layer is formed of at least one noble metal.