Techniques including methods and apparatuses for selective measurement and monitoring of halide concentrations in processing solutions for iron triad metals and their alloys are provided. Methods include monitoring of a halide ion, for example, based on a first analytical method such as conductivity with a compensation of the results for a main metal concentration such as a second analytical measurement of concentration of an iron triad metal (e.g., nickel (Ni)). From such measurements, a concentration of certain halide ions can be selectively determined.

A method for performing an electrochemical plating (ECP) process includes contacting a surface of a substrate with a plating solution comprising ions of a metal to be deposited, electroplating the metal on the surface of the substrate, in situ monitoring a plating current flowing through the plating solution between an anode and the substrate immersed in the plating solution as the ECP process continues, and adjusting a composition of the plating solution in response to the plating current being below a critical plating current such that voids formed in a subset of conductive lines having a highest line-end density among a plurality of conductive lines for a metallization layer over the substrate are prevented.

An electrochemical plating (ECP) system is provided. The ECP system includes an ECP cell comprising a plating solution for an ECP process, a sensor configured to in situ measure an interface resistance between a plated metal and an electrolyte in the plating solution as the ECP process continues, a plating solution supply system in fluid communication with the ECP cell and configured to supply the plating solution to the ECP cell, and a control system operably coupled to the ECP cell, the sensor and the plating solution supply system. The control system is configured to compare the interface resistance with a threshold resistance and to adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.

Provided is a technique that allows measuring a film thickness of a substrate in a plating process.

A plating apparatus 1000 includes a plating tank 10, a substrate holder 20, a rotation mechanism 30, a plurality of contact members 50, a coil 60, a current sensor 65, and a film thickness measuring device 70. The plurality of contact members 50 are disposed in a substrate holder and arranged in a circumferential direction of the substrate holder. The plurality of contact members 50 contact an outer peripheral edge of a lower surface of a substrate to supply electricity to the substrate in the plating process. The coil 60 generates a current by an electromagnetic induction due to a magnetic field generated by a current flowing into the contact member, the contact member being rotate together with the substrate holder in the plating process. The current sensor 65 detects the current generated in the coil. The film thickness measuring device 70 measures a film thickness of the substrate based on the current detected by the current sensor in the plating process.

Provided is a technique that allows measuring a film thickness of a substrate in a plating process.

A plating apparatus 1000 includes a plating tank 10, a substrate holder 20, a rotation mechanism 30, a plurality of contact members 50, a coil 60, a current sensor 65, and a film thickness measuring device 70. The plurality of contact members 50 are disposed in a substrate holder and arranged in a circumferential direction of the substrate holder. The plurality of contact members 50 contact an outer peripheral edge of a lower surface of a substrate to supply electricity to the substrate in the plating process. The coil 60 generates a current by an electromagnetic induction due to a magnetic field generated by a current flowing into the contact member, the contact member being rotate together with the substrate holder in the plating process. The current sensor 65 detects the current generated in the coil. The film thickness measuring device 70 measures a film thickness of the substrate based on the current detected by the current sensor in the plating process.

An apparatus and method of adjusting a plating solution are described. Suppressor is added to the plating solution until a comparison to reference data of an RDE potential taken at a first time during a constant current experiment indicates a threshold suppressor concentration is present. The amount of suppressor added to reach the threshold suppressor concentration is used to determine suppressor concentration of the solution. Another amount of suppressor is added to a new plating solution so that the new plating solution has a specific suppressor concentration. The RDE potential or slope of RDE potential change of the new plating concentration with the specific suppressor concentration taken at a second time during another constant current experiment is compared with the reference data to determine the leveler concentration. The suppressor and leveler concentrations of the original plating solution are adjusted before a semiconductor substrate is plated.

An apparatus and method of adjusting a plating solution are described. Suppressor is added to the plating solution until a comparison to reference data of an RDE potential taken at a first time during a constant current experiment indicates a threshold suppressor concentration is present. The amount of suppressor added to reach the threshold suppressor concentration is used to determine suppressor concentration of the solution. Another amount of suppressor is added to a new plating solution so that the new plating solution has a specific suppressor concentration. The RDE potential or slope of RDE potential change of the new plating concentration with the specific suppressor concentration taken at a second time during another constant current experiment is compared with the reference data to determine the leveler concentration. The suppressor and leveler concentrations of the original plating solution are adjusted before a semiconductor substrate is plated.

Provided is a film formation device and a film formation method for a metallic coating that allow forming a metallic coating with a uniform film thickness. The film formation device of the present disclosure includes an anode, a solid electrolyte membrane, a power supply device, a solution container, and a pressure device. The solid electrolyte membrane is disposed between the anode and a substrate that serves as a cathode. The power supply device applies a voltage between the anode and the cathode. The solution container contains a solution between the anode and the solid electrolyte membrane. The solution contains metal ions. The pressure device pressurizes the solid electrolyte membrane to the cathode side with a fluid pressure of the solution. The film formation device further includes a shielding member disposed to surround an outer peripheral surface of the anode. The shielding member shields a line of electric force.

Provided is a film formation device and a film formation method for a metallic coating that allow forming a metallic coating with a uniform film thickness. The film formation device of the present disclosure includes an anode, a solid electrolyte membrane, a power supply device, a solution container, and a pressure device. The solid electrolyte membrane is disposed between the anode and a substrate that serves as a cathode. The power supply device applies a voltage between the anode and the cathode. The solution container contains a solution between the anode and the solid electrolyte membrane. The solution contains metal ions. The pressure device pressurizes the solid electrolyte membrane to the cathode side with a fluid pressure of the solution. The film formation device further includes a shielding member disposed to surround an outer peripheral surface of the anode. The shielding member shields a line of electric force.

A double layered electrolytic copper foil is disclosed. It is possible to freely control various physical properties of the double layered electrolytic copper foil. The double layered electrolytic copper foil contains a first copper layer, a second copper layer, and an interface formed between one surface of the first copper layer and one surface of the second copper layer. A method of manufacturing the double layered electrolytic copper foil is also disclosed.