Provided are a dielectric material, a device including the dielectric material, and a method of preparing the dielectric material, in which the dielectric material may include: a layered perovskite compound, wherein the layered perovskite compound may include at least one selected from a Dion-Jacobson phase, an Aurivillius phase, and a Ruddlesden-Popper phase, a temperature coefficient of capacitance (TCC) of a capacitance at 200° C. with respect to a capacitance at 40° C. may be in a range of about −15 percent (%) to about 15%, and a permittivity of the dielectric material may be 200 or greater in a range of about 1 kilohertz (kHz) to about 1 megahertz (MHz).

Forming a two-dimensional Janus layer includes forming a layer of MX.sub.2, where M is a transition metal and X is a first chalcogen, plasma etching the layer of MX.sub.2 to remove X from the top layer, thereby yielding an etched layer, and contacting the etched layer with a second chalcogen Y. The second chalcogen is different than the first chalcogen, resulting in a two-dimensional Janus layer including MXY.

This disclosure relates to methods of growing crystalline layers on amorphous substrates by way of an ultra-thin seed layer, methods for preparing the seed layer, and compositions comprising both. In an aspect of the invention, the crystalline layers can be thin films. In a preferred embodiment, these thin films can be free-standing.

A method for crystallizing an amorphous multicomponent ionic compound comprises applying an external stimulus to a layer of an amorphous multicomponent ionic compound, the layer in contact with an amorphous surface of a deposition substrate at a first interface and optionally, the layer in contact with a crystalline surface at a second interface, wherein the external stimulus induces an amorphous-to-crystalline phase transformation, thereby crystallizing the layer to provide a crystalline multicomponent ionic compound, wherein the external stimulus and the crystallization are carried out at a temperature below the melting temperature of the amorphous multicomponent ionic compound. If the layer is in contact with the crystalline surface at the second interface, the temperature is further selected to achieve crystallization from the crystalline surface via solid phase epitaxial (SPE) growth without nucleation.

A laser irradiation apparatus includes: a laser generation apparatus configured to generate first laser light for performing heat treatment of an object to be processed; a measurement-laser emission unit configured to emit linearly-polarized second laser light toward an irradiation area on the object to be processed to which the first laser light is applied; a first polarizing plate configured to let, of the whole reflected light of the second laser light reflected by the object to be processed, a part of the reflected light that has a first polarization direction pass therethrough; and a measurement-laser detection unit configured to detect the reflected light that has passed through the first polarizing plate.

A MOD YIG epitaxial process for fabricating YIG nanofilms which, when deposited on GGG substrates, have single crystal epitaxial properties. The films may have thicknesses of 50 nm for a single layer, 100 nm for two layers, and 130 nm for three layers, and have a gyromagnetic ratio of 2.80 MHz per Oe, Gilbert damping ranges from 0.0003 to 0.001, 4M$ values between 1650 G to 1780 G, coercivity from 1 Oe. to 5 Oe, and surface roughness of RMS 0.20 nm for up to 10 layers. Fabrication is economical and uses only a spinner, a drying station (RT to 150 C temperature control), and a quartz tube furnace that accommodates a flowing atmosphere of research grade oxygen, thereby eliminating the need for high vacuum deposition chambers.

A method of performing regional heating of a substrate by electromagnetic induction heating. The method may include applying a semiconductor film to the substrate and controllably energizing a coil positioned near the substrate. The energized coil(s) thereby generates a magnetic flux, which induces a current in the substrate and/or the semiconductor film, thereby heating the substrate and/or semiconductor film. The method may also include relative motion between the coil and the substrate to provide translation heating of the semiconductor film. Additionally, a crystal seeding mechanism may be employed to further control the crystallization process.

The invention relates to a method for producing thin layers of silicon carbide by means of a solution or dispersion containing carbon and silicon.

A method is described for the atmospheric pressure sintering of silicon to form high density polycrystalline silicon preforms that optionally may be annealed at higher temperatures to form wafers suitable for use in solar cells. The preforms are formed from nanometer scale, high surface area silicon that is sintered to form the near full density polycrystalline silicon preforms. Subsequent annealing of the preforms may be used to grow grains suitable for use as wafers for solar cells. The polycrystalline silicon may be used directly to form semiconductor structures other than wafers suitable for solar cells, such as to form electrodes, electrode surfaces, and thermoelectric devices.

The present disclosure provides methods for forming diamond nanostructures and diamonds from amorphous carbon nanostructures in ambient temperature and pressure by irradiating carbon nanostructures to an undercooled state and quenching the melted carbon to convert a portion of the nanostructure into diamond.