The present invention provides a novel method for producing a laminate to be used as a light-transmissive electrode layer and an N-type semiconductor layer of a wet or solid-state dye-sensitized solar cell comprising a light-transmissive electrode layer, an N-type semiconductor layer, a P-type semiconductor layer, and a facing electrode in this order. In said method, a member to be used as the light-transmissive electrode layer is cathode-polarized in a treatment solution containing a Ti component so as to form a titanium oxide layer to be used as the N-type semiconductor layer on said member.

The present disclosure generally relates to a method for electroplating (or electrodeposition) a transition metal oxide composition that may be used in gas sensors, biological cell sensors, supercapacitors, catalysts for fuel cells and metal air batteries, nano and optoelectronic devices, filtration devices, structural components, and energy storage devices. The method includes electrodepositing the electrochemically active transition metal oxide composition onto a working electrode in an electrodeposition bath containing a molten salt electrolyte and a transition metal ion source. The electrode structure can be used for various applications such as electrochemical energy storage devices including high power and high-energy primary or secondary batteries.

The present disclosure generally relates to a method for electroplating (or electrodeposition) a transition metal oxide composition that may be used in gas sensors, biological cell sensors, supercapacitors, catalysts for fuel cells and metal air batteries, nano and optoelectronic devices, filtration devices, structural components, and energy storage devices. The method includes electrodepositing the electrochemically active transition metal oxide composition onto a working electrode in an electrodeposition bath containing a molten salt electrolyte and a transition metal ion source. The electrode structure can be used for various applications such as electrochemical energy storage devices including high power and high-energy primary or secondary batteries.

To provide a Sn-based plated steel sheet capable of exhibiting superior corrosion resistance, yellowing resistance, coating film adhesiveness, and sulphide stain resistance without using a chromate film. A Sn-based plated steel sheet of the present invention includes: a steel sheet; a Sn-based plating layer located on at least one surface of the steel sheet; and a coating layer located on the Sn-based plating layer, wherein the Sn-based plating layer contains 1.0 g/m.sup.2 to 15.0 g/m.sup.2 of Sn per side in terms of metal Sn, the coating layer contains zirconium oxide, and a content of the zirconium oxide is 1.0 mg/m.sup.2 to 10.0 mg/m.sup.2 per side in terms of metal Zr, the zirconium oxide includes zirconium oxide with an amorphous structure, and a crystalline layer whose main component is zirconium oxide with a crystalline structure is present on an upper layer of the zirconium oxide with the amorphous structure.

A method for preparing organic-inorganic hybrid nanoflower by electrodeposition is provided, which relates to the technical field of enzyme immobilization. An aqueous solution of a rare earth nitrate is mixed with a biological enzyme and a nitrate to obtain a mixed solution; the rare earth ions in the rare earth nitrate are one or more selected from La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb and Y ions; the biological enzyme is α-amylase, horseradish peroxidase or laccase; then, the mixed solution is electrodeposited with a three-electrode system consisting of a working electrode, a counter electrode and a reference electrode to obtain an electrodeposited film on the surface of the working electrode; thereafter, the electrodeposited film is washed and dried successively to obtain organic-inorganic hybrid nanoflower.

A Sn-plated steel sheet including a base plated steel sheet having a steel sheet, a Sn-plated layer on at least one surface of the steel sheet, and a film layer containing a zirconium oxide and a tin oxide. An adhesion amount of Sn per surface of the Sn-plated steel sheet is 0.1 g/m.sup.2 or more and 15 g/m.sup.2 or less, an amount of the zirconium oxide in the film layer is in a range of 1 mg/m.sup.2 or more and 30 mg/m.sup.2 or less in terms of an amount of metal Zr, a peak position of a binding energy of Sn3d.sub.5/2 of the tin oxide is 1.4 eV or more and less than 1.6 eV from a peak position of a binding energy of metal Sn, and a quantity of electricity required for reduction of the tin oxide is more than 5.0 mC/cm.sup.2 and 20 mC/cm.sup.2 or less.

A Sn-plated steel sheet including a base plated steel sheet having a steel sheet, a Sn-plated layer on at least one surface of the steel sheet, and a film layer containing a zirconium oxide and a tin oxide. An adhesion amount of Sn per surface of the Sn-plated steel sheet is 0.1 g/m.sup.2 or more and 15 g/m.sup.2 or less, an amount of the zirconium oxide in the film layer is in a range of 1 mg/m.sup.2 or more and 30 mg/m.sup.2 or less in terms of an amount of metal Zr, a peak position of a binding energy of Sn3d.sub.5/2 of the tin oxide is 1.4 eV or more and less than 1.6 eV from a peak position of a binding energy of metal Sn, and a quantity of electricity required for reduction of the tin oxide is more than 5.0 mC/cm.sup.2 and 20 mC/cm.sup.2 or less.

The present invention relates to the technical field of wastewater treatment, and discloses a method for enhanced bio-treatment of refractory organic pollutants with photo-excited holes as electron acceptors. The method comprises the following steps: 1) placing a composite semiconductor-coated carrier material into a reactor, introducing wastewater into the reactor inoculated with anaerobic sludge, and allowing the composite semiconductor-coated carrier material to be immersed in the wastewater, wherein the composite semiconductor-coated carrier material comprises a conductive carrier and composite semiconductor materials loaded on the conductive carrier; 2) carrying out habituated culture on the anaerobic sludge for a period of time, and loading a biological membrane on the surface of the composite semiconductor materials, to construct a photo-excited hole enhanced bioreactor; and 3) treating the refractory pollutants in the wastewater by utilizing the reactor under irradiation.

The present invention relates to the technical field of wastewater treatment, and discloses a method for enhanced bio-treatment of refractory organic pollutants with photo-excited holes as electron acceptors. The method comprises the following steps: 1) placing a composite semiconductor-coated carrier material into a reactor, introducing wastewater into the reactor inoculated with anaerobic sludge, and allowing the composite semiconductor-coated carrier material to be immersed in the wastewater, wherein the composite semiconductor-coated carrier material comprises a conductive carrier and composite semiconductor materials loaded on the conductive carrier; 2) carrying out habituated culture on the anaerobic sludge for a period of time, and loading a biological membrane on the surface of the composite semiconductor materials, to construct a photo-excited hole enhanced bioreactor; and 3) treating the refractory pollutants in the wastewater by utilizing the reactor under irradiation.

Disclosed is a solution composition which may be used for a single-bath electrochemical passivation and a method using the same. The solution composition includes a metal cation, a metal-oxide anion; and an organic ligand, and optionally includes a non-metallic oxide anion or a polymer. The solution composition may prevent undesired precipitation of metal oxides before performing passivation. In addition, the method of passivation using the solution composition in a single-bath use is also provided.