A method of making an electrical component includes transmitting electrical energy from a power source through one or more deposition anodes, through an electrolyte solution, and to an intralayer electrical-connection feature of a build plate, such that material is electrochemically deposited onto the intralayer electrical-connection feature and forms an interlayer electrical-connection feature. The method also includes securing a dielectric material so that the dielectric material contacts and electrically insulates the intralayer electrical-connection feature and contacts and at least partially electrically insulates the interlayer electrical-connection feature. The method additionally includes depositing a seed layer onto the dielectric material and the interlayer electrical-connection feature, electrochemically depositing material onto the seed layer, to form at least one second intralayer electrical-connection feature of the electrical component, and removing any one or more portions of the seed layer onto which no portion of the at least one second intralayer electrical-connection feature is formed.

A high resistance virtual anode for an electroplating cell includes a first layer and a second layer. The first layer includes a plurality of first holes through the first layer. The second layer is over the first layer and includes a plurality of second holes through the second layer.

In one implementation a cathode for electrochemical metal removal has a generally disc-shaped body and a plurality of channels in the generally disc-shaped body, where the channels are configured for passing electrolyte through the body of the cathode. The channels may be fitted with non-conductive (e.g., plastic) tubes that in some embodiments extend above the body of the cathode to a height of at least 1 cm. The cathode may also include a plurality of indentations at the edge to facilitate electrolyte flow at the edge of the cathode. In some embodiments the cathode includes a plurality of non-conductive fixation elements on a conductive surface of the cathode, where the fixation elements are attachable to one or more handles for removing the cathode from the electrochemical metal removal apparatus.

An electrochemical deposition system for depositing metal onto a workpiece, comprises a deposition chamber adapted to receive plating solution, a workpiece holder for holding a workpiece in a first plane, a shield holder for holding a shield in a second plane substantially parallel to the first plane, an agitation plate having a profiled surface to agitate plating solution, wherein the workpiece holder, shield holder and agitation plate are all adapted for insertion into and removal from the deposition chamber, and further comprising an actuator operable to change a relative distance between the workpiece holder and shield holder, in a direction normal to the first and second planes, while they are located within the deposition chamber.

An electroplating apparatus includes: an electroplating bath including an anode region, in which an anode electrode is arranged, a cathode region and a membrane; a head unit including a contact ring holding a wafer and configured so that a first cathode potential is applied to the contact ring during an electroplating process; a reverse potential electrode arranged adjacent to the membrane and configured so that a second cathode potential is applied to the reverse potential electrode during the electroplating process, and a reverse cathode potential is applied to the reverse potential electrode during a rinsing process, and a power supply unit configured to apply the first cathode potential and the second cathode potential during the electroplating process, and further configured to apply the reverse cathode potential and a reverse anode potential to the anode electrode during the rinsing process.

According to one embodiment, there is provided a method for manufacturing a semiconductor device. The method includes metal electroplating on a surface of a first electrode formed on a first surface of a semiconductor substrate with a plating solution which contains aggregates of a supercritical fluid and a solution of a plating metal ion and an electrolyte. The first surface includes a recess. The surface is along with a shape of the recess. The recess has a first dimension and a second dimension, and assuming that an aspect ratio of the recess is given as a ratio of the second dimension to the first dimension, a median of a particle size distribution of the aggregates is greater than the first dimension.

Disclosed herein is a composition for copper bump electrodeposition including copper ions and at least one additive including a polyalkyleneimine backbone including N-hydrogen atoms, where (a) the polyalkyleneimine backbone has a mass average molecular weight Mw of from 900 g/mol to 100 000 g/mol, (b) the N-hydrogen atoms are each substituted by a C2 to C6 polyoxyalkylene group, and (c) the average number of oxyalkylene units in the polyoxyalkylene group is from more than 10 to less than 30 per N-hydrogen atoms in the polyalkyleneimine.

A method for performing an electrochemical plating (ECP) process includes contacting a surface of a substrate with a plating solution comprising ions of a metal to be deposited, electroplating the metal on the surface of the substrate, in situ monitoring a plating current flowing through the plating solution between an anode and the substrate immersed in the plating solution as the ECP process continues, and adjusting a composition of the plating solution in response to the plating current being below a critical plating current such that voids formed in a subset of conductive lines having a highest line-end density among a plurality of conductive lines for a metallization layer over the substrate are prevented.

A method of making an assembly can include juxtaposing a top surface of a first electrically conductive element at a first surface of a first substrate with a top surface of a second electrically conductive element at a major surface of a second substrate. One of: the top surface of the first conductive element can be recessed below the first surface, or the top surface of the second conductive element can be recessed below the major surface. Electrically conductive nanoparticles can be disposed between the top surfaces of the first and second conductive elements. The conductive nanoparticles can have long dimensions smaller than 100 nanometers. The method can also include elevating a temperature at least at interfaces of the juxtaposed first and second conductive elements to a joining temperature at which the conductive nanoparticles can cause metallurgical joints to form between the juxtaposed first and second conductive elements.

Exemplary thermoelectric devices and methods are disclosed herein. Thermoelectric generator performance is increased by the shaping isothermal fields within the bulk of a thermoelectric pellet, resulting in an increase in power output of a thermoelectric generator module. In one embodiment, a thermoelectric device includes a pellet comprising a semiconductor material, a first metal layer surrounding a first portion of the pellet, and a second metal layer surrounding a second portion of the pellet. The first and second metal layers are configured proximate to one another about a perimeter of the pellet. The pellet is exposed at the perimeter. And the perimeter is configured at a sidewall height about the pellet to provide a non-linear effect on a power output of the thermoelectric device by modifying an isotherm surface curvature within the pellet. The device also includes a metal container thermally and electrically bonded to the pellet.