A terminal material having a base material in which at least a surface is made of Cu or Cu alloy; an Ni layer with at thickness of 0.1 μm to 1.0 μm inclusive on the base material; a Cu—Sn intermetallic compound layer with a thickness of 0.2 μm to 2.5 μm inclusive on the Ni layer; and an Sn layer with a thickness of 0.5 μm to 3.0 μm inclusive on the Cu—Sn intermetallic compound layer, when cross sections of the Cu—Sn intermetallic compound layer and the Sn layer are analyzed by the EBSD method with a measuring step 0.1 μm and a boundary in which misorientation between adjacent pixels is 2° or more is deemed to be a crystal boundary, an average crystal grain size Dc of the Cu—Sn intermetallic compound layer is 0.5 μm or more, and a grain size ratio Ds/Dc is five or less.

A terminal material having a base material in which at least a surface is made of Cu or Cu alloy; an Ni layer with at thickness of 0.1 μm to 1.0 μm inclusive on the base material; a Cu—Sn intermetallic compound layer with a thickness of 0.2 μm to 2.5 μm inclusive on the Ni layer; and an Sn layer with a thickness of 0.5 μm to 3.0 μm inclusive on the Cu—Sn intermetallic compound layer, when cross sections of the Cu—Sn intermetallic compound layer and the Sn layer are analyzed by the EBSD method with a measuring step 0.1 μm and a boundary in which misorientation between adjacent pixels is 2° or more is deemed to be a crystal boundary, an average crystal grain size Dc of the Cu—Sn intermetallic compound layer is 0.5 μm or more, and a grain size ratio Ds/Dc is five or less.

A catalyst for decomposition of hydrocarbons that is hard to cause deterioration of catalytic properties and suitable for producing hydrogen in a highly efficient manner for a long period is provided. The catalyst for the decomposition of hydrocarbons includes a nickel-containing layer exposed on a support layer selected from the group consisting of iron, cast iron, steel, copper, nickel, copper alloy, and iron nickel alloy. The catalyst for decomposition of hydrocarbons is produced by contacting a raw material of the catalyst with methane gas at an elevated temperature of 800° C. for 4 to 72 hours with an average residence time beyond 14 minutes. The catalyst further includes an interlayer comprising copper between the support layer and the nickel-containing layer, or the support layer is copper or copper alloy.

A microelectronic device has bump bond structures on input/output (I/O) pads. The bump bond structures include copper-containing pillars, a barrier layer including cobalt and zinc on the copper-containing pillars, and tin-containing solder on the barrier layer. The barrier layer includes 0.1 weight percent to 50 weight percent cobalt and an amount of zinc equivalent to a layer of pure zinc 0.05 microns to 0.5 microns thick. A lead frame has a copper-containing member with a similar barrier layer in an area for a solder joint. Methods of forming the microelectronic device are disclosed.

A microelectronic device has bump bond structures on input/output (I/O) pads. The bump bond structures include copper-containing pillars, a barrier layer including cobalt and zinc on the copper-containing pillars, and tin-containing solder on the barrier layer. The barrier layer includes 0.1 weight percent to 50 weight percent cobalt and an amount of zinc equivalent to a layer of pure zinc 0.05 microns to 0.5 microns thick. A lead frame has a copper-containing member with a similar barrier layer in an area for a solder joint. Methods of forming the microelectronic device are disclosed.

An electrolytic copper foil includes a raw foil layer having a first surface and a second surface opposite to the first surface. In the X-ray diffraction spectrum of the first surface, a ratio of the diffraction peak intensity I(200) of the (200) crystal face of the first surface relative to the diffraction peak intensity I(111) of the (111) crystal face of the first surface is between 0.5 and 2.0. In the X-ray diffraction spectrum of the second surface, a ratio of the diffraction peak intensity I(200) of the (200) crystal face of the second surface relative to the diffraction peak intensity I(111) of the (111) crystal face of the second surface is also between 0.5 and 2.0. A method for producing the electrolytic copper foil, and a lithium ion secondary battery is also provided.

A method for electro-depositing a radioactive material onto a metal substrate is disclosed. This is particularly well-suited for true random number generators. The method includes (a) at least partially masking the metal substrate to expose a metallic surface on the metal substrate; (b) connecting the metal substrate to a cathode of a current source; (c) submersing the exposed metallic surface into a solution containing radioactive metal ions, wherein the solution is connected to an anode of the current source; (d) removing the exposed metallic surface from the solution; (e) removing the solution from the exposed metallic surface; (f) measuring the amount of radioactivity emitted from the exposed metallic surface; and (g) repeating steps (c) through (f) until the amount of radioactivity measured in step (f) is stabilized relative to a previous measurement.

A method for electro-depositing a radioactive material onto a metal substrate is disclosed. This is particularly well-suited for true random number generators. The method includes (a) at least partially masking the metal substrate to expose a metallic surface on the metal substrate; (b) connecting the metal substrate to a cathode of a current source; (c) submersing the exposed metallic surface into a solution containing radioactive metal ions, wherein the solution is connected to an anode of the current source; (d) removing the exposed metallic surface from the solution; (e) removing the solution from the exposed metallic surface; (f) measuring the amount of radioactivity emitted from the exposed metallic surface; and (g) repeating steps (c) through (f) until the amount of radioactivity measured in step (f) is stabilized relative to a previous measurement.

A tin-plated copper terminal material in which on a substrate made of copper or copper alloy, a nickel-or-nickel-alloy layer, a copper-tin alloy layer, and a tin layer are laminated in this order; in this material, the tin layer has an average thickness 0.2 μm to 1.2 μm inclusive; the copper-tin alloy layer is a compound alloy layer in which Cu.sub.6Sn.sub.5 is a main ingredient and part of copper in the Cu.sub.6Sn.sub.5 is substituted with nickel, and an average crystal grain size is 0.2 μm to 1.5 μm inclusive; part of the copper-tin alloy layer appears on a surface of the tin layer and tin solidification parts exist like islands; and the tin solidification parts have an average diameter 10 μm to 1000 μm inclusive in a direction along the surface of the tin layer and an area ratio to the surface of the tin layer 1% to 90% inclusive.

A tin-plated copper terminal material in which on a substrate made of copper or copper alloy, a nickel-or-nickel-alloy layer, a copper-tin alloy layer, and a tin layer are laminated in this order; in this material, the tin layer has an average thickness 0.2 μm to 1.2 μm inclusive; the copper-tin alloy layer is a compound alloy layer in which Cu.sub.6Sn.sub.5 is a main ingredient and part of copper in the Cu.sub.6Sn.sub.5 is substituted with nickel, and an average crystal grain size is 0.2 μm to 1.5 μm inclusive; part of the copper-tin alloy layer appears on a surface of the tin layer and tin solidification parts exist like islands; and the tin solidification parts have an average diameter 10 μm to 1000 μm inclusive in a direction along the surface of the tin layer and an area ratio to the surface of the tin layer 1% to 90% inclusive.