A polishing device for an indium phosphide substrate and a polishing process are provided, which belong to the technical field of polishing of indium phosphide. The polishing device includes an electrolyzer, and further includes an anode disc supporting rod positioned at a center position of a bottom of the electrolyzer by virtue of an anode lifting mechanism; an anode disc hinged to an upper end of the anode disc supporting rod; a cathode disc supporting rod positioned above the anode disc by virtue of a cathode lifting mechanism; a cathode disc arranged at a lower end of the cathode disc supporting rod; a graphite electrode plate arranged on the anode disc by virtue of a connection mechanism; a group of planet gears arranged on an upper end surface of the graphite electrode plate by virtue of an intermediate driving mechanism; an anode rotation driving mechanism connected to the intermediate driving mechanism; a cathode rotation driving mechanism connected to the cathode disc supporting rod; and a polishing direct current (DC) power supply respectively connected to contacts of the anode disc supporting rod and the cathode disc supporting rod by virtue of wires. By improving the structure of the device and the manufacturing process, a requirement for the environment in the polishing process of indium phosphide is greatly reduced, and electrochemical and mechanical dual-polishing is achieved.

A polishing device for an indium phosphide substrate and a polishing process are provided, which belong to the technical field of polishing of indium phosphide. The polishing device includes an electrolyzer, and further includes an anode disc supporting rod positioned at a center position of a bottom of the electrolyzer by virtue of an anode lifting mechanism; an anode disc hinged to an upper end of the anode disc supporting rod; a cathode disc supporting rod positioned above the anode disc by virtue of a cathode lifting mechanism; a cathode disc arranged at a lower end of the cathode disc supporting rod; a graphite electrode plate arranged on the anode disc by virtue of a connection mechanism; a group of planet gears arranged on an upper end surface of the graphite electrode plate by virtue of an intermediate driving mechanism; an anode rotation driving mechanism connected to the intermediate driving mechanism; a cathode rotation driving mechanism connected to the cathode disc supporting rod; and a polishing direct current (DC) power supply respectively connected to contacts of the anode disc supporting rod and the cathode disc supporting rod by virtue of wires. By improving the structure of the device and the manufacturing process, a requirement for the environment in the polishing process of indium phosphide is greatly reduced, and electrochemical and mechanical dual-polishing is achieved.

An apparatus and a method for plating and/or polishing wafer includes a wafer chuck, an auxiliary nozzle apparatus and a main nozzle apparatus. The wafer chuck holds and positions the wafer, moves horizontally, and rotates. The auxiliary nozzle apparatus supplies uncharged or charged electrolyte to cover the outer edge of the wafer and the wafer chuck, and the main nozzle apparatus supplies charged electrolyte to the surface of the wafer, to improve the plating and/or polishing uniformity of the outer edge of the wafer, reduce the entire electric resistance of the apparatus, and improve the plating and/or polishing rate.

An apparatus and a method for plating and/or polishing wafer includes a wafer chuck, an auxiliary nozzle apparatus and a main nozzle apparatus. The wafer chuck holds and positions the wafer, moves horizontally, and rotates. The auxiliary nozzle apparatus supplies uncharged or charged electrolyte to cover the outer edge of the wafer and the wafer chuck, and the main nozzle apparatus supplies charged electrolyte to the surface of the wafer, to improve the plating and/or polishing uniformity of the outer edge of the wafer, reduce the entire electric resistance of the apparatus, and improve the plating and/or polishing rate.

An exemplary distribution system, apparatus and method can be provide for chemical and/or electrolytic surface treatment of a substrate in a process fluid. The distribution system can comprise a distribution body and a control unit. The distribution body can be configured to direct a flow of the process fluid and/or an electrical current to the substrate. The distribution body can comprise at least a first distribution element and a second distribution element. The control unit/device can be configured to control the first distribution element and the second distribution element separately from one another.

An exemplary distribution system, apparatus and method can be provide for chemical and/or electrolytic surface treatment of a substrate in a process fluid. The distribution system can comprise a distribution body and a control unit. The distribution body can be configured to direct a flow of the process fluid and/or an electrical current to the substrate. The distribution body can comprise at least a first distribution element and a second distribution element. The control unit/device can be configured to control the first distribution element and the second distribution element separately from one another.

Exemplary substrate electrochemical planarization apparatuses may include a chuck body defining a substrate support surface. The apparatuses may include a retaining wall extending from the chuck body. The apparatuses may include an electrolyte delivery port disposed radially inward of the retaining wall. The apparatuses may include a spindle that is positionable over the chuck body. The apparatuses may include an end effector coupled with a lower end of the spindle. The end effector may be conductive. The apparatuses may include an electric contact extending from the chuck body or retaining wall. The apparatuses may include a current source. The current source may be configured to provide an electric current to an electrolyte within an open interior defined by the retaining wall.

A method and apparatus for pulse electrochemical polishing a wafer are disclosed. The method comprises steps of: establishing a duty cycle table showing all points on the wafer, a removal thickness corresponding to every point and a duty cycle corresponding to the removal thickness; driving a wafer chuck holding and positioning the wafer to move at a preset speed so that a special point on the wafer is right above a nozzle ejecting charged electrolyte onto the wafer; looking up the duty cycle table and obtaining the removal thickness and the duty cycle corresponding to the special point; and applying a preset pulse power source to the wafer and the nozzle and the actual polishing power source for polishing the special point being equal to the duty cycle multiplying by the preset power source.

A method and apparatus for pulse electrochemical polishing a wafer are disclosed. The method comprises steps of: establishing a duty cycle table showing all points on the wafer, a removal thickness corresponding to every point and a duty cycle corresponding to the removal thickness; driving a wafer chuck holding and positioning the wafer to move at a preset speed so that a special point on the wafer is right above a nozzle ejecting charged electrolyte onto the wafer; looking up the duty cycle table and obtaining the removal thickness and the duty cycle corresponding to the special point; and applying a preset pulse power source to the wafer and the nozzle and the actual polishing power source for polishing the special point being equal to the duty cycle multiplying by the preset power source.

The invention discloses an electrochemical polishing solution, a process for electrochemically polishing a graphite gate electrode and a graphite gate electrode, which are used for providing an electrochemical polishing solution and a polishing process to efficiently remove the contaminant on the surface of a gate electrode and improve the quality of the gate electrode. Said electrochemical polishing solution comprises 900-1000 parts by weight of water; 195-205 parts by weight of an alkaline metal hydroxide; 49-51 parts by weight of a weak acid salt; and 294-306 parts by weight of an additive.