A method for manufacturing an electronic component package. The method includes (i) providing a package precursor in which an electronic component is embedded such that an electrode of the electronic component is exposed at a surface of a sealing resin layer; (ii) forming a first metal plating layer such that the first metal plating layer is in contact with the exposed surface of the electrode of the electronic component; (iii) disposing a metal foil in face-to-face spaced relationship with respect to the first metal plating layer; and (iv) forming a second metal plating layer. In step (iv), the second metal plating layer is formed so as to fill a clearance between the first metal plating layer and the metal foil, thereby integrating the metal foil, the first metal plating layer and the second metal plating layer with each other.

The present disclosure provides a method of anodizing a surface of a semiconductor device comprising a p-n junction. The method comprises exposing a first surface portion of the semiconductor device to an electrolytic solution that is suitable for anodizing the first surface portion when an electrical current is directed through a region at the first surface portion. Further, the method comprises exposing a portion of the semiconductor device to electromagnetic radiation in a manner such that the electromagnetic radiation induces the electrical current and the first surface portion anodizes.

The present disclosure provides a method of anodizing a surface of a semiconductor device comprising a p-n junction. The method comprises exposing a first surface portion of the semiconductor device to an electrolytic solution that is suitable for anodizing the first surface portion when an electrical current is directed through a region at the first surface portion. Further, the method comprises exposing a portion of the semiconductor device to electromagnetic radiation in a manner such that the electromagnetic radiation induces the electrical current and the first surface portion anodizes.

According to one embodiment, a pattern transfer device includes a substrate, a transfer unit and a controller. The transfer unit is configured to have electrodes and transfer a pattern corresponding to the electrodes with a voltage applied between the substrate and the electrodes. The controller is configured to control humidity between the substrate and the transfer unit.

According to one embodiment, a pattern transfer device includes a substrate, a transfer unit and a controller. The transfer unit is configured to have electrodes and transfer a pattern corresponding to the electrodes with a voltage applied between the substrate and the electrodes. The controller is configured to control humidity between the substrate and the transfer unit.

This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

Methods and apparatus for forming porous silicon layers are provided. In some embodiments, an anodizing bath includes: a housing having a first volume to hold a chemical solution; a cathode disposed within the first volume at a first side of the housing; an anode disposed within the first volume at a second side of the housing, opposite the first side, wherein a face of each of the cathode and the anode have a given surface area; a substrate holder configured to retain a plurality of substrates along a perimeter thereof within the first volume in a plurality of substrate holding positions, a plurality of vent openings fluidly coupled to the first volume to release process gases, wherein a top of each of the plurality of vent openings are disposed above a chemical solution fill level in the first volume.

Methods and apparatus for forming porous silicon layers are provided. In some embodiments, an anodizing bath includes: a housing having a first volume to hold a chemical solution; a cathode disposed within the first volume at a first side of the housing; an anode disposed within the first volume at a second side of the housing, opposite the first side, wherein a face of each of the cathode and the anode have a given surface area; a substrate holder configured to retain a plurality of substrates along a perimeter thereof within the first volume in a plurality of substrate holding positions, a plurality of vent openings fluidly coupled to the first volume to release process gases, wherein a top of each of the plurality of vent openings are disposed above a chemical solution fill level in the first volume.

An anodic-oxidation equipment for forming a porous layer on a substrate to be treated, including: an electrolytic bath filled with an electrolytic solution; an anode and a cathode disposed in the electrolytic solution; and a power supply for applying current between the anode and the cathode in the electrolytic solution, wherein the anode is the substrate to be treated, and the cathode is a silicon substrate having a surface on which a nitride film is formed. This provides a cathode material in anodic-oxidation for forming porous silicon by an electrochemical reaction in an HF solution, the cathode material having a resistance to electrochemical reaction in an HF solution and no metallic contamination, etc., and furthermore, being less expensive than a conventional cathode material. Furthermore, high-quality porous silicon is provided at a lower cost than has been conventional.

An anodic-oxidation equipment for forming a porous layer on a substrate to be treated, including: an electrolytic bath filled with an electrolytic solution; an anode and a cathode disposed in the electrolytic solution; and a power supply for applying current between the anode and the cathode in the electrolytic solution, wherein the anode is the substrate to be treated, and the cathode is a silicon substrate having a surface on which a nitride film is formed. This provides a cathode material in anodic-oxidation for forming porous silicon by an electrochemical reaction in an HF solution, the cathode material having a resistance to electrochemical reaction in an HF solution and no metallic contamination, etc., and furthermore, being less expensive than a conventional cathode material. Furthermore, high-quality porous silicon is provided at a lower cost than has been conventional.