A method for smoothing surfaces of a copper foil and the copper foil obtained are provided, wherein the method for smoothing surfaces of the copper foil includes the following steps. Supplied with a copper foil. A first electropolishing process is performed on the copper foil. The copper foil is subjected to a pickling process. A second electropolishing process is performed on the copper foil.

A method for smoothing surfaces of a copper foil and the copper foil obtained are provided, wherein the method for smoothing surfaces of the copper foil includes the following steps. Supplied with a copper foil. A first electropolishing process is performed on the copper foil. The copper foil is subjected to a pickling process. A second electropolishing process is performed on the copper foil.

The present disclosure provides a local carbon-supply device and a method for preparing a wafer-level graphene single crystal by local carbon supply. The method includes: providing the local carbon-supply device; preparing a nickel-copper alloy substrate, placing the nickel-copper alloy substrate in the local carbon-supply device; placing the local carbon-supply device provided with the nickel-copper alloy substrate in a chamber of a chemical vapor-phase deposition system, and introducing a gaseous carbon source into the local carbon-supply device to grow the graphene single crystal on the nickel-copper alloy substrate. A graphene prepared by embodiments of the present disclosure has the advantages of good crystallinity of a crystal domain, simple preparation condition, low cost, a wider window of condition parameters required for growth, and good repeatability, which lays a foundation for wide application of the wafer-level graphene single crystal in a graphene apparatus and other fields.

The present disclosure provides a local carbon-supply device and a method for preparing a wafer-level graphene single crystal by local carbon supply. The method includes: providing the local carbon-supply device; preparing a nickel-copper alloy substrate, placing the nickel-copper alloy substrate in the local carbon-supply device; placing the local carbon-supply device provided with the nickel-copper alloy substrate in a chamber of a chemical vapor-phase deposition system, and introducing a gaseous carbon source into the local carbon-supply device to grow the graphene single crystal on the nickel-copper alloy substrate. A graphene prepared by embodiments of the present disclosure has the advantages of good crystallinity of a crystal domain, simple preparation condition, low cost, a wider window of condition parameters required for growth, and good repeatability, which lays a foundation for wide application of the wafer-level graphene single crystal in a graphene apparatus and other fields.

MP35N (35% Co, 35% Ni, 20% Cr, 10% Mo, by weight) wires (solid and clad) are widely used for leads in cardiac rhythm management (CRM) and neurological electrical stimulation devices. Over the typical lifetime of a CRM device, a lead wire is subjected to stress cycling imposed by the heartbeat and is expected to survive 300 million stress cycles, or more. Premature fatigue fracture of a lead is sometimes caused by surface imperfections in the wire that has been coiled into the lead. The imperfections can result in concentration of stresses at a specific location on the wire surface. A vexing type of imperfection is a tiny surface fissure that is commonly referred to as a chevron. Wire drawing processes that are commonly used to form wires for manufacturing an implantable lead inherently produce a distribution of tiny chevrons on the wire surface. According to the present invention, removing chevrons and other surface imperfections using an electropolishing process helps reduce or eliminate premature fatigue failure initiated by such surface imperfection.

A process for electrochemical mass removal and/or electropolishing a stent formed from a cobalt-chromium-tungsten-platinum alloy. The alloy may also comprise nickel (e.g., at about 10% by weight), where no other elements are present in an amount over 3% by weight. The process includes positioning the stent in an electrolyte solution in an electropolishing cell, wherein the electrolyte includes each of H.sub.2SO.sub.4, HCl, and H.sub.3PO.sub.4, e.g., in a volumetric ratio (as prepared) of about 6:1:1, wherein the electrolyte further comprises ethylene glycol. The metallic body is electrochemically processed in the electrolyte solution in the electropolishing cell, wherein the mass removal and electropolishing includes application of an alternating current with a forward:reverse current ratio of at least 3:1 (e.g., from 3:1 to 5:1). Voltage may be allowed to float, e.g., within a range of 1 to 6 volts. Superficially similar processes using DC, other AC settings, or without ethylene glycol were ineffective.

A process for electrochemical mass removal and/or electropolishing a stent formed from a cobalt-chromium-tungsten-platinum alloy. The alloy may also comprise nickel (e.g., at about 10% by weight), where no other elements are present in an amount over 3% by weight. The process includes positioning the stent in an electrolyte solution in an electropolishing cell, wherein the electrolyte includes each of H.sub.2SO.sub.4, HCl, and H.sub.3PO.sub.4, e.g., in a volumetric ratio (as prepared) of about 6:1:1, wherein the electrolyte further comprises ethylene glycol. The metallic body is electrochemically processed in the electrolyte solution in the electropolishing cell, wherein the mass removal and electropolishing includes application of an alternating current with a forward:reverse current ratio of at least 3:1 (e.g., from 3:1 to 5:1). Voltage may be allowed to float, e.g., within a range of 1 to 6 volts. Superficially similar processes using DC, other AC settings, or without ethylene glycol were ineffective.

In a method for controlling energy damping in a shape memory alloy, provided is a shape memory alloy having a composition including at least one of: Cu in at least about 10 wt. %, Fe in at least about 5 wt. %, Au in at least about 5 wt. %, Ag in at least about 5 wt. %, Al in at least about 5 wt. %, In in at least about 5 wt. %, Mn in at least about 5 wt. %, Zn in at least about 5 wt. % and Co in at least about 5 wt. %. The shape memory alloy is configured into a structure including a structural feature having a surface roughness and having a feature extent that is greater than about 1 micron and less than about 1 millimeter. Energy damping of the structural feature is modified by exposing the structural feature to process conditions that alter the surface roughness of the structural feature.

In a method for controlling energy damping in a shape memory alloy, provided is a shape memory alloy having a composition including at least one of: Cu in at least about 10 wt. %, Fe in at least about 5 wt. %, Au in at least about 5 wt. %, Ag in at least about 5 wt. %, Al in at least about 5 wt. %, In in at least about 5 wt. %, Mn in at least about 5 wt. %, Zn in at least about 5 wt. % and Co in at least about 5 wt. %. The shape memory alloy is configured into a structure including a structural feature having a surface roughness and having a feature extent that is greater than about 1 micron and less than about 1 millimeter. Energy damping of the structural feature is modified by exposing the structural feature to process conditions that alter the surface roughness of the structural feature.

A bone implant for at least partial insertion into a bone and/or cartilage. The bone implant is at least partially formed of a metal alloy of at least about 90 wt % of a solid solution or a rhenium and molybdenum alloy.