A compound includes indium element (In), gallium element (Ga), aluminum element (Al) and oxygen element (O), the compound having a triclinic crystal system with lattice constants being a=10.07±0.15 Å, b=10.45±0.15 Å, c=11.01±0.15 Å, α=111.70±0.50°, β=107.70±0.50° and γ=90.00±0.50°.

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

Transition metal composite hydroxide particles as a precursor to a cathode active material for use in a non-aqueous electrolyte rechargeable battery, where the transition metal composite hydroxide has secondary particles formed by an aggregation of plate-shaped primary particles and fine primary particles, are described. The secondary particles have a center section formed by the plate-shaped primary particles, a layered structure with a low-density section formed by the fine primary particles, and a high-density section formed by the plate-shaped primary particles on the outside of the center section. The average value of the ratio of the center section outer diameter to the particle size of the secondary particles is 30% to 80%, and the average value of the ratio of the high-density section radial direction thickness to the particle size of the secondary particles is 5% to 25%.

Transition metal composite hydroxide particles as a precursor to a cathode active material for use in a non-aqueous electrolyte rechargeable battery, where the transition metal composite hydroxide has secondary particles formed by an aggregation of plate-shaped primary particles and fine primary particles, are described. The secondary particles have a center section formed by the plate-shaped primary particles, a layered structure with a low-density section formed by the fine primary particles, and a high-density section formed by the plate-shaped primary particles on the outside of the center section. The average value of the ratio of the center section outer diameter to the particle size of the secondary particles is 30% to 80%, and the average value of the ratio of the high-density section radial direction thickness to the particle size of the secondary particles is 5% to 25%.

Proposed are a layered Group III-V antimony compound, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound having a composition represented by [Formula 1] M.sub.x−mA.sub.ySb.sub.z (Where M is at least one of Group I elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x).

A structure includes a semiconductor substrate, and a polycrystalline resistor region over the semiconductor substrate. The polycrystalline resistor region includes a semiconductor material in a polycrystalline morphology. A dopant-including polycrystalline region is between the polycrystalline resistor region and the semiconductor substrate.

A compound includes indium element (In), gallium element (Ga), aluminum element (Al) and oxygen element (O), the compound having a triclinic crystal system with lattice constants being a=10.07±0.15 Å, b=10.45±0.15 Å, c=11.01±0.15 Å, α=111.70±0.50°, β=107.70±0.50° and γ=90.00±0.50°.

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.