Patent classifications
C25D11/32
Covalent chemical surface modification of surfaces with available silicon or nitrogen
The invention provides a method to form and functionalize monolayers on a silicon-rich silicon nitride surface or a silicon surface formed by a nanopore fabrication method known as dielectric breakdown. Thermal, photochemical and radical processing can be used to hydrosilylate nascent silicon and silicon nitride surfaces with various reagents. The conventional need for hydrofluoric acid etching prior to coupling functional groups to the surfaces is thereby completely avoided.
Systems and methods for forming nanowires using anodic oxidation
Structures, devices and methods are provided for forming nanowires on a substrate. A first protruding structure is formed on a substrate. The first protruding structure is placed in an electrolytic solution. Anodic oxidation is performed using the substrate as part of an anode electrode. One or more nanowires are formed in the protruding structure. The nanowires are surrounded by a first dielectric material formed during the anodic oxidation.
Systems and methods for forming nanowires using anodic oxidation
Structures, devices and methods are provided for forming nanowires on a substrate. A first protruding structure is formed on a substrate. The first protruding structure is placed in an electrolytic solution. Anodic oxidation is performed using the substrate as part of an anode electrode. One or more nanowires are formed in the protruding structure. The nanowires are surrounded by a first dielectric material formed during the anodic oxidation.
ELECTROCHEMICAL SYSTEMS AND METHODS FOR FINISHING SiC WAFERS
Methods and systems for the electrochemical finishing of SiC wafers. Embodiments of these methods use an applied electrical bias, an electrolytic oxidant removal solution and light to remove raised surface features and imperfections of an SiC wafer.
MOLYBDENUM TRIOXIDE AND NANO SILICON CHIPS FOR ACETONE DETECTION
The present invention relates to a sensor chip and more particularly to the sensor chip for detection of acetone. In one embodiment, the sensor chip comprising: a first layer having a nano-porous silicon fabricated on a P-type Si <100> substrate, a second layer having molybdenum trioxide (MoO.sub.3) in contact with the first layer and a third layer having chrome gold inter digitated electrodes in contact with the second layer.
MOLYBDENUM TRIOXIDE AND NANO SILICON CHIPS FOR ACETONE DETECTION
The present invention relates to a sensor chip and more particularly to the sensor chip for detection of acetone. In one embodiment, the sensor chip comprising: a first layer having a nano-porous silicon fabricated on a P-type Si <100> substrate, a second layer having molybdenum trioxide (MoO.sub.3) in contact with the first layer and a third layer having chrome gold inter digitated electrodes in contact with the second layer.
SUBSTRATE WITH MATRIX-FREE NANOSTRUCTURED HYDROPHILIC ANALYTE SPOTS FOR USE IN MASS SPECTROMETRY
The present disclosure describes a matrix-free nanostructured substrate for use in mass spectrometry. The substrate may preferably include one or more localized analyte spots for placement of an analyte, where each analyte spot may comprise a nanostructured metal oxide or semiconductor containing nanotubes or nanopores. The substrate may further include unstructured metal, metal oxide, or semiconductor that is not nanotubular or nanoporous in the part of the substrate that surrounds each of the analyte spots. In some embodiments, the nanostructured metal oxide or semiconductor may be chemically or structurally modified, and the analyte spots may additionally or alternatively include secondary nanostructures such as nanorods, nanoparticles, nanocoatings, or nanotubes. This may facilitate energy transfer to the analyte for matrix-free laser desorption/ionization. The analyte spots may preferably be more hydrophilic than the surrounding part of the substrate to ensure concentration of the analyte at the analyte spots.
SUBSTRATE WITH MATRIX-FREE NANOSTRUCTURED HYDROPHILIC ANALYTE SPOTS FOR USE IN MASS SPECTROMETRY
The present disclosure describes a matrix-free nanostructured substrate for use in mass spectrometry. The substrate may preferably include one or more localized analyte spots for placement of an analyte, where each analyte spot may comprise a nanostructured metal oxide or semiconductor containing nanotubes or nanopores. The substrate may further include unstructured metal, metal oxide, or semiconductor that is not nanotubular or nanoporous in the part of the substrate that surrounds each of the analyte spots. In some embodiments, the nanostructured metal oxide or semiconductor may be chemically or structurally modified, and the analyte spots may additionally or alternatively include secondary nanostructures such as nanorods, nanoparticles, nanocoatings, or nanotubes. This may facilitate energy transfer to the analyte for matrix-free laser desorption/ionization. The analyte spots may preferably be more hydrophilic than the surrounding part of the substrate to ensure concentration of the analyte at the analyte spots.
Metal grating structure for X-ray
A metal grating structure for X-ray includes a first silicon part having a plate form or a layer form, and a grating portion, wherein the grating portion includes a plurality of second silicon parts formed on the first silicon part, and a plurality of metal parts interposed between the respective adjacent second silicon parts, each of the plurality of metal parts having a deposition start tip part extending toward an inside of the first silicon part.
Metal grating structure for X-ray
A metal grating structure for X-ray includes a first silicon part having a plate form or a layer form, and a grating portion, wherein the grating portion includes a plurality of second silicon parts formed on the first silicon part, and a plurality of metal parts interposed between the respective adjacent second silicon parts, each of the plurality of metal parts having a deposition start tip part extending toward an inside of the first silicon part.